W. Höppner

765 total citations
9 papers, 357 citations indexed

About

W. Höppner is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Structural Biology. According to data from OpenAlex, W. Höppner has authored 9 papers receiving a total of 357 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 2 papers in Structural Biology. Recurrent topics in W. Höppner's work include Integrated Circuits and Semiconductor Failure Analysis (4 papers), Force Microscopy Techniques and Applications (2 papers) and Advancements in Semiconductor Devices and Circuit Design (2 papers). W. Höppner is often cited by papers focused on Integrated Circuits and Semiconductor Failure Analysis (4 papers), Force Microscopy Techniques and Applications (2 papers) and Advancements in Semiconductor Devices and Circuit Design (2 papers). W. Höppner collaborates with scholars based in Germany and Russia. W. Höppner's co-authors include Peter Schwander, F.H. Baumann, A. Ourmazd, W.D. Rau, H. Rücker, B. Heinemann, D. Schmidt, Bernd Tillack, U. Haak and D. Knoll and has published in prestigious journals such as Physical Review Letters, Journal of Applied Physics and Microelectronic Engineering.

In The Last Decade

W. Höppner

9 papers receiving 343 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Höppner Germany 5 217 201 135 110 62 9 357
A C Twitchett United Kingdom 8 185 0.9× 232 1.2× 159 1.2× 90 0.8× 44 0.7× 10 306
B.D. Forbes Australia 8 71 0.3× 221 1.1× 196 1.5× 114 1.0× 50 0.8× 11 324
J. S. McMurray United States 12 377 1.7× 134 0.7× 88 0.7× 315 2.9× 148 2.4× 16 497
B. van Someren Netherlands 8 156 0.7× 135 0.7× 192 1.4× 98 0.9× 85 1.4× 22 389
A. C. Twitchett-Harrison United Kingdom 9 111 0.5× 159 0.8× 105 0.8× 144 1.3× 60 1.0× 13 302
P. A. Coxon Greece 10 365 1.7× 34 0.2× 78 0.6× 58 0.5× 56 0.9× 22 453
Y.R. Xing China 9 231 1.1× 20 0.1× 186 1.4× 175 1.6× 53 0.9× 17 365
Kotone Akiyama Japan 9 123 0.6× 41 0.2× 10 0.1× 239 2.2× 109 1.8× 18 310
C. Domke Germany 12 291 1.3× 40 0.2× 28 0.2× 366 3.3× 59 1.0× 15 479
Yoshihiko Yuba Japan 11 312 1.4× 18 0.1× 60 0.4× 150 1.4× 31 0.5× 52 368

Countries citing papers authored by W. Höppner

Since Specialization
Citations

This map shows the geographic impact of W. Höppner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Höppner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Höppner more than expected).

Fields of papers citing papers by W. Höppner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Höppner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Höppner. The network helps show where W. Höppner may publish in the future.

Co-authorship network of co-authors of W. Höppner

This figure shows the co-authorship network connecting the top 25 collaborators of W. Höppner. A scholar is included among the top collaborators of W. Höppner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Höppner. W. Höppner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

9 of 9 papers shown
1.
Birkholz, M., K.‐E. Ehwald, J. Bauer, et al.. (2012). Fabrication of MEMS actuators from the BEOL of a 0.25 μm BiCMOS technology platform. Microelectronic Engineering. 97. 276–279. 3 indexed citations
2.
Rücker, H., R. Barth, D. Bolze, et al.. (2005). Integration of high-performance SiGe:C HBTs with thin-film SOI CMOS. 239–242. 5 indexed citations
3.
Rücker, H., B. Heinemann, R. Barth, et al.. (2004). SiGe:C BiCMOS technology with 3.6 ps gate delay. 5.3.1–5.3.4. 34 indexed citations
4.
Rau, W.D., F.H. Baumann, H.-H. Vuong, et al.. (2002). Two-dimensional dopant profiling of deep submicron MOS devices by electron holography. 713–716. 8 indexed citations
5.
Rau, W.D., Peter Schwander, F.H. Baumann, W. Höppner, & A. Ourmazd. (1999). Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography. Physical Review Letters. 82(12). 2614–2617. 282 indexed citations
6.
Mehr, Wolfgang, et al.. (1996). Ultra sharp crystalline silicon tip array used as field emitter. Microelectronic Engineering. 30(1-4). 395–398. 16 indexed citations
7.
Gaworzewski, P., et al.. (1996). The influence of plastic properties of the probe tip/Si contact on spreading resistance analyses. Journal of Applied Physics. 79(1). 129–133. 4 indexed citations
8.
Gaworzewski, P., et al.. (1996). Properties of probe tip/Si contacts and their connection to spreading resistance analyses. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(1). 373–379. 1 indexed citations
9.
Bauer, J., et al.. (1991). Submicrometer photolithography by surface imaging - experiment and simulation. Microelectronic Engineering. 13(1-4). 89–92. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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