W. J. Maeng

3.2k citations

55 papers · 2.8k indexed · 2 hit papers · h-index 23

Electrical and Electronic Engineering top 1%
Materials Chemistry top 2%
Electronic, Optical and Magnetic Materials top 5%
Polymers and Plastics top 5%
Biomedical Engineering

Co-authors: Jin‐Seong Park Joon Seok Park Hyun‐Suk Kim Hyungjun Kim Han‐Bo‐Ram Lee H. Kim Woo‐Hee Kim Jozeph Park
Topics: Semiconductor materials and devices (41 papers)Thin-Film Transistor Technologies (22 papers)ZnO doping and properties (16 papers)
Cited by: Electrical and Electronic Engineering Materials Chemistry Polymers and Plastics
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: South Korea United States United Kingdom

In The Last Decade

W. J. Maeng

55 papers receiving 2.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

2011 890 citations Joon Seok Park, W. J. Maeng et al. Thin Solid Films profile →
Applications of atomic layer deposition to nanofabrication and emerging nanodevices

2008 500 citations Hyungjun Kim, Han‐Bo‐Ram Lee et al. Thin Solid Films profile →

Peers

Countries citing papers authored by W. J. Maeng

Since Specialization

Citations

This map shows the geographic impact of W. J. Maeng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. J. Maeng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. J. Maeng more than expected).

Fields of papers citing papers by W. J. Maeng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. J. Maeng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. J. Maeng. The network helps show where W. J. Maeng may publish in the future.

