D.B. Rensch

1.4k total citations
67 papers, 898 citations indexed

About

D.B. Rensch is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, D.B. Rensch has authored 67 papers receiving a total of 898 indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 7 papers in Condensed Matter Physics. Recurrent topics in D.B. Rensch's work include Radio Frequency Integrated Circuit Design (31 papers), Semiconductor Quantum Structures and Devices (21 papers) and Semiconductor Lasers and Optical Devices (14 papers). D.B. Rensch is often cited by papers focused on Radio Frequency Integrated Circuit Design (31 papers), Semiconductor Quantum Structures and Devices (21 papers) and Semiconductor Lasers and Optical Devices (14 papers). D.B. Rensch collaborates with scholars based in United States and Germany. D.B. Rensch's co-authors include R.A. York, Nai-Shuo Cheng, W.E. Stanchina, Arthur N. Chester, Pengcheng Jia, J.F. Jensen, Robert A. Metzger, M. Case, M. Hafizi and Jack Y. Josefowicz and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

D.B. Rensch

64 papers receiving 822 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D.B. Rensch United States	16	764	383	115	83	62	67	898
Jeff Beck United States	13	541 0.7×	254 0.7×	88 0.8×	81 1.0×	33 0.5×	35	640
Huey-Ming Tzeng United States	7	425 0.6×	477 1.2×	21 0.2×	178 2.1×	12 0.2×	12	759
R.J. Mattauch United States	16	760 1.0×	398 1.0×	42 0.4×	38 0.5×	115 1.9×	73	947
Alan H. Paxton United States	13	377 0.5×	267 0.7×	25 0.2×	26 0.3×	38 0.6×	48	511
Wojciech Śmigaj France	14	347 0.5×	438 1.1×	66 0.6×	144 1.7×	31 0.5×	25	623
J. Gill United States	15	1.1k 1.4×	287 0.7×	129 1.1×	183 2.2×	70 1.1×	37	1.3k
S. T. Eng Sweden	16	610 0.8×	493 1.3×	12 0.1×	72 0.9×	25 0.4×	62	815
Paul D. LeVan United States	12	362 0.5×	236 0.6×	118 1.0×	78 0.9×	9 0.1×	59	583
Andrew J. Gatesman United States	15	565 0.7×	176 0.5×	160 1.4×	113 1.4×	32 0.5×	60	764
Jérôme Genest Canada	22	1.1k 1.5×	1.3k 3.3×	97 0.8×	192 2.3×	30 0.5×	106	1.6k

Countries citing papers authored by D.B. Rensch

Since Specialization

Citations

This map shows the geographic impact of D.B. Rensch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.B. Rensch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.B. Rensch more than expected).

Fields of papers citing papers by D.B. Rensch

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.B. Rensch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.B. Rensch. The network helps show where D.B. Rensch may publish in the future.

Co-authorship network of co-authors of D.B. Rensch

This figure shows the co-authorship network connecting the top 25 collaborators of D.B. Rensch. A scholar is included among the top collaborators of D.B. Rensch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.B. Rensch. D.B. Rensch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Cheng, Nai-Shuo, et al.. (2003). A 60-watt X-band spatially combined solid-state amplifier. 2. 539–542. 19 indexed citations

Mishra, Umesh K., et al.. (2003). 48 GHz AlInAs/GaInAs heterojunction bipolar transistors. 873–875. 2 indexed citations

Choudhury, Debabani, et al.. (2002). A method of heatsink fabrication for millimeter wave high-power Gunn devices. 386–389. 3 indexed citations

Bhattacharya, Uma, et al.. (2002). 100 GHz transferred-substrate Schottky-collector heterojunction bipolar transistor. 145–148. 1 indexed citations

Nguyen, C., et al.. (2002). High-performance AlInAs/GaInAs/InP DHBT X-band power cell with InP emitter ballast resistor. 573–582. 2 indexed citations

Larson, L.E., M. Case, S. E. Rosenbaum, et al.. (2002). Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits. 80–81,. 29 indexed citations

Stanchina, W.E., Robert A. Metzger, J.F. Jensen, M. Hafizi, & D.B. Rensch. (1993). Fabrication, Performance, and Reliability of InP-Based HBTs. MRS Proceedings. 300. 7 indexed citations

Hafizi, M., et al.. (1992). 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology. IEEE Electron Device Letters. 13(12). 612–614. 47 indexed citations

Jensen, J.F., et al.. (1991). AlInAs/GaInAs HBT IC technology. IEEE Journal of Solid-State Circuits. 26(3). 415–421. 34 indexed citations

10.

Rensch, D.B., et al.. (1991). Fabrication and characterization of high-T/sub c/ superconducting X-band resonators and bandpass filters. IEEE Transactions on Magnetics. 27(2). 2553–2556. 9 indexed citations

11.

Wilson, R. G., J.F. Jensen, D.B. Rensch, et al.. (1991). Emitter injection and collector current ideality in abrupt heterojunction AlInAs/GaInAs HBTs. Solid-State Electronics. 34(12). 1319–1324. 5 indexed citations

12.

Jackson, Douglas, et al.. (1988). Detectors For Monolithic Optoelectronics. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 839. 161–161. 2 indexed citations

13.

Jackson, Douglas, et al.. (1988). Detectors for monolithic optoelectronics. Fiber & Integrated Optics. 7(3). 229–233. 1 indexed citations

14.

Josefowicz, Jack Y. & D.B. Rensch. (1987). High-temperature stable W/GaAs interface and application to metal–semiconductor field-effect transistors and digital circuits. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(6). 1707–1715. 26 indexed citations

15.

Corelli, J. C., A. J. Steckl, Robert H. Reuss, et al.. (1986). Comparison of N P N transistors fabricated with broad beam and spatial profiling using focused beam ion implantation. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(1). 375–379. 8 indexed citations

16.

Reuss, Robert H., et al.. (1985). Vertical n p n transistors by maskless boron implantation. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(1). 62–66. 13 indexed citations

17.

Rensch, D.B., et al.. (1984). Recrystallization of Si films on thermal SiO₂-coated Si substrates using a high-speed e-beam line source. IEEE Electron Device Letters. 5(2). 38–40. 3 indexed citations

18.

Rensch, D.B.. (1974). Three-Dimensional Unstable Resonator Calculations with Laser Medium. Applied Optics. 13(11). 2546–2546. 26 indexed citations

19.

Rensch, D.B.. (1969). Extinction and backscatter of visible and infrared laser radiation by atmospheric aerosols /. OhioLink ETD Center (Ohio Library and Information Network). 1 indexed citations

20.

Rensch, D.B., et al.. (1969). Water Vapor Continuum Absorption of Carbon Dioxide Laser Radiation near 10 μ. Applied Optics. 8(7). 1471–1471. 52 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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