S. J. Lim

498 total citations
15 papers, 444 citations indexed

About

S. J. Lim is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, S. J. Lim has authored 15 papers receiving a total of 444 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 2 papers in Polymers and Plastics. Recurrent topics in S. J. Lim's work include ZnO doping and properties (12 papers), Thin-Film Transistor Technologies (9 papers) and Semiconductor materials and devices (8 papers). S. J. Lim is often cited by papers focused on ZnO doping and properties (12 papers), Thin-Film Transistor Technologies (9 papers) and Semiconductor materials and devices (8 papers). S. J. Lim collaborates with scholars based in South Korea, Cyprus and Taiwan. S. J. Lim's co-authors include Hyungjun Kim, Jin‐Seong Park, Hyungjun Kim, Jae‐Min Kim, Jaehee Cho, Woo Seong, Jong Yeog Son, Do Young ‍Kim, Soon‐Ju Kwon and Taewook Nam and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Japanese Journal of Applied Physics.

In The Last Decade

S. J. Lim

15 papers receiving 431 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. J. Lim South Korea	9	381	373	103	53	51	15	444
Mustafa Öztaş Türkiye	12	438 1.1×	530 1.4×	76 0.7×	30 0.6×	35 0.7×	22	572
В. И. Кушниренко Ukraine	10	261 0.7×	359 1.0×	148 1.4×	38 0.7×	15 0.3×	30	394
Sandeep Sohal United States	11	326 0.9×	305 0.8×	47 0.5×	38 0.7×	43 0.8×	20	418
Pengfei Cheng China	12	250 0.7×	402 1.1×	141 1.4×	31 0.6×	43 0.8×	31	448
J. Trajić Serbia	12	323 0.8×	402 1.1×	39 0.4×	34 0.6×	15 0.3×	50	471
B. J. Sapjeta Germany	5	359 0.9×	198 0.5×	79 0.8×	35 0.7×	64 1.3×	5	383
A. Hafdallah Algeria	9	325 0.9×	389 1.0×	83 0.8×	34 0.6×	80 1.6×	25	462
C. Bekeny Germany	7	210 0.6×	333 0.9×	143 1.4×	32 0.6×	19 0.4×	8	356
Sharada Govinda India	9	327 0.9×	354 0.9×	168 1.6×	22 0.4×	37 0.7×	13	466
Lucie Landová Czechia	10	491 1.3×	409 1.1×	90 0.9×	16 0.3×	150 2.9×	28	572

Countries citing papers authored by S. J. Lim

Since Specialization

Citations

This map shows the geographic impact of S. J. Lim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. J. Lim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. J. Lim more than expected).

Fields of papers citing papers by S. J. Lim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. J. Lim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. J. Lim. The network helps show where S. J. Lim may publish in the future.

Co-authorship network of co-authors of S. J. Lim

This figure shows the co-authorship network connecting the top 25 collaborators of S. J. Lim. A scholar is included among the top collaborators of S. J. Lim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. J. Lim. S. J. Lim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

15 of 15 papers shown

Lim, S. J., et al.. (2024). Enhancing the Stability and Mobility of TFTs via Indium–Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient. Nanomaterials. 14(15). 1252–1252. 6 indexed citations

Lim, S. J., et al.. (2024). Enhancing oxide semiconductor channel performance through heterojunction engineering of indium–tungsten oxide and indium–gallium–zinc oxide. Japanese Journal of Applied Physics. 63(12). 12SP03–12SP03. 1 indexed citations

Kim, Jae‐Min, S. J. Lim, Taewook Nam, Do Young ‍Kim, & Hyungjun Kim. (2011). The Effects of Ultraviolet Exposure on the Device Characteristics of Atomic Layer Deposited-ZnO:N Thin Film Transistors. Journal of The Electrochemical Society. 158(5). J150–J154. 22 indexed citations

Kim, Jae Min, Taewook Nam, S. J. Lim, et al.. (2011). Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties. Applied Physics Letters. 98(14). 42 indexed citations

Kim, Jae‐Min, S. J. Lim, & Hyungjun Kim. (2010). The Electrical Properties of Atomic Layer Deposition of ZnO:N Thin Film Transistors by Ultraviolet Exposure. ECS Transactions. 33(5). 301–311. 1 indexed citations

Lim, S. J., Jae‐Min Kim, Doyoung Kim, et al.. (2010). The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor. Electrochemical and Solid-State Letters. 13(5). H151–H151. 13 indexed citations

Kim, Hyungjun, S. J. Lim, Jae‐Min Kim, & Do Young ‍Kim. (2010). High performance transparent thin film transistor with atomic layer deposition ZnO based active channel layer. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7603. 760310–760310. 4 indexed citations

Kim, Hyungjun, Woo‐Hee Kim, Han‐Bo‐Ram Lee, & S. J. Lim. (2009). The Benefits of Atomic Layer Deposition in Non-semiconductor Applications; Producing Metallic Nanomaterials and Fabrication of Flexible Display. ECS Transactions. 25(4). 101–111. 1 indexed citations

Lim, S. J., Jae‐Min Kim, Doyoung Kim, et al.. (2009). Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties. Journal of The Electrochemical Society. 157(2). H214–H214. 52 indexed citations

10.

Lim, S. J., et al.. (2008). In-Situ Doping during ZnO Atomic Layer Deposition. Journal of the Korean Physical Society. 53(1). 253–257. 10 indexed citations

11.

Son, Jong Yeog, S. J. Lim, Jaehee Cho, Woo Seong, & Hyungjun Kim. (2008). Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor. Applied Physics Letters. 93(5). 63 indexed citations

12.

Lim, S. J., et al.. (2007). High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO. Applied Physics Letters. 91(18). 160 indexed citations

13.

Maeng, W. J., et al.. (2007). Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition. Applied Physics Letters. 90(6). 10 indexed citations

14.

Lim, S. J., Soon‐Ju Kwon, & H. Kim. (2006). The application of atomic layer deposition for transparent thin film transistor. 634–635. 2 indexed citations

15.

Lim, P. K., et al.. (2003). Raman scattering investigation of Yb : YAG crystals grown by the Czochralski method. Journal of Raman Spectroscopy. 34(11). 882–885. 57 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact