Standout Papers

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer 1993 2026 2004 2015 229
  1. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer (1993)
    Anri Watanabe, Tetsuya Takeuchi et al. Journal of Crystal Growth

Immediate Impact

15 by Nobel laureates 4 from Science/Nature 36 standout
Sub-graph 1 of 18

Citing Papers

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives
2024 Standout
Stability, Reliability, and Robustness of GaN Power Devices: A Review
2023 Standout
3 intermediate papers

Works of Anri Watanabe being referenced

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate
2015
Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si
2015
and 1 more

Author Peers

Author Last Decade Papers Cites
Anri Watanabe 163 278 140 11 336
Anthony Garcia 100 217 87 18 385
Longquan Xu 114 312 110 12 373
Yuma Todoroki 100 318 193 17 347
Kenneth E. Morgan 98 323 138 14 394
M. E. Aumer 123 310 157 19 400
J. W. Lee 252 129 51 18 313
T. P. Chow 283 210 152 15 377
Jeffrey Mileham 204 223 62 15 331
V. V. Kaminski 115 232 92 11 310
J. Krueger 154 222 130 15 337

All Works

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Rankless by CCL
2026