Ya‐Ping Hsieh

3.8k total citations · 1 hit paper
119 papers, 3.0k citations indexed

About

Ya‐Ping Hsieh is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, Ya‐Ping Hsieh has authored 119 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 86 papers in Materials Chemistry, 60 papers in Electrical and Electronic Engineering and 42 papers in Biomedical Engineering. Recurrent topics in Ya‐Ping Hsieh's work include Graphene research and applications (47 papers), 2D Materials and Applications (31 papers) and Advancements in Battery Materials (13 papers). Ya‐Ping Hsieh is often cited by papers focused on Graphene research and applications (47 papers), 2D Materials and Applications (31 papers) and Advancements in Battery Materials (13 papers). Ya‐Ping Hsieh collaborates with scholars based in Taiwan, United States and Czechia. Ya‐Ping Hsieh's co-authors include Mario Hofmann, Jing Kong, M. S. Dresselhaus, Yang‐Fang Chen, Hyungbin Son, Xiaoting Jia, Vincent Meunier, Jessica Campos‐Delgado, Humberto Terrones and Bobby G. Sumpter and has published in prestigious journals such as Science, Advanced Materials and Nature Communications.

In The Last Decade

Ya‐Ping Hsieh

117 papers receiving 2.9k citations

Hit Papers

Controlled Formation of Sharp Zigzag and Armchair Edges i... 2009 2026 2014 2020 2009 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ya‐Ping Hsieh Taiwan 30 1.9k 1.2k 679 386 370 119 3.0k
Handong Li China 28 1.9k 1.0× 1.1k 1.0× 663 1.0× 519 1.3× 337 0.9× 87 3.1k
Zhongqing Wei China 19 2.1k 1.1× 1.5k 1.2× 1.3k 1.9× 346 0.9× 448 1.2× 54 3.4k
Zhiting Li China 16 1.5k 0.8× 842 0.7× 812 1.2× 217 0.6× 234 0.6× 42 2.5k
Cheng‐Lung Chen Taiwan 29 1.7k 0.9× 1.1k 1.0× 430 0.6× 197 0.5× 323 0.9× 122 3.1k
Pengpeng Zhang China 29 2.5k 1.3× 1.0k 0.9× 532 0.8× 294 0.8× 326 0.9× 154 3.6k
Miao Feng China 28 1.4k 0.7× 687 0.6× 1.0k 1.5× 248 0.6× 505 1.4× 90 2.6k
Wenxin Wang China 32 2.4k 1.3× 1.4k 1.2× 866 1.3× 605 1.6× 569 1.5× 199 3.8k
Changlong Liu China 33 1.8k 0.9× 1.1k 1.0× 1.1k 1.7× 350 0.9× 462 1.2× 186 3.4k
Pascal Puech France 32 2.5k 1.3× 1.3k 1.1× 715 1.1× 506 1.3× 311 0.8× 168 3.7k

Countries citing papers authored by Ya‐Ping Hsieh

Since Specialization
Citations

This map shows the geographic impact of Ya‐Ping Hsieh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ya‐Ping Hsieh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ya‐Ping Hsieh more than expected).

Fields of papers citing papers by Ya‐Ping Hsieh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ya‐Ping Hsieh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ya‐Ping Hsieh. The network helps show where Ya‐Ping Hsieh may publish in the future.

