V. М. Mikoushkin

439 total citations
50 papers, 341 citations indexed

About

V. М. Mikoushkin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, V. М. Mikoushkin has authored 50 papers receiving a total of 341 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 20 papers in Computational Mechanics. Recurrent topics in V. М. Mikoushkin's work include Ion-surface interactions and analysis (20 papers), Electron and X-Ray Spectroscopy Techniques (20 papers) and Graphene research and applications (15 papers). V. М. Mikoushkin is often cited by papers focused on Ion-surface interactions and analysis (20 papers), Electron and X-Ray Spectroscopy Techniques (20 papers) and Graphene research and applications (15 papers). V. М. Mikoushkin collaborates with scholars based in Russia, Germany and United States. V. М. Mikoushkin's co-authors include V. V. Shnitov, D. Marchenko, S. Yu. Nikonov, Yu. S. Gordeev, Alexandr V. Talyzin, Esko I. Kauppinen, Serhiy M. Luzan, Hua Jiang, Ilya V. Anoshkin and V. Bryzgalov and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

V. М. Mikoushkin

46 papers receiving 332 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. М. Mikoushkin Russia 10 207 139 78 68 63 50 341
D.K. Shuh United States 9 215 1.0× 226 1.6× 96 1.2× 57 0.8× 37 0.6× 15 401
K. Otte Germany 11 283 1.4× 238 1.7× 66 0.8× 15 0.2× 40 0.6× 39 397
Anton Visikovskiy Japan 12 374 1.8× 173 1.2× 124 1.6× 17 0.3× 19 0.3× 35 529
N. D. Afify United Kingdom 13 263 1.3× 124 0.9× 82 1.1× 19 0.3× 17 0.3× 26 379
Linda J. Lingg United States 9 173 0.8× 98 0.7× 66 0.8× 33 0.5× 42 0.7× 13 334
K. Raghavachari United States 6 278 1.3× 327 2.4× 142 1.8× 42 0.6× 48 0.8× 9 464
Zissis Dardas United States 9 185 0.9× 126 0.9× 103 1.3× 47 0.7× 48 0.8× 13 405
E. Harriet Åhlgren Austria 11 349 1.7× 128 0.9× 43 0.6× 13 0.2× 107 1.7× 22 395
I.G. Stara Czechia 15 489 2.4× 141 1.0× 218 2.8× 70 1.0× 24 0.4× 27 593
U. Schroder Germany 11 469 2.3× 200 1.4× 152 1.9× 17 0.3× 19 0.3× 14 500

Countries citing papers authored by V. М. Mikoushkin

Since Specialization
Citations

This map shows the geographic impact of V. М. Mikoushkin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. М. Mikoushkin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. М. Mikoushkin more than expected).

Fields of papers citing papers by V. М. Mikoushkin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. М. Mikoushkin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. М. Mikoushkin. The network helps show where V. М. Mikoushkin may publish in the future.

Co-authorship network of co-authors of V. М. Mikoushkin

This figure shows the co-authorship network connecting the top 25 collaborators of V. М. Mikoushkin. A scholar is included among the top collaborators of V. М. Mikoushkin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. М. Mikoushkin. V. М. Mikoushkin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mikoushkin, V. М., et al.. (2022). Diffusion of Arsenic in GaAs Oxide Irradiated with Ar+ Ions. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 16(5). 759–763.
2.
Mikoushkin, V. М., et al.. (2021). Photovoltaic effect on the n-GaAs surface irradiated with low-energy Ar+ ions. Journal of Materials Science. 56(27). 15180–15187. 2 indexed citations
3.
Mikoushkin, V. М., et al.. (2021). Electron binding energy XPS control of n-GaAs with the atomically clean surface etched by Ar+ ions. Vacuum. 197. 110849–110849. 6 indexed citations
4.
Mikoushkin, V. М., et al.. (2021). P-n nanostructure formation effect of low-energy N2+ ions on n-GaAs surface. Applied Surface Science. 577. 151909–151909. 1 indexed citations
5.
Mikoushkin, V. М., et al.. (2020). The Diagram of p–n Junction Formed on the n-GaAs Surface by 1.5 keV Ar+ Ion Beam. Semiconductors. 54(12). 1702–1705. 1 indexed citations
6.
Mikoushkin, V. М., et al.. (2019). Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface. Semiconductors. 53(14). 1918–1921. 4 indexed citations
7.
Mikoushkin, V. М., et al.. (2018). Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam. Semiconductors. 52(16). 2057–2060. 4 indexed citations
8.
Mikoushkin, V. М., et al.. (2018). The p-n junction formation effect of an Ar + ion beam on the n-GaAs surface. Europhysics Letters (EPL). 122(2). 27002–27002. 7 indexed citations
9.
Mikoushkin, V. М., et al.. (2018). Non-thermal and low-destructive X-ray induced graphene oxide reduction. Journal of Applied Physics. 124(17). 5 indexed citations
10.
Mikoushkin, V. М., et al.. (2018). Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer. Semiconductors. 52(5). 593–596. 8 indexed citations
11.
Mikoushkin, V. М.. (2018). Quantum Well on the n-GaAs Surface Irradiated by Argon Ions. Journal of Experimental and Theoretical Physics Letters. 107(4). 243–246. 1 indexed citations
12.
Mikoushkin, V. М., et al.. (2015). Graphite oxide Auger-electron diagnostics. Journal of Electron Spectroscopy and Related Phenomena. 199. 51–55. 4 indexed citations
13.
Mikoushkin, V. М.. (2014). Electron impact induced collective and atomic-like single-electron Ga3d →εl excitations in GaAsN alloy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 354. 100–104. 3 indexed citations
14.
Mikoushkin, V. М., et al.. (2013). Graphene hydrogenation by molecular hydrogen in the process of graphene oxide thermal reduction. Applied Physics Letters. 102(7). 16 indexed citations
15.
Mikoushkin, V. М., et al.. (2012). Formation of GaAsN/GaN cluster nanostructures on the surface of GaAs by the implantation of low-energy nitrogen ions. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 6(6). 971–974. 7 indexed citations
16.
Shnitov, V. V., V. М. Mikoushkin, Yu. S. Gordeev, Olga V. Boltalina, & I.V. Goldt. (2006). Single and Collective Electron Excitations in the Solid C60F18. Fullerenes Nanotubes and Carbon Nanostructures. 14(2-3). 297–301. 7 indexed citations
17.
Mikoushkin, V. М., et al.. (2006). Correlated electron detachment inH−−Hecollisions. Physical Review A. 74(4). 6 indexed citations
18.
Mikoushkin, V. М., et al.. (2004). Photoemission resonance and its quenching during destruction of the molecular structure of a C60 fullerite under synchrotron radiation. Physics of the Solid State. 46(12). 2311–2316. 2 indexed citations
19.
Mikoushkin, V. М., et al.. (2003). Ion beam fabrication of metal/insulator/HT-superconductor nanostructures for field effect transistor. Microelectronic Engineering. 69(2-4). 480–484. 1 indexed citations
20.
Shnitov, V. V., V. М. Mikoushkin, & Yu. S. Gordeev. (2003). Fullerite C60 as electron-beam resist for ‘dry’ nanolithography. Microelectronic Engineering. 69(2-4). 429–434. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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