Tae-Yon Lee

694 total citations
19 papers, 593 citations indexed

About

Tae-Yon Lee is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Tae-Yon Lee has authored 19 papers receiving a total of 593 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 7 papers in Biomedical Engineering. Recurrent topics in Tae-Yon Lee's work include Phase-change materials and chalcogenides (16 papers), Chalcogenide Semiconductor Thin Films (13 papers) and Nonlinear Optical Materials Studies (6 papers). Tae-Yon Lee is often cited by papers focused on Phase-change materials and chalcogenides (16 papers), Chalcogenide Semiconductor Thin Films (13 papers) and Nonlinear Optical Materials Studies (6 papers). Tae-Yon Lee collaborates with scholars based in South Korea and United States. Tae-Yon Lee's co-authors include Youn-Seon Kang, Ki‐Bum Kim, Yoonho Khang, Cheolkyu Kim, Hosun Lee, Kijoon H. P. Kim, Juarez L. F. Da Silva, Junwoo Park, Sung‐Wook Nam and Dongmin Kang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

Tae-Yon Lee

19 papers receiving 575 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tae-Yon Lee South Korea 12 471 468 143 127 124 19 593
Yoonho Khang South Korea 14 503 1.1× 471 1.0× 122 0.9× 107 0.8× 117 0.9× 37 606
S. C. Deane United Kingdom 22 894 1.9× 1.5k 3.2× 172 1.2× 29 0.2× 107 0.9× 46 1.6k
Ho-Kyu Kang South Korea 12 421 0.9× 639 1.4× 114 0.8× 95 0.7× 18 0.1× 35 722
S. A. Kostylev United States 9 425 0.9× 402 0.9× 49 0.3× 110 0.9× 113 0.9× 17 495
Xueqiong Su China 14 284 0.6× 368 0.8× 164 1.1× 95 0.7× 39 0.3× 52 647
Bas Ketelaars Netherlands 3 824 1.7× 768 1.6× 186 1.3× 202 1.6× 217 1.8× 5 946
Klaus Dimmler United States 7 279 0.6× 366 0.8× 224 1.6× 92 0.7× 146 1.2× 11 611
Yegang Lü China 17 724 1.5× 709 1.5× 157 1.1× 129 1.0× 197 1.6× 72 868
Petr Lazarenko Russia 13 332 0.7× 242 0.5× 124 0.9× 63 0.5× 48 0.4× 69 434
Yean-Kuen Fang Taiwan 13 223 0.5× 474 1.0× 85 0.6× 114 0.9× 14 0.1× 79 569

Countries citing papers authored by Tae-Yon Lee

Since Specialization
Citations

This map shows the geographic impact of Tae-Yon Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tae-Yon Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tae-Yon Lee more than expected).

Fields of papers citing papers by Tae-Yon Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tae-Yon Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tae-Yon Lee. The network helps show where Tae-Yon Lee may publish in the future.

Co-authorship network of co-authors of Tae-Yon Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Tae-Yon Lee. A scholar is included among the top collaborators of Tae-Yon Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tae-Yon Lee. Tae-Yon Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Lim, Seon‐Jeong, Dong‐Seok Leem, Kyung‐Bae Park, et al.. (2015). Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors. Scientific Reports. 5(1). 7708–7708. 102 indexed citations
2.
Lee, Tae-Yon, et al.. (2014). A Time-of-Flight 3-D Image Sensor With Concentric-Photogates Demodulation Pixels. IEEE Transactions on Electron Devices. 61(3). 870–877. 10 indexed citations
3.
Suh, Dongseok, Cheolkyu Kim, Kijoon H. P. Kim, et al.. (2010). Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices. Applied Physics Letters. 96(12). 42 indexed citations
4.
Kim, Cheolkyu, Dongmin Kang, Tae-Yon Lee, et al.. (2009). Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices. Applied Physics Letters. 94(19). 81 indexed citations
5.
Nam, Sung‐Wook, Minho Kwon, Dongmin Kang, et al.. (2009). Electric-Field-Induced Mass Movement of Ge[sub 2]Sb[sub 2]Te[sub 5] in Bottleneck Geometry Line Structures. Electrochemical and Solid-State Letters. 12(4). H155–H155. 27 indexed citations
7.
8.
Benayad, Anass, Youn-Seon Kang, Hyun‐Joon Shin, et al.. (2009). Electronic structure of (Ge2Sb2Te5)1−x(In3SbTe2)x investigated by x-ray photoelectron spectroscopy. Journal of Applied Physics. 106(4). 6 indexed citations
9.
Kang, Youn-Seon, Anass Benayad, Ki-Hong Kim, et al.. (2008). Effect of indium on phase-change characteristics and local chemical states of In–Ge–Sb–Te alloys. Applied Physics Letters. 93(2). 22 indexed citations
10.
Nam, Sung‐Wook, Cheolkyu Kim, Minho Kwon, et al.. (2008). Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing. Applied Physics Letters. 92(11). 35 indexed citations
11.
Lee, Tae-Yon, Cheolkyu Kim, Youn-Seon Kang, et al.. (2008). Rapid crystallization of GeTe–Bi2Te3 mixed layer. Applied Physics Letters. 92(10). 19 indexed citations
12.
Im, Jino, Changwon Park, Ki‐Min Park, et al.. (2008). Hierarchical structure and phase transition of(GeTe)n(Sb2Te3)mused for phase-change memory. Physical Review B. 78(20). 5 indexed citations
13.
Nam, Sung‐Wook, Tae-Yon Lee, Jung‐Sub Wi, et al.. (2007). Electron-Beam Lithography Patterning of Ge[sub 2]Sb[sub 2]Te[sub 5] Nanostructures Using Hydrogen Silsesquioxane and Amorphous Si Intermediate Layer. Journal of The Electrochemical Society. 154(9). H844–H844. 12 indexed citations
14.
Ahn, Dong-Ho, Tae-Yon Lee, Jung‐Sub Wi, et al.. (2007). High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 Complete Solid Solution. Japanese Journal of Applied Physics. 46(9R). 5719–5719. 4 indexed citations
15.
Lee, Dohyun, Wondong Kim, Chanyong Hwang, et al.. (2007). Valence band structures of the phase change material Ge2Sb2Te5. Applied Physics Letters. 91(25). 13 indexed citations
16.
Wi, Jung‐Sub, et al.. (2006). Electron-beam lithography of Co∕Pd multilayer with hydrogen silsesquioxane and amorphous Si intermediate layer. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(6). 2616–2620. 7 indexed citations
17.
Lee, Tae-Yon, et al.. (2006). Separate domain formation in Ge2Sb2Te5–SiOx mixed layer. Applied Physics Letters. 89(16). 35 indexed citations
18.
Lee, Tae-Yon, Ki‐Bum Kim, Byung‐ki Cheong, et al.. (2002). Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x. Applied Physics Letters. 80(18). 3313–3315. 36 indexed citations
19.
Lee, Tae-Yon, Byung‐ki Cheong, Taek Sung Lee, et al.. (2001). A Novel Approach to Obtain GeSbTe-Based High Speed Crystallizing Materials for Phase Change Optical Recording. MRS Proceedings. 674. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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