Shaofeng Yu

703 total citations
72 papers, 494 citations indexed

About

Shaofeng Yu is a scholar working on Electrical and Electronic Engineering, Astronomy and Astrophysics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Shaofeng Yu has authored 72 papers receiving a total of 494 indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Electrical and Electronic Engineering, 6 papers in Astronomy and Astrophysics and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Shaofeng Yu's work include Advancements in Semiconductor Devices and Circuit Design (40 papers), Semiconductor materials and devices (39 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). Shaofeng Yu is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (40 papers), Semiconductor materials and devices (39 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). Shaofeng Yu collaborates with scholars based in China, United States and Italy. Shaofeng Yu's co-authors include Eugene A. Fitzgerald, D.A. Antoniadis, Minjoo Larry Lee, Jongwan Jung, Xiaona Zhu, Jianping Wang, Ye Lü, Pengpeng Ren, Runsheng Wang and Tsu‐Jae King and has published in prestigious journals such as Applied Physics Letters, IEEE Access and IEEE Transactions on Electron Devices.

In The Last Decade

Shaofeng Yu

62 papers receiving 471 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shaofeng Yu China 13 440 62 62 48 32 72 494
I. Polishchuk United States 8 446 1.0× 48 0.8× 44 0.7× 68 1.4× 4 0.1× 17 472
C.R. Selvakumar Canada 11 323 0.7× 41 0.7× 106 1.7× 128 2.7× 33 1.0× 45 403
Juin J. Liou United States 10 518 1.2× 70 1.1× 49 0.8× 42 0.9× 16 0.5× 35 568
Tae Hwan Jang South Korea 13 447 1.0× 42 0.7× 45 0.7× 46 1.0× 7 0.2× 57 534
Chandan Kumar Pandey India 16 669 1.5× 209 3.4× 118 1.9× 57 1.2× 11 0.3× 70 756
Lei Shu China 11 223 0.5× 17 0.3× 87 1.4× 20 0.4× 22 0.7× 49 304
Amit Singh India 8 369 0.8× 30 0.5× 63 1.0× 11 0.2× 12 0.4× 29 437
G. Strobl Germany 12 403 0.9× 97 1.6× 96 1.5× 114 2.4× 65 2.0× 41 442
Y. Watanabe Japan 13 557 1.3× 78 1.3× 25 0.4× 61 1.3× 3 0.1× 54 606
Slimane Oussalah Algeria 11 264 0.6× 46 0.7× 124 2.0× 53 1.1× 11 0.3× 57 327

Countries citing papers authored by Shaofeng Yu

Since Specialization
Citations

This map shows the geographic impact of Shaofeng Yu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shaofeng Yu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shaofeng Yu more than expected).

Fields of papers citing papers by Shaofeng Yu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shaofeng Yu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shaofeng Yu. The network helps show where Shaofeng Yu may publish in the future.

Co-authorship network of co-authors of Shaofeng Yu

This figure shows the co-authorship network connecting the top 25 collaborators of Shaofeng Yu. A scholar is included among the top collaborators of Shaofeng Yu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shaofeng Yu. Shaofeng Yu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Yu, Shaofeng, et al.. (2025). Physics-Based Compact Modeling of Quantum Confinement and Quasi-Ballistic Transport in Ultra-Scaled GAAFETs. IEEE Transactions on Electron Devices. 72(4). 1560–1568. 1 indexed citations
3.
Shen, Lei, Xinghuo Yu, Xiaona Zhu, et al.. (2024). Atomic-Layer-Deposited Al2O3 Layer Inserted in SiO2/HfO2 Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device. ACS Applied Nano Materials. 7(24). 28496–28503. 3 indexed citations
4.
Zhu, Xiaona, et al.. (2024). Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network. Micromachines. 15(2). 218–218. 3 indexed citations
5.
Zhu, Xiaona, et al.. (2024). A Unified Mobility Model for Cryogenic Bulk Silicon Simulations in Wide Doping Range. IEEE Transactions on Electron Devices. 71(12). 7727–7733.
6.
Liu, Yang, Guodong Zhao, Ye Lü, et al.. (2023). A Novel Zigzag SRAM Bitcell Design in the Complementary FET Framework. IEEE Transactions on Electron Devices. 70(9). 4622–4627. 4 indexed citations
7.
Xu, Lijun, Jiangtao Liu, Xiaona Zhu, et al.. (2022). The Device and Circuit Level Benchmark of Si-Based Cold Source FETs for Future Logic Technology. IEEE Transactions on Electron Devices. 69(6). 3483–3489. 5 indexed citations
8.
Wu, Zhenhua, Huaxiang Yin, Tao Chen, et al.. (2021). Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs. IEEE Transactions on Electron Devices. 68(9). 4181–4188. 36 indexed citations
9.
Li, Yanli, et al.. (2021). HD SRAM bitcell size shrink beyond 7nm node by CFET without EUV. 1–4. 5 indexed citations
10.
Wang, Chenkun, Fei Lu, Qi Chen, et al.. (2017). Circuit-level ESD protection simulation using behavior models in 28nm CMOS. 1–4. 3 indexed citations
11.
12.
Ren, Pengpeng, Runsheng Wang, Zhigang Ji, et al.. (2014). New insights into the design for end-of-life variability of NBTI in scaled high-κ/metal-gate Technology for the nano-reliability era. Liverpool John Moores University. 34.1.1–34.1.4. 14 indexed citations
13.
Zou, Jibin, Runsheng Wang, Shaofeng Guo, et al.. (2014). New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits. 34.5.1–34.5.4. 12 indexed citations
14.
15.
Dong, Qing, Yanan Ma, Hao Chen, et al.. (2012). A novel method for accurate measurement and decoupling of SRAM standby leakage. 43. 1–3.
16.
He, Jinliang, Jinpeng Wu, Bo Zhang, & Shaofeng Yu. (2012). Field testing for observation of seasonal influence on grounding device at impulse condition. 18. 445–448. 2 indexed citations
17.
Li, Wei, Shaofeng Yu, Bo Zhang, Jinliang He, & Yong Huang. (2007). A Statistical Model of Noises at Input Port of Inverter and its Coupling to Low Voltage Cable on Fuel Cell Bus. 24. 1–5. 2 indexed citations
18.
Li, Wei, Shaofeng Yu, Bo Zhang, Jinliang He, & Yong Huang. (2006). High Frequency Conducted Disturbance Analysis of Driving System in Fuel Cell Vehicle. 724–727. 2 indexed citations
19.
Xiong, Wenjing, C. Rinn Cleavelin, R. Wise, et al.. (2005). Full/partial depletion effects in FinFETs. 195–197. 3 indexed citations
20.
Xie, Fei, Wenjiang Li, Jinlong He, et al.. (2004). Directly immobilize polycation bearing Os complexes on mesoporous material MAS-5 and its electrocatalytic activity for nitrite. Materials Chemistry and Physics. 86(2-3). 425–429. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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