H. McAdams

613 total citations
23 papers, 468 citations indexed

About

H. McAdams is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Hardware and Architecture. According to data from OpenAlex, H. McAdams has authored 23 papers receiving a total of 468 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 4 papers in Hardware and Architecture. Recurrent topics in H. McAdams's work include Semiconductor materials and devices (16 papers), Ferroelectric and Negative Capacitance Devices (13 papers) and Ferroelectric and Piezoelectric Materials (7 papers). H. McAdams is often cited by papers focused on Semiconductor materials and devices (16 papers), Ferroelectric and Negative Capacitance Devices (13 papers) and Ferroelectric and Piezoelectric Materials (7 papers). H. McAdams collaborates with scholars based in United States and Germany. H. McAdams's co-authors include Scott R. Summerfelt, J. Antonio Travieso-Rodríguez, Sudhanshu Khanna, T. S. Moise, K. Remack, Krishna Udayakumar, J. W. McPherson, S. Aggarwal, Glen R. Fox and F. G. Celii and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, Japanese Journal of Applied Physics and IEEE Transactions on Device and Materials Reliability.

In The Last Decade

H. McAdams

23 papers receiving 449 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. McAdams United States 10 415 189 75 69 26 23 468
Islam A. Salama United States 7 311 0.7× 75 0.4× 61 0.8× 70 1.0× 25 1.0× 24 409
S. Lipa United States 9 367 0.9× 122 0.6× 72 1.0× 81 1.2× 15 0.6× 29 497
O.S. Nakagawa United States 12 410 1.0× 60 0.3× 95 1.3× 126 1.8× 25 1.0× 36 484
Sukeshwar Kannan United States 12 328 0.8× 31 0.2× 78 1.0× 37 0.5× 25 1.0× 46 361
Woojin Ahn United States 10 290 0.7× 95 0.5× 57 0.8× 33 0.5× 60 2.3× 31 387
Young-Kwan Park South Korea 14 495 1.2× 70 0.4× 64 0.9× 92 1.3× 46 1.8× 55 552
C. Kothandaraman United States 12 416 1.0× 80 0.4× 90 1.2× 47 0.7× 33 1.3× 28 460
Dhanoop Varghese United States 17 1.3k 3.2× 171 0.9× 71 0.9× 38 0.6× 36 1.4× 52 1.4k
Yasser Sherazi Belgium 10 516 1.2× 35 0.2× 47 0.6× 86 1.2× 10 0.4× 26 549
Tahone Yang Taiwan 15 521 1.3× 94 0.5× 55 0.7× 81 1.2× 29 1.1× 89 607

Countries citing papers authored by H. McAdams

Since Specialization
Citations

This map shows the geographic impact of H. McAdams's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. McAdams with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. McAdams more than expected).

Fields of papers citing papers by H. McAdams

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. McAdams. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. McAdams. The network helps show where H. McAdams may publish in the future.

Co-authorship network of co-authors of H. McAdams

This figure shows the co-authorship network connecting the top 25 collaborators of H. McAdams. A scholar is included among the top collaborators of H. McAdams based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. McAdams. H. McAdams is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Udayakumar, Krishna, Tamer San, J. Antonio Travieso-Rodríguez, et al.. (2013). Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology. 128–131. 16 indexed citations
2.
3.
Khanna, Sudhanshu, et al.. (2013). Zero leakage microcontroller with 384ns wakeup time using FRAM mini-array architecture. 21–24. 4 indexed citations
4.
5.
Travieso-Rodríguez, J. Antonio, A. Venugopal, Michael Ball, et al.. (2013). 180nm FRAM reliability demonstration with ten years data retention at 125°C. MY.11.1–MY.11.5. 4 indexed citations
6.
Summerfelt, Scott R., et al.. (2008). Ferroelectric SPICE model, testing and fitting. 200. 1–1. 1 indexed citations
7.
Travieso-Rodríguez, J. Antonio, K. Remack, Krishna Udayakumar, et al.. (2008). Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS. 47. 1–2. 3 indexed citations
8.
Summerfelt, Scott R., T. S. Moise, Krishna Udayakumar, et al.. (2007). High-Density 8Mb 1T-1C Ferroelectric Random Access Memory Embedded Within a Low-Power 130nm Logic Process. 9–10. 17 indexed citations
9.
Udayakumar, Krishna, K. Remack, J. Antonio Travieso-Rodríguez, et al.. (2006). Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic. Japanese Journal of Applied Physics. 45(4S). 3202–3202. 14 indexed citations
10.
Waser, Rainer, et al.. (2005). A DYNAMIC REFERENCE SCHEME FOR NONVOLATILE FERROELECTRIC RAM. Integrated ferroelectrics. 72(1). 31–37. 2 indexed citations
11.
Summerfelt, Scott R., S. Aggarwal, F. G. Celii, et al.. (2005). Embedded ferroelectric memory using a 130-nm 5 metal layer Cu / FSG logic process. 153–154. 3 indexed citations
12.
McAdams, H., T. S. Moise, S. Natarajan, et al.. (2004). A 64 Mbit embedded FeRAM utilizing a 130 nm, 5LM Cu/FSG logic process. 175–176. 6 indexed citations
13.
McAdams, H., William F. Kraus, T. S. Moise, et al.. (2004). A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process. IEEE Journal of Solid-State Circuits. 39(4). 667–677. 94 indexed citations
14.
Travieso-Rodríguez, J. Antonio, K. Remack, Krishna Udayakumar, et al.. (2004). Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays. IEEE Transactions on Device and Materials Reliability. 4(3). 436–449. 97 indexed citations
15.
McAdams, H., et al.. (2002). A Novel Sense-Amplifier and Plate-Line Architecture for Ferroelectric Memories. Integrated ferroelectrics. 48(1). 109–118. 1 indexed citations
16.
McAdams, H., et al.. (2002). A Novel Sense-Amplifier and Plate-Line Architecture for Ferroelectric Memories. Integrated ferroelectrics. 48(1). 109–118. 5 indexed citations
17.
18.
Aur, S., C. Duvvury, H. McAdams, & C. Perrin. (1992). Identification of DRAM sense-amplifier imbalance using hot-carrier evaluation. IEEE Journal of Solid-State Circuits. 27(3). 451–453. 1 indexed citations
19.
Holland, Brian, et al.. (1986). A 1Mb CMOS DRAM with design-for-test functions. 264–265. 11 indexed citations
20.
McAdams, H., et al.. (1986). A 1-Mbit CMOS dynamic RAM with design-for test functions. IEEE Journal of Solid-State Circuits. 21(5). 635–642. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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