Standout Papers

Physical mechanisms of transient enhanced dopant diffusion in io... 1984 2026 1998 2012 466
  1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon (1997)
    P.A. Stolk, H.‐J. Gossmann et al. Journal of Applied Physics
  2. Equilibrium shape of Si (1993)
    D. J. Eaglesham, Alice E. White et al. Physical Review Letters
  3. Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation (1984)
    Michael O. Thompson, G. J. Galvin et al. Physical Review Letters

Immediate Impact

5 by Nobel laureates 38 from Science/Nature 59 standout
Sub-graph 1 of 21

Citing Papers

A photonic integrated circuit–based erbium-doped amplifier
2022 StandoutScience
Van der Waals integration before and beyond two-dimensional materials
2019 StandoutNature
1 intermediate paper

Works of D. C. Jacobson being referenced

Optical doping of waveguide materials by MeV Er implantation
1991
Growth of single-crystal CoSi2 on Si(111)
1982

Author Peers

Author Last Decade Papers Cites
D. C. Jacobson 6472 2529 3148 4194 211 8.9k
J. W. Corbett 8424 2019 4174 4073 206 10.6k
C. W. White 2789 2021 1368 3581 236 6.3k
D. J. Eaglesham 7033 1752 4557 3501 161 9.3k
E. Rimini 3656 1891 1305 2817 338 5.6k
T. Dı́az de la Rubia 2713 3175 1187 7057 182 9.8k
S. T. Picraux 4403 1014 2006 2726 164 6.7k
M‐A. Nicolet 2778 1589 1925 1907 179 4.9k
R. Hull 4842 697 4016 2763 278 8.2k
Eric Chason 4940 2550 1942 3748 197 8.9k
R. G. Elliman 4389 1725 1103 3038 336 6.0k

All Works

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2026