V.W.L. Chin

1.3k citations

47 papers · 1.0k indexed · 1 hit paper · h-index 16

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Atomic and Molecular Physics, and Optics 37
- Semiconductor Quantum Structures and Devices 23
- Semiconductor materials and interfaces 17
Electrical and Electronic Engineering 38
- Advanced Semiconductor Detectors and Materials 17
- Semiconductor materials and devices 12
- Silicon and Solar Cell Technologies 8
- Integrated Circuits and Semiconductor Failure Analysis 7

Co-authors: T.L. Tansley Tanakorn Osotchan Martin A. Green J. W. V. Storey Renate Egan John P. A. Ioannidis Sally Cripps Martin A. Tanner
Journals: Solid-State Electronics (12 papers)Journal of Applied Physics (11 papers)Physical review. B, Condensed matter (3 papers)Solid State Communications (2 papers)Semiconductor Science and Technology (2 papers)
Partner nations: Australia United States Germany

In The Last Decade

V.W.L. Chin

46 papers receiving 991 citations

Hit Papers

align trajectories log scale

Electron mobilities in gallium, indium, and aluminum nitrides 1994 · 394 citations

Peers

Countries citing papers authored by V.W.L. Chin

Since Specialization

Citations

This map shows the geographic impact of V.W.L. Chin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V.W.L. Chin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V.W.L. Chin more than expected).

Fields of papers citing papers by V.W.L. Chin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V.W.L. Chin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V.W.L. Chin. The network helps show where V.W.L. Chin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V.W.L. Chin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V.W.L. Chin Line = papers co-authored together V.W.L. Chin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Effect estimates of COVID-19 non-pharmaceutical interventions are non-robust and highly model-dependent Journal of Clinical Epidemiology ·V.W.L. Chin, John P. A. Ioannidis, Martin A. Tanner, Sally Cripps	2021	43
2	Noncontact thickness and composition assessment of a strained AlGaAs/AlAs/InGaAs double barrier multiple quantum well structure Journal of Applied Physics ·V.W.L. Chin, Renate Egan, Tanakorn Osotchan, عبدالخالق عبدالملک عبدالجبار, Stuart Anderson	1996	1
3	Transport mechanism of Γ- andX-band electrons inAlxGa1−xAs/AlAs/GaAs double-barrier quantum-well infrared photodetectors Physical review. B, Condensed matter ·Tanakorn Osotchan, V.W.L. Chin, T.L. Tansley	1996	9
4	Hydrogenation passivation of acceptors in MOCVD grown p-INSB Solid State Communications ·Renate Egan, V.W.L. Chin, Kenneth Butcher, T.L. Tansley	1996	2
5	Hole Transport in the InSbInAs material system Solid State Communications ·Renate Egan, V.W.L. Chin, T.L. Tansley	1995	16
6	Electron mobility in InO.53GaO.47As as a function of concentration and temperature Microelectronics Journal ·V.W.L. Chin, Tanakorn Osotchan, T.L. Tansley	1995	1
7	Electron mobility in GaSb Solid-State Electronics ·V.W.L. Chin	1995	45
8	Photoluminescence, intersubband absorption, and double crystal x-ray diffraction in p-doped InGaAs/AlGaAs strained multiple quantum wells Applied Physics Letters ·V.W.L. Chin, T.L. Tansley, Amy Bondanza, K. Radhakrishnan, Soon Fatt Yoon, Alasdair W. Clark	1994	2
9	Growth, morphology and electrical transport properties of MOCVD-grown p-InSb Semiconductor Science and Technology ·Renate Egan, V.W.L. Chin, T.L. Tansley	1994	15
10	Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure Journal of Applied Physics ·Ewa M. Goldys, V.W.L. Chin, T.L. Tansley, عبدالخالق عبدالملک عبدالجبار	1994	2
11	Reassessment of the piezoelectric constant in GaAs by studying the electron transport of high purity MBE-grown GaAs Solid-State Electronics ·V.W.L. Chin	1994	4
12	Energy distribution of interface state density in AlN/n-GaAs heterostructures formed by laser chemical vapor deposition Solid-State Electronics ·Mukesh Dhetarwal, T.L. Tansley, V.W.L. Chin	1993	0
13	The effect of carrier densities and compensation ratios on the electron mobility of InAsxP1−x Journal of Physics and Chemistry of Solids ·V.W.L. Chin	1992	10
14	Electron mobility in InAs1−xSbx and the effect of alloy scattering Journal of Applied Physics ·V.W.L. Chin, Renate Egan, T.L. Tansley	1991	34
15	A note on current-voltage measurements of n-type and p-type Pd2Si Schottky diodes Solid-State Electronics ·V.W.L. Chin, J. W. V. Storey, Martin A. Green	1991	8
16	The Effect of Sintering Temperature on the Barrier Height of p-type PtSi Schottky Diodes Australian Journal of Physics ·V.W.L. Chin, Yu. G. Parkhomenko, J. W. V. Storey, Daniel Kraus	1991	4
17	The influence of thermal gradients on the characterization of Schottky-barrier diodes IEEE Transactions on Electron Devices ·V.W.L. Chin, Yu. G. Parkhomenko	1990	4
18	Correlation between current-voltage and capacitance-voltage Schottky barrier height on (100) and (110) GaAs and (110) InP surfaces Journal of Applied Physics ·V.W.L. Chin, Martin A. Green, J. W. V. Storey	1990	33
19	Supported Metal Cluster Compounds as Precursors of Fischer-Tropsch Catalysts Applied Catalysis ·Robert S. Armstrong, Lsu Hartmut Kaiser, Alan L. Chaffee, V.W.L. Chin, Zenia Sherman, Marahaini Ahamad, Anthony F. Masters, د. هاله محمد إمام محمد	1989	6
20	Hydrogen and nitrogen broadening of the lines of C2H2 at 14 μm Journal of Quantitative Spectroscopy and Radiative Transfer ·W. E. Blass, V.W.L. Chin	1987	19

About V.W.L. Chin

V.W.L. Chin is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Modeling and Simulation and Mechanics of Materials, having authored 47 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (23 papers), Semiconductor materials and interfaces (17 papers), Advanced Semiconductor Detectors and Materials (17 papers), Semiconductor materials and devices (12 papers), Silicon and Solar Cell Technologies (8 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Nanowire Synthesis and Applications (6 papers) and GaN-based semiconductor devices and materials (6 papers). The work is most often cited by research in Condensed Matter Physics (422 citations), Atomic and Molecular Physics, and Optics (550 citations), Electronic, Optical and Magnetic Materials (209 citations), Electrical and Electronic Engineering (565 citations) and Materials Chemistry (276 citations). V.W.L. Chin has collaborated with scholars based in Australia, United States and Germany. Frequent co-authors include T.L. Tansley, Tanakorn Osotchan, Martin A. Green, J. W. V. Storey, Renate Egan, John P. A. Ioannidis, Sally Cripps, Martin A. Tanner, W. E. Blass and Jan Spielmann. Their work appears in journals such as Solid-State Electronics, Journal of Applied Physics, Physical review. B, Condensed matter, Solid State Communications and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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