Co-authorship network of co-authors of W. J. Maeng

This figure shows the co-authorship network connecting the top 25 collaborators of W. J. Maeng. A scholar is included among the top collaborators of W. J. Maeng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. J. Maeng. W. J. Maeng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films 2021 ·arXiv (Cornell University) ·(unknown),S. Lindemann,Bo Wang,W. J. Maeng,J. Frederick,Fei Li,Yongseong Choi,Paul Thompson,Jong‐Woo Kim,Tim Mooney,V. Vaithyanathan,Darrell G. Schlom,M. S. Rzchowski,Long‐Qing Chen,Philip J. Ryan,Chang‐Beom Eom	8
2	Lattice reorientation in tetragonal PMN-PT thin film induced by focused ion beam preparation for transmission electron microscopy 2017 ·Journal of Applied Physics ·Thibaud Denneulin,W. J. Maeng,Chang‐Beom Eom,Martin Hÿtch	3
3	Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films 2016 ·Applied Physics Letters ·J. Frederick,(unknown),W. J. Maeng,(unknown),J. P. Podkaminer,Wittawat Saenrang,V. Vaithyanathan,Fei Li,Long‐Qing Chen,Darrell G. Schlom,Susan Trolier‐McKinstry,M. S. Rzchowski,Chang‐Beom Eom	10
4	Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties 2015 ·Ceramics International ·W. J. Maeng,Seung-Hwan Lee,Jung-Dae Kwon,Jozeph Park,Jin‐Seong Park	63
5	Effect of Al concentration on the electrical characteristics of solution-processed Al doped ZnSnO thin film transistors 2014 ·Ceramics International ·(unknown),W. J. Maeng,Jin‐Seong Park	50
6	Highly (111)-oriented multiferroic BiFeO3 thin film on a glass substrate 2013 ·Journal of Crystal Growth ·W. J. Maeng,Jong Yeog Son	8
7	Effects of Postannealing Process on the Properties of RuO₂ Films and Their Performance As Electrodes in Organic Thin Film Transistors or Solar Cells 2012 ·ACS Applied Materials & Interfaces ·Dong‐Jin Yun,(unknown),Sae Byeok Jo,W. J. Maeng,Seunghyup Lee,Sung Hoon Park,Ji‐Wook Jang,Kilwon Cho,Shi‐Woo Rhee	20
8	Studies on optical, structural and electrical properties of atomic layer deposited Al-doped ZnO thin films with various Al concentrations and deposition temperatures 2011 ·Journal of Physics D Applied Physics ·W. J. Maeng,Jaewon Lee,(unknown),Kwun‐Bum Chung,Jin‐Seong Park	69
9	The Influence of In/Zn Ratio on the Performance and Negative-Bias Instability of Hf–In–Zn–O Thin-Film Transistors Under Illumination 2011 ·IEEE Electron Device Letters ·Hyun‐Suk Kim,Joon Seok Park,W. J. Maeng,Kyoung Seok Son,Tae Sang Kim,Myungkwan Ryu,Jiyoul Lee,Jae Cheol Lee,(unknown),Seongil Im,Sangyoon Lee	19
10	The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination 2010 ·Applied Physics Letters ·Hyun‐Suk Kim,Kyung‐Bae Park,Kyoung Seok Son,Joon Seok Park,W. J. Maeng,Tae Sang Kim,Kwang-Hee Lee,Eok Su Kim,Jiyoul Lee,Joonki Suh,(unknown),Myung Kwan Ryu,Sangyoon Lee,Kimoon Lee,Seongil Im	29
11	Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance 2010 ·Applied Physics Letters ·Joon Seok Park,Tae Sang Kim,Kyoung Seok Son,Eunha Lee,Ji Sim Jung,Kwang-Hee Lee,W. J. Maeng,Hyun‐Suk Kim,Eok Su Kim,Kyung‐Bae Park,Jang‐Yeon Kwon,Myung Kwan Ryu,Sangyoon Lee	28
12	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer 2010 ·Applied Physics Letters ·W. J. Maeng,Woo‐Hee Kim,Ja Hoon Koo,Seungmin Lim,Chang‐Soo Lee,Taeyoon Lee,Hyungjun Kim	14
13	Interface roughness effect between gate oxide and metal gate on dielectric property 2009 ·Thin Solid Films ·Jong Yeog Son,W. J. Maeng,Woo‐Hee Kim,Young‐Han Shin,Hyungjun Kim	10
14	HfO[sub 2]/HfO[sub x]N[sub y]/HfO[sub 2] Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer 2009 ·Journal of The Electrochemical Society ·W. J. Maeng,Gil Ho Gu,C. G. Park,Kayoung Lee,Taeyoon Lee,Hyungjun Kim	20
15	Electrical Properties of Atomic Layer Deposition HfO[sub 2] and HfO[sub x]N[sub y] on Si Substrates with Various Crystal Orientations 2008 ·Journal of The Electrochemical Society ·W. J. Maeng,Hyungjun Kim	16
16	Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen 2008 ·Thin Solid Films ·Sang Joon Park,Woo‐Hee Kim,W. J. Maeng,Yosheph Yang,C. G. Park,Hyungjun Kim,(unknown),(unknown),Woo Seong	45
17	Applications of atomic layer deposition to nanofabrication and emerging nanodevicesbreakdown → 2008 ·Thin Solid Films ·Hyungjun Kim,Han‐Bo‐Ram Lee,W. J. Maeng	500
18	Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition 2007 ·Applied Physics Letters ·W. J. Maeng,S. J. Lim,(unknown),H. Kim	10
19	Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics 2007 ·Applied Physics Letters ·W. J. Maeng,H. Kim	20
20	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode 2007 ·Microelectronic Engineering ·Sang-Joon Park,Woo‐Hee Kim,Han‐Bo‐Ram Lee,W. J. Maeng,H. Kim	85

About W. J. Maeng

W. J. Maeng is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 55 papers that have together received 2.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (41 papers), Thin-Film Transistor Technologies (22 papers) and ZnO doping and properties (16 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.5k citations), Materials Chemistry (2.0k citations) and Polymers and Plastics (378 citations). W. J. Maeng has collaborated with scholars based in South Korea, United States and United Kingdom. Frequent co-authors include Jin‐Seong Park, Joon Seok Park, Hyun‐Suk Kim, Hyungjun Kim, Han‐Bo‐Ram Lee, H. Kim, Woo‐Hee Kim, Jozeph Park, Hyungjun Kim and Dongwon Choi. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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