W. J. Maeng

3.2k total citations · 2 hit papers
55 papers, 2.8k citations indexed

About

W. J. Maeng is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, W. J. Maeng has authored 55 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 35 papers in Materials Chemistry and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in W. J. Maeng's work include Semiconductor materials and devices (41 papers), Thin-Film Transistor Technologies (22 papers) and ZnO doping and properties (16 papers). W. J. Maeng is often cited by papers focused on Semiconductor materials and devices (41 papers), Thin-Film Transistor Technologies (22 papers) and ZnO doping and properties (16 papers). W. J. Maeng collaborates with scholars based in South Korea, United States and United Kingdom. W. J. Maeng's co-authors include Jin‐Seong Park, Joon Seok Park, Hyun‐Suk Kim, Hyungjun Kim, Han‐Bo‐Ram Lee, H. Kim, Woo‐Hee Kim, Jozeph Park, Hyungjun Kim and Dongwon Choi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

W. J. Maeng

55 papers receiving 2.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

2011 890 citations Joon Seok Park, W. J. Maeng et al. Thin Solid Films profile →
Applications of atomic layer deposition to nanofabrication and emerging nanodevices

2008 500 citations Hyungjun Kim, Han‐Bo‐Ram Lee et al. Thin Solid Films profile →

Peers

W. J. Maeng

EEE

EOMM

Woo‐Hee Kim South Korea

S. Uthanna India

A‐Rang Jang South Korea

Sang Yeol Lee South Korea

Binni Varghese Singapore

Hariklia Deligianni United States

J. Hüpkes Germany

S.S. Fouad Egypt

A. Marques Portugal

P. Sreedhara Reddy India

Woo‐Hee Kim South Korea

W. J. Maeng

2.1k ×0.9

EEE

1.7k ×0.9

508 ×1.2

EOMM

163 ×0.4

316 ×1.2

Citations per year, relative to W. J. Maeng W. J. Maeng (= 1×) peers Woo‐Hee Kim

Countries citing papers authored by W. J. Maeng

Since Specialization

Citations

This map shows the geographic impact of W. J. Maeng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. J. Maeng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. J. Maeng more than expected).

Fields of papers citing papers by W. J. Maeng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. J. Maeng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. J. Maeng. The network helps show where W. J. Maeng may publish in the future.

Co-authorship network of co-authors of W. J. Maeng

This figure shows the co-authorship network connecting the top 25 collaborators of W. J. Maeng. A scholar is included among the top collaborators of W. J. Maeng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. J. Maeng. W. J. Maeng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lindemann, S., Bo Wang, W. J. Maeng, et al.. (2021). Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films. arXiv (Cornell University). 8 indexed citations

Denneulin, Thibaud, W. J. Maeng, Chang‐Beom Eom, & Martin Hÿtch. (2017). Lattice reorientation in tetragonal PMN-PT thin film induced by focused ion beam preparation for transmission electron microscopy. Journal of Applied Physics. 121(5). 3 indexed citations

Frederick, J., W. J. Maeng, J. P. Podkaminer, et al.. (2016). Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films. Applied Physics Letters. 108(13). 10 indexed citations

Maeng, W. J., Seung-Hwan Lee, Jung-Dae Kwon, Jozeph Park, & Jin‐Seong Park. (2015). Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties. Ceramics International. 42(4). 5517–5522. 63 indexed citations

Maeng, W. J., et al.. (2014). Effect of Al concentration on the electrical characteristics of solution-processed Al doped ZnSnO thin film transistors. Ceramics International. 40(6). 8769–8774. 50 indexed citations

Maeng, W. J. & Jong Yeog Son. (2013). Highly (111)-oriented multiferroic BiFeO3 thin film on a glass substrate. Journal of Crystal Growth. 367. 24–26. 8 indexed citations

Yun, Dong‐Jin, Sae Byeok Jo, W. J. Maeng, et al.. (2012). Effects of Postannealing Process on the Properties of RuO₂ Films and Their Performance As Electrodes in Organic Thin Film Transistors or Solar Cells. ACS Applied Materials & Interfaces. 4(9). 4588–4594. 20 indexed citations

Maeng, W. J., et al.. (2011). Studies on optical, structural and electrical properties of atomic layer deposited Al-doped ZnO thin films with various Al concentrations and deposition temperatures. Journal of Physics D Applied Physics. 44(44). 445305–445305. 69 indexed citations

Kim, Hyun‐Suk, Joon Seok Park, W. J. Maeng, et al.. (2011). The Influence of In/Zn Ratio on the Performance and Negative-Bias Instability of Hf–In–Zn–O Thin-Film Transistors Under Illumination. IEEE Electron Device Letters. 32(9). 1251–1253. 19 indexed citations

10.

Kim, Hyun‐Suk, Kyung‐Bae Park, Kyoung Seok Son, et al.. (2010). The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination. Applied Physics Letters. 97(10). 29 indexed citations

11.

Park, Joon Seok, Tae Sang Kim, Kyoung Seok Son, et al.. (2010). Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance. Applied Physics Letters. 97(16). 28 indexed citations

12.

Maeng, W. J., Woo‐Hee Kim, Ja Hoon Koo, et al.. (2010). Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer. Applied Physics Letters. 96(8). 14 indexed citations

13.

Son, Jong Yeog, W. J. Maeng, Woo‐Hee Kim, Young‐Han Shin, & Hyungjun Kim. (2009). Interface roughness effect between gate oxide and metal gate on dielectric property. Thin Solid Films. 517(14). 3892–3895. 10 indexed citations

14.

Maeng, W. J., Gil Ho Gu, C. G. Park, et al.. (2009). HfO[sub 2]/HfO[sub x]N[sub y]/HfO[sub 2] Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer. Journal of The Electrochemical Society. 156(8). G109–G109. 20 indexed citations

15.

Maeng, W. J. & Hyungjun Kim. (2008). Electrical Properties of Atomic Layer Deposition HfO[sub 2] and HfO[sub x]N[sub y] on Si Substrates with Various Crystal Orientations. Journal of The Electrochemical Society. 155(4). H267–H267. 16 indexed citations

16.

Park, Sang Joon, Woo‐Hee Kim, W. J. Maeng, et al.. (2008). Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen. Thin Solid Films. 516(21). 7345–7349. 45 indexed citations

17.

Kim, Hyungjun, Han‐Bo‐Ram Lee, & W. J. Maeng. (2008). Applications of atomic layer deposition to nanofabrication and emerging nanodevices. Thin Solid Films. 517(8). 2563–2580. 500 indexed citations breakdown →

18.

Maeng, W. J., et al.. (2007). Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition. Applied Physics Letters. 90(6). 10 indexed citations

19.

Maeng, W. J. & H. Kim. (2007). Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics. Applied Physics Letters. 91(9). 20 indexed citations

20.

Park, Sang-Joon, Woo‐Hee Kim, Han‐Bo‐Ram Lee, W. J. Maeng, & H. Kim. (2007). Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode. Microelectronic Engineering. 85(1). 39–44. 85 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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