Yoshiharu Enta

1.8k total citations
79 papers, 1.5k citations indexed

About

Yoshiharu Enta is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, Yoshiharu Enta has authored 79 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Materials Chemistry, 39 papers in Electrical and Electronic Engineering and 33 papers in Surfaces, Coatings and Films. Recurrent topics in Yoshiharu Enta's work include Electron and X-Ray Spectroscopy Techniques (33 papers), Semiconductor materials and devices (29 papers) and Diamond and Carbon-based Materials Research (21 papers). Yoshiharu Enta is often cited by papers focused on Electron and X-Ray Spectroscopy Techniques (33 papers), Semiconductor materials and devices (29 papers) and Diamond and Carbon-based Materials Research (21 papers). Yoshiharu Enta collaborates with scholars based in Japan, United States and Germany. Yoshiharu Enta's co-authors include T. Kinoshita, S. Kono, Maki Suemitsu, S. Kono, Shigeru Suzuki, Satoru Suzuki, T. Sakamoto, Shigeru Suzuki, S. Suzuki and Shozo Kono and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Yoshiharu Enta

76 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yoshiharu Enta Japan 22 834 655 624 507 179 79 1.5k
A. Armigliato Italy 23 737 0.9× 1.2k 1.9× 538 0.9× 188 0.4× 119 0.7× 129 1.7k
A. Flodström Sweden 17 507 0.6× 336 0.5× 442 0.7× 271 0.5× 81 0.5× 52 1.0k
A. di Bona Italy 23 594 0.7× 391 0.6× 669 1.1× 245 0.5× 54 0.3× 86 1.3k
S. D. Berger United States 16 201 0.2× 632 1.0× 662 1.1× 391 0.8× 248 1.4× 34 1.3k
M. L. Shek United States 18 475 0.6× 384 0.6× 576 0.9× 223 0.4× 136 0.8× 53 1.0k
L. Calliari Italy 19 214 0.3× 421 0.6× 672 1.1× 178 0.4× 240 1.3× 73 982
F. C. Unterwald United States 22 939 1.1× 917 1.4× 475 0.8× 149 0.3× 83 0.5× 38 1.5k
J. L. Sacedón Spain 18 455 0.5× 387 0.6× 346 0.6× 211 0.4× 77 0.4× 80 910
M. Kamaratos Greece 19 383 0.5× 489 0.7× 471 0.8× 182 0.4× 38 0.2× 75 895
C. Capasso United States 22 457 0.5× 679 1.0× 265 0.4× 254 0.5× 71 0.4× 78 1.1k

Countries citing papers authored by Yoshiharu Enta

Since Specialization
Citations

This map shows the geographic impact of Yoshiharu Enta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshiharu Enta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshiharu Enta more than expected).

Fields of papers citing papers by Yoshiharu Enta

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshiharu Enta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshiharu Enta. The network helps show where Yoshiharu Enta may publish in the future.

Co-authorship network of co-authors of Yoshiharu Enta

This figure shows the co-authorship network connecting the top 25 collaborators of Yoshiharu Enta. A scholar is included among the top collaborators of Yoshiharu Enta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yoshiharu Enta. Yoshiharu Enta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Enta, Yoshiharu, et al.. (2019). Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon. Japanese Journal of Applied Physics. 58(SI). SIIA16–SIIA16. 2 indexed citations
3.
Nakamura, Kazuki, Yasuyuki Kobayashi, Yoshiharu Enta, et al.. (2019). Annealing effects on the properties of nitrogen doped DLC films. IEICE Technical Report; IEICE Tech. Rep.. 119(271). 9–14. 1 indexed citations
4.
5.
Nakazawa, Hideki, et al.. (2016). Tribological properties and thermal stability of hydrogenated, silicon/nitrogen-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition. Japanese Journal of Applied Physics. 55(12). 125501–125501. 11 indexed citations
6.
Enta, Yoshiharu, et al.. (2016). Activation energy of thermal desorption of silicon oxide layers on silicon substrates. Surface Science. 656. 96–100. 5 indexed citations
7.
Nakazawa, Hideki, et al.. (2011). Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition. Japanese Journal of Applied Physics. 51(1R). 15603–15603. 10 indexed citations
8.
Enta, Yoshiharu, H. Nakazawa, Shūichi Satō, Hidemi Kato, & Y. Sakisaka. (2010). Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission. Journal of Physics Conference Series. 235. 12008–12008. 6 indexed citations
9.
Nakazawa, Hideki, et al.. (2003). Structure and Thermal Stability of the Chemical Bondings of Diamond-Like Carbon (DLC) Films Prepared by RF Magnetron Sputtering. Hyomen Kagaku. 24(7). 411–416. 3 indexed citations
10.
Enta, Yoshiharu, Masanori Shinohara, Maki Suemitsu, et al.. (1999). Si 2p Spectra of Initial Thermal Oxides on Si(100) Oxidized by H2O. Japanese Journal of Applied Physics. 38(S1). 253–253. 5 indexed citations
11.
Enta, Yoshiharu, et al.. (1998). Real-time measurements of Si2pcore level during dry oxidation of Si(100). Physical review. B, Condensed matter. 57(11). 6294–6296. 29 indexed citations
12.
Enta, Yoshiharu, et al.. (1998). Growth Mode and Characteristics of the O2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement. Japanese Journal of Applied Physics. 37(1R). 261–261. 13 indexed citations
13.
Takakuwa, Yuji, Tetsuji Yamaguchi, Yoshiharu Enta, et al.. (1998). In situ observation of thermal and photon-induced reactions on Si surfaces by ultraviolet photoelectron spectroscopy. Journal of Electron Spectroscopy and Related Phenomena. 88-91. 747–755. 5 indexed citations
14.
Enta, Yoshiharu, et al.. (1996). Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy. Applied Surface Science. 100-101. 449–453. 36 indexed citations
15.
Enta, Yoshiharu, Nobuo Miyamoto, Yuji Takakuwa, & Hiroo Kato. (1994). Photoelectron intensity oscillation as a probe to monitor Si layer-by-layer growth. Applied Surface Science. 82-83. 327–331. 3 indexed citations
16.
Enta, Yoshiharu, Satoru Suzuki, & S. Kono. (1990). Angle-resolved-photoemission study of the electronic structure of the Si(001)c(4×2) surface. Physical Review Letters. 65(21). 2704–2707. 95 indexed citations
17.
Abukawa, T., et al.. (1990). Photoemission study of the negative electron affinity surfaces of O/Cs/Si(001)2×1 and O/K/Si(001)2×1. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 8(4). 3205–3209. 25 indexed citations
18.
Abukawa, T., et al.. (1988). Low Energy Electron Diffraction and X-Ray Photoelectron Spectroscopy Studies of the Formation of Submonolayer Interfaces of Sb/Si(111). Japanese Journal of Applied Physics. 27(1R). 147–147. 84 indexed citations
19.
Kinoshita, T., et al.. (1987). Empty- and filled-electronic states of the Si(111)√3×√3-Sn, √3×√3-In and 2√3×2√3-Sn surfaces. Journal of the Physical Society of Japan. 56(11). 4015–4021. 16 indexed citations
20.
Kono, S., K. Higashiyama, T. Kinoshita, et al.. (1987). Surface and bulk core-level shifts of the Si(111)√3 √3-Ag surface: Evidence for a charged√3 √3layer. Physical Review Letters. 58(15). 1555–1558. 82 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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