T. Hornos

524 total citations
15 papers, 441 citations indexed

About

T. Hornos is a scholar working on Electrical and Electronic Engineering, Ceramics and Composites and Materials Chemistry. According to data from OpenAlex, T. Hornos has authored 15 papers receiving a total of 441 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 3 papers in Ceramics and Composites and 3 papers in Materials Chemistry. Recurrent topics in T. Hornos's work include Silicon Carbide Semiconductor Technologies (13 papers), Semiconductor materials and devices (12 papers) and Silicon and Solar Cell Technologies (3 papers). T. Hornos is often cited by papers focused on Silicon Carbide Semiconductor Technologies (13 papers), Semiconductor materials and devices (12 papers) and Silicon and Solar Cell Technologies (3 papers). T. Hornos collaborates with scholars based in Hungary, Sweden and United States. T. Hornos's co-authors include Ádám Gali, B. G. Svensson, Péter Deák, Thomas Frauenheim, Krisztián Szász, Jan M. Knaup, Martijn Marsman, Erik Janzén, Nguyên Tiên Són and Tsunenobu Kimoto and has published in prestigious journals such as Applied Physics Letters, Physical Review B and Journal of Physics D Applied Physics.

In The Last Decade

T. Hornos

14 papers receiving 432 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T. Hornos Hungary	8	366	143	89	64	44	15	441
Shigeo Nakajima United States	13	326 0.9×	188 1.3×	94 1.1×	62 1.0×	31 0.7×	21	386
Hiroshi Yamada‐Kaneta Japan	10	285 0.8×	200 1.4×	148 1.7×	15 0.2×	17 0.4×	53	371
M. Maciaszek Poland	10	189 0.5×	274 1.9×	95 1.1×	17 0.3×	11 0.3×	30	362
S. V. Kurilchik Belarus	10	395 1.1×	188 1.3×	289 3.2×	36 0.6×	120 2.7×	33	449
Sun-Ghil Lee South Korea	7	181 0.5×	172 1.2×	103 1.2×	52 0.8×	5 0.1×	16	283
Masakazu Ohishi Japan	10	283 0.8×	266 1.9×	192 2.2×	25 0.4×	7 0.2×	54	372
I. V. Zhevstovskikh Russia	11	142 0.4×	240 1.7×	96 1.1×	110 1.7×	5 0.1×	58	317
Sophie Vernay Germany	12	256 0.7×	246 1.7×	172 1.9×	133 2.1×	24 0.5×	19	408
Victor V. Prokofiev Finland	12	224 0.6×	56 0.4×	269 3.0×	44 0.7×	26 0.6×	38	345
F. Pio Italy	11	253 0.7×	193 1.3×	48 0.5×	30 0.5×	83 1.9×	32	349

Countries citing papers authored by T. Hornos

Since Specialization

Citations

This map shows the geographic impact of T. Hornos's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Hornos with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Hornos more than expected).

Fields of papers citing papers by T. Hornos

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Hornos. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Hornos. The network helps show where T. Hornos may publish in the future.

Co-authorship network of co-authors of T. Hornos

This figure shows the co-authorship network connecting the top 25 collaborators of T. Hornos. A scholar is included among the top collaborators of T. Hornos based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Hornos. T. Hornos is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Szász, Krisztián, T. Hornos, Martijn Marsman, & Ádám Gali. (2013). Hyperfine coupling of point defects in semiconductors by hybrid density functional calculations: The role of core spin polarization. Physical Review B. 88(7). 86 indexed citations

Trinh, Xuan Thang, Krisztián Szász, T. Hornos, et al.. (2013). Negative-Ucarbon vacancy in 4H-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site. Physical Review B. 88(23). 42 indexed citations

Monakhov, Edouard V., T. Hornos, & B. G. Svensson. (2011). Silicon Carbide and Related Materials 2010. Trans Tech Publications Ltd. eBooks. 3 indexed citations

Hornos, T., Ádám Gali, & B. G. Svensson. (2011). Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional. Materials science forum. 679-680. 261–264. 94 indexed citations

Deák, Péter, et al.. (2008). The mechanism of defect creation and passivation at the SiC/SiO₂ interface. Journal of Physics D Applied Physics. 41(4). 49801–49801. 10 indexed citations

Hornos, T., Nguyên Tiên Són, Erik Janzén, & Ádám Gali. (2007). Theoretical study of small silicon clusters in4H−SiC. Physical Review B. 76(16). 15 indexed citations

Deák, Péter, et al.. (2007). The Mechanism of Interface State Passivation by NO. Materials science forum. 556-557. 541–544. 3 indexed citations

Gali, Ádám, T. Hornos, Michel Bockstedte, & Thomas Frauenheim. (2007). Point Defects and their Aggregation in Silicon Carbide. Materials science forum. 556-557. 439–444. 2 indexed citations

Gali, Ádám, T. Hornos, Nguyên Tiên Són, Erik Janzén, & W. J. Choyke. (2007). Ab initiosupercell calculations on aluminum-related defects in SiC. Physical Review B. 75(4). 21 indexed citations

10.

Deák, Péter, et al.. (2007). The mechanism of defect creation and passivation at the SiC/SiO₂interface. Journal of Physics D Applied Physics. 40(20). 6242–6253. 138 indexed citations

11.

Hornos, T., Ádám Gali, Nguyên Tiên Són, & Erik Janzén. (2007). A Theoretical Study on Aluminium-Related Defects in SiC. Materials science forum. 556-557. 445–448. 4 indexed citations

12.

Hornos, T., Ádám Gali, Robert P. Devaty, & W. J. Choyke. (2006). A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers. Materials science forum. 527-529. 605–608.

13.

Hornos, T., Ádám Gali, R. P. Devaty, & W. J. Choyke. (2005). Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study. Applied Physics Letters. 87(21). 2 indexed citations

14.

Gali, Ádám, T. Hornos, Péter Deák, et al.. (2005). Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects. Materials science forum. 483-485. 519–522. 5 indexed citations

15.

Gali, Ádám, T. Hornos, Péter Deák, et al.. (2005). Activation of shallow boron acceptor in C∕B coimplanted silicon carbide: A theoretical study. Applied Physics Letters. 86(10). 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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