Co-authorship network of co-authors of Ya‐Ping Hsieh

This figure shows the co-authorship network connecting the top 25 collaborators of Ya‐Ping Hsieh. A scholar is included among the top collaborators of Ya‐Ping Hsieh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ya‐Ping Hsieh. Ya‐Ping Hsieh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Raman, R., et al.. (2024). Transferrable Alumina Membranes as High‐Performance Dielectric for Flexible 2D Materials Devices. Advanced Electronic Materials. 10(6). 1 indexed citations
3.
Lu, Yu‐Jung, Drake Austin, Nicholas R. Glavin, et al.. (2024). The Importance of Catalytic Effects in Hot-Electron-Driven Chemical Reactions. ACS Nano. 18(50). 34332–34340. 2 indexed citations
4.
Hsiao, Kai‐Yuan, Ming‐Yen Lu, Mario Hofmann, et al.. (2023). Bifunctional Semimetal as a Plasmonic Resonator and Ohmic Contact for an Ultrasensitive MoS2 Photodetector. ACS Photonics. 10(5). 1495–1503. 12 indexed citations
5.
Chuang, Chiashain, et al.. (2023). Realizing High-Quality Interfaces in Two-Dimensional Material Spin Valves. ACS Materials Letters. 6(1). 94–99. 4 indexed citations
6.
Wang, Hao, et al.. (2023). Confined VLS Growth of Single-Layer 2D Tungsten Nitrides. ACS Applied Materials & Interfaces. 16(1). 1705–1711. 2 indexed citations
7.
Kalbáč, Martin, Ping-Hui Lin, Cheng‐Maw Cheng, et al.. (2023). Tungsten Nitride (W5N6): An Ultraresilient 2D Semimetal. Nano Letters. 24(1). 67–73. 6 indexed citations
8.
Hofmann, Mario, et al.. (2023). Nitrogen Pretreatment of Growth Substrates for Vacancy-Saturated MoS2. ACS Applied Materials & Interfaces. 15(36). 42746–42752. 1 indexed citations
9.
Chiu, Sheng‐Kuei, Hyungbin Son, Golam Haider, et al.. (2022). Mediator-assisted synthesis of WS2 with ultrahigh-optoelectronic performance at multi-wafer scale. npj 2D Materials and Applications. 6(1). 17 indexed citations
10.
Su, Yen‐Hsun, et al.. (2022). 2D Material‐Enabled Optical Rectennas with Ultrastrong Light‐Electron Coupling. Small. 18(37). e2202199–e2202199. 4 indexed citations
11.
Singh, Mukesh, et al.. (2022). Chemical vapor deposition merges MoS2 grains into high-quality and centimeter-scale films on Si/SiO2. RSC Advances. 12(10). 5990–5996. 5 indexed citations
13.
Hofmann, Mario, et al.. (2021). Ultra-thin 2D transition metal monochalcogenide crystals by planarized reactions. npj 2D Materials and Applications. 5(1). 8 indexed citations
14.
Shen, Yu-An, et al.. (2021). Graphene as a diffusion barrier at the interface of Liquid–State low-melting Sn–58Bi alloy and copper foil. Applied Surface Science. 578. 152108–152108. 24 indexed citations
15.
Chen, Serena H., Yifang Chen, Wei‐Hung Chen, et al.. (2021). Reaction-limited graphene CVD surpasses silicon production rate. 2D Materials. 8(3). 35016–35016. 4 indexed citations
16.
Dung, Nguyen Duc, et al.. (2020). Electromagnetic Interference Shielding by Transparent Graphene/Nickel Mesh Films. ACS Applied Nano Materials. 3(8). 7474–7481. 42 indexed citations
17.
Yadav, Kanchan, Monika Kataria, Hung‐I Lin, et al.. (2019). Heavy Mediator at Quantum Dot/Graphene Heterojunction for Efficient Charge Carrier Transfer: Alternative Approach for High-Performance Optoelectronic Devices. ACS Applied Materials & Interfaces. 11(29). 26518–26527. 14 indexed citations
18.
Nguyen, Yen, et al.. (2018). Electrostatic Control over the Electrochemical Reactivity of Graphene. Chemistry of Materials. 30(20). 7178–7182. 14 indexed citations
19.
Chuang, Chiashain, Chi‐Te Liang, Gil‐Ho Kim, et al.. (2018). Large, non-saturating magnetoresistance in single layer chemical vapor deposition graphene with an h-BN capping layer. Carbon. 136. 211–216. 13 indexed citations
20.
Hsieh, Ya‐Ping, et al.. (2017). Recrystallization of copper at a solid interface for improved CVD graphene growth. RSC Advances. 7(7). 3736–3740. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026