K. D. Moiseev

825 total citations
108 papers, 670 citations indexed

About

K. D. Moiseev is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, K. D. Moiseev has authored 108 papers receiving a total of 670 indexed citations (citations by other indexed papers that have themselves been cited), including 98 papers in Atomic and Molecular Physics, and Optics, 97 papers in Electrical and Electronic Engineering and 25 papers in Materials Chemistry. Recurrent topics in K. D. Moiseev's work include Semiconductor Quantum Structures and Devices (97 papers), Advanced Semiconductor Detectors and Materials (82 papers) and Chalcogenide Semiconductor Thin Films (18 papers). K. D. Moiseev is often cited by papers focused on Semiconductor Quantum Structures and Devices (97 papers), Advanced Semiconductor Detectors and Materials (82 papers) and Chalcogenide Semiconductor Thin Films (18 papers). K. D. Moiseev collaborates with scholars based in Russia, Czechia and Poland. K. D. Moiseev's co-authors include Yu. P. Yakovlev, M. P. Mikhaĭlova, A. V. Ankudinov, Н. А. Берт, E. Hulicius, T. Šimeček, A. N. Titkov, G. G. Zegrya, M. Motyka and A. Krier and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

K. D. Moiseev

104 papers receiving 647 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. D. Moiseev Russia 12 559 547 179 86 55 108 670
H. S. Djie United States 17 678 1.2× 716 1.3× 161 0.9× 77 0.9× 62 1.1× 74 807
M. P. Mikhaĭlova Russia 12 603 1.1× 622 1.1× 193 1.1× 97 1.1× 69 1.3× 116 750
Mitsuru Ekawa Japan 19 716 1.3× 1.2k 2.1× 171 1.0× 85 1.0× 29 0.5× 114 1.2k
J. F. Nützel Germany 12 499 0.9× 522 1.0× 338 1.9× 125 1.5× 46 0.8× 32 681
P. L. Souza Brazil 11 282 0.5× 300 0.5× 117 0.7× 91 1.1× 63 1.1× 90 461
B. Elman United States 16 767 1.4× 668 1.2× 164 0.9× 43 0.5× 70 1.3× 45 874
Robert F. Bedford United States 17 566 1.0× 743 1.4× 174 1.0× 97 1.1× 74 1.3× 72 899
M. Erdtmann United States 10 292 0.5× 413 0.8× 103 0.6× 89 1.0× 43 0.8× 38 467
G. Dehlinger Switzerland 13 444 0.8× 700 1.3× 198 1.1× 162 1.9× 137 2.5× 29 810
O. Hildebrand Germany 15 502 0.9× 494 0.9× 91 0.5× 34 0.4× 55 1.0× 35 664

Countries citing papers authored by K. D. Moiseev

Since Specialization
Citations

This map shows the geographic impact of K. D. Moiseev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. D. Moiseev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. D. Moiseev more than expected).

Fields of papers citing papers by K. D. Moiseev

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. D. Moiseev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. D. Moiseev. The network helps show where K. D. Moiseev may publish in the future.

Co-authorship network of co-authors of K. D. Moiseev

This figure shows the co-authorship network connecting the top 25 collaborators of K. D. Moiseev. A scholar is included among the top collaborators of K. D. Moiseev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. D. Moiseev. K. D. Moiseev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kudriavtsev, Yu., R. Asomoza, & K. D. Moiseev. (2023). Restoration of the original depth distribution from experimental SIMS profile using the depth resolution function in framework of RMR model. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 41(2).
2.
Moiseev, K. D., et al.. (2023). Long-Wavelength Luminescence of InSb Quantum Dots in Type II Broken-Gap Heterostructure. Electronics. 12(3). 609–609. 1 indexed citations
3.
Mynbaev, K. D., et al.. (2023). Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement. Semiconductors. 57(5). 263–267. 1 indexed citations
4.
Motyka, M., et al.. (2022). Photoluminescence Spectroscopy of the InAsSb-Based p-i-n Heterostructure. Materials. 15(4). 1419–1419. 4 indexed citations
5.
Moiseev, K. D., et al.. (2020). Forming a Type-II Heterojunction in the InAsSb/InAsSbP Semiconductor Structure. Physics of the Solid State. 62(11). 2039–2044. 6 indexed citations
6.
Moiseev, K. D., et al.. (2020). Long-Wavelength LEDs in the Atmospheric Transparency Window of 4.6–5.3 μm. Semiconductors. 54(2). 253–257. 5 indexed citations
7.
Moiseev, K. D., et al.. (2016). Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy. Semiconductors. 50(7). 976–979. 4 indexed citations
8.
Moiseev, K. D., et al.. (2010). Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature. Physics Procedia. 3(2). 1189–1193. 5 indexed citations
9.
Moiseev, K. D., et al.. (2010). Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7608. 76081R–76081R. 2 indexed citations
10.
Mikhaĭlova, M. P., et al.. (2007). Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system. Semiconductors. 41(2). 161–166. 10 indexed citations
11.
Moiseev, K. D., A. Krier, & Yu. P. Yakovlev. (2001). Interface photoluminescence in type II broken-gap P–Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. Journal of Applied Physics. 90(8). 3988–3992. 4 indexed citations
12.
Ivanov, S. V., В. А. Соловьев, K. D. Moiseev, et al.. (2001). Asymmetric Hybrid Al(Ga)SbAs/InAs/Cd(Mg)Se Heterostructures for Mid-IR LEDS and Lasers. MRS Proceedings. 692. 1 indexed citations
13.
14.
Moiseev, K. D., et al.. (2000). High-power mid-infrared lasers based on type-II heterostructures with asymmetric band offset confinement. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3947. 144–144. 5 indexed citations
15.
Moiseev, K. D., et al.. (1999). Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it. Semiconductors. 33(7). 719–725. 6 indexed citations
16.
Mikhaĭlova, M. P., et al.. (1998). Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions. Superlattices and Microstructures. 24(1). 105–110. 3 indexed citations
17.
Mikhaĭlova, M. P., et al.. (1997). Suppression of Auger recombination in the diode lasers based on type II InAsSb/InAsSbP and InAs/GaInAsSb heterostructures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3001. 356–356. 2 indexed citations
18.
Zegrya, G. G., et al.. (1997). Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures. Semiconductors. 31(10). 1046–1048. 2 indexed citations
19.
Mikhaĭlova, M. P., et al.. (1995). Observation of an electroluminescence of confined carriers at single p-GaInAsSb/ p-InAs type-II broken-gap heterojunctions. Semiconductors. 29(4). 357–361. 1 indexed citations
20.
Moiseev, K. D., et al.. (1993). Investigation of the structure of the conduction band of InAsSbP solid solutions. Semiconductors. 27(11). 978–984. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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