Standout Papers

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm 2000 2026 2008 2017 965
  1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm (2000)
    Chenming Hu, Jeffrey Bokor et al. IEEE Transactions on Electron Devices

Immediate Impact

4 by Nobel laureates 22 from Science/Nature 61 standout
Sub-graph 1 of 25

Citing Papers

Interfacial bonding enhances thermoelectric cooling in 3D-printed materials
2025 StandoutScience
The future of two-dimensional semiconductors beyond Moore’s law
2024 Standout
2 intermediate papers

Works of C. Kuo being referenced

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
2000 Standout

Author Peers

Author Last Decade Papers Cites
C. Kuo 964 7 187 106 3 1.0k
K. Asano 1238 5 255 134 8 1.3k
T.Y. Chan 1288 19 90 78 26 1.3k
Tsu-Jae King 1193 7 230 213 20 1.3k
S.S. Mohan 986 19 2 349 17 4 1.1k
K. Rim 763 4 250 314 14 932
M. del Mar Hershenson 1041 20 2 366 17 7 1.1k
F.P. Heiman 825 5 74 145 15 858
T. Ghani 934 12 226 379 11 1.1k
Donald A. Neamen 732 15 1 196 408 10 998
Stanley M. Wolf 724 7 238 234 5 942

All Works

Loading papers...

Rankless by CCL
2026