Thong Q. Ngo

566 total citations
21 papers, 487 citations indexed

About

Thong Q. Ngo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Thong Q. Ngo has authored 21 papers receiving a total of 487 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Thong Q. Ngo's work include Electronic and Structural Properties of Oxides (17 papers), Semiconductor materials and devices (16 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). Thong Q. Ngo is often cited by papers focused on Electronic and Structural Properties of Oxides (17 papers), Semiconductor materials and devices (16 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). Thong Q. Ngo collaborates with scholars based in United States and Germany. Thong Q. Ngo's co-authors include John G. Ekerdt, Agham Posadas, Alexander A. Demkov, Martin D. McDaniel, David J. Smith, Edward T. Yu, Chengqing Hu, Sirong Lu, J. Bruley and Shen Hu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Thong Q. Ngo

19 papers receiving 482 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Thong Q. Ngo United States 13 434 375 117 32 21 21 487
R. Suriakarthick India 12 350 0.8× 313 0.8× 162 1.4× 34 1.1× 21 1.0× 20 446
Kim Ta United States 12 180 0.4× 273 0.7× 58 0.5× 17 0.5× 25 1.2× 16 381
В. И. Кушниренко Ukraine 10 359 0.8× 261 0.7× 148 1.3× 15 0.5× 25 1.2× 30 394
Chunyang Shi China 3 397 0.9× 226 0.6× 167 1.4× 27 0.8× 8 0.4× 5 414
M. Mozibur Rahman Bangladesh 13 490 1.1× 383 1.0× 89 0.8× 55 1.7× 22 1.0× 31 540
Boyang Zhao United States 9 261 0.6× 271 0.7× 66 0.6× 17 0.5× 18 0.9× 29 343
Guoyue Xu China 6 305 0.7× 212 0.6× 112 1.0× 30 0.9× 20 1.0× 12 360
M. K. R. Khan Bangladesh 12 412 0.9× 298 0.8× 92 0.8× 49 1.5× 19 0.9× 35 455
Dinesh Thapa United States 12 267 0.6× 136 0.4× 135 1.2× 44 1.4× 22 1.0× 23 330
Mohamed Zanouni Morocco 11 419 1.0× 312 0.8× 128 1.1× 18 0.6× 48 2.3× 42 502

Countries citing papers authored by Thong Q. Ngo

Since Specialization
Citations

This map shows the geographic impact of Thong Q. Ngo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Thong Q. Ngo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Thong Q. Ngo more than expected).

Fields of papers citing papers by Thong Q. Ngo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Thong Q. Ngo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Thong Q. Ngo. The network helps show where Thong Q. Ngo may publish in the future.

Co-authorship network of co-authors of Thong Q. Ngo

This figure shows the co-authorship network connecting the top 25 collaborators of Thong Q. Ngo. A scholar is included among the top collaborators of Thong Q. Ngo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Thong Q. Ngo. Thong Q. Ngo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Ngo, Thong Q., et al.. (2024). 300mm Wafer-scale ALD-grown MoS2 for Cu diffusion barrier. 1–3. 1 indexed citations
3.
4.
Zhang, Zizhuo, Brennan M. Coffey, Thong Q. Ngo, et al.. (2018). Atomic layer deposition of cobalt oxide on oxide substrates and low temperature reduction to form ultrathin cobalt metal films. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 37(1). 14 indexed citations
5.
Lu, Sirong, Kristy J. Kormondy, Thong Q. Ngo, et al.. (2016). Spectrum and phase mapping across the epitaxial γ-Al2O3/SrTiO3 interface. Applied Physics Letters. 108(5). 7 indexed citations
6.
McDaniel, Martin D., Thong Q. Ngo, Shen Hu, et al.. (2015). Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors. Applied Physics Reviews. 2(4). 73 indexed citations
7.
Kormondy, Kristy J., Agham Posadas, Thong Q. Ngo, et al.. (2015). Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO3 interface: Control of oxygen vacancies. Journal of Applied Physics. 117(9). 33 indexed citations
8.
Demkov, Alexander A., Patrick Ponath, Kurt Fredrickson, et al.. (2015). Integrated films of transition metal oxides for information technology. Microelectronic Engineering. 147. 285–289. 11 indexed citations
9.
Ngo, Thong Q., Nicholas Goble, Agham Posadas, et al.. (2015). Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition. Journal of Applied Physics. 118(11). 32 indexed citations
10.
McDaniel, Martin D., Thong Q. Ngo, Agham Posadas, et al.. (2014). A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors. Advanced Materials Interfaces. 1(8). 40 indexed citations
11.
McDaniel, Martin D., Thong Q. Ngo, Agham Posadas, et al.. (2014). Epitaxy: A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors (Adv. Mater. Interfaces 8/2014). Advanced Materials Interfaces. 1(8). 1 indexed citations
12.
McDaniel, Martin D., Agham Posadas, Thong Q. Ngo, et al.. (2014). Incorporation of La in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates. Journal of Applied Physics. 115(22). 17 indexed citations
13.
Ngo, Thong Q., Martin D. McDaniel, Agham Posadas, Alexander A. Demkov, & John G. Ekerdt. (2014). Growth of crystalline LaAlO3by atomic layer deposition. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8987. 898712–898712. 3 indexed citations
14.
Ngo, Thong Q., Agham Posadas, Martin D. McDaniel, et al.. (2014). Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition. Applied Physics Letters. 104(8). 62 indexed citations
15.
Hoang, Son, Thong Q. Ngo, Sean P. Berglund, et al.. (2013). Improvement of Solar Energy Conversion with Nb‐Incorporated TiO2 Hierarchical Microspheres. ChemPhysChem. 14(10). 2270–2276. 12 indexed citations
16.
Demkov, Alexander A., Agham Posadas, Hosung Seo, et al.. (2013). (Invited) Monolithic Integration of Oxides on Semiconductors. ECS Transactions. 54(1). 255–269. 16 indexed citations
17.
Ngo, Thong Q., Agham Posadas, Hosung Seo, et al.. (2013). Atomic layer deposition of photoactive CoO/SrTiO3 and CoO/TiO2 on Si(001) for visible light driven photoelectrochemical water oxidation. Journal of Applied Physics. 114(8). 28 indexed citations
18.
McDaniel, Martin D., Agham Posadas, Thong Q. Ngo, et al.. (2012). Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si(001) substrates. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 31(1). 46 indexed citations
19.
McDaniel, Martin D., Agham Posadas, Thong Q. Ngo, et al.. (2012). Growth of epitaxial oxides on silicon using atomic layer deposition: Crystallization and annealing of TiO2 on SrTiO3-buffered Si(001). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(4). 20 indexed citations
20.
Ngo, Thong Q., Agham Posadas, Martin D. McDaniel, et al.. (2012). Epitaxial growth of LaAlO3 on SrTiO3-buffered Si (001) substrates by atomic layer deposition. Journal of Crystal Growth. 363. 150–157. 28 indexed citations

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