Seung H. Kang

2.3k total citations
96 papers, 1.9k citations indexed

About

Seung H. Kang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Seung H. Kang has authored 96 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 48 papers in Atomic and Molecular Physics, and Optics and 32 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Seung H. Kang's work include Magnetic properties of thin films (46 papers), Semiconductor materials and devices (33 papers) and Ferroelectric and Negative Capacitance Devices (29 papers). Seung H. Kang is often cited by papers focused on Magnetic properties of thin films (46 papers), Semiconductor materials and devices (33 papers) and Ferroelectric and Negative Capacitance Devices (29 papers). Seung H. Kang collaborates with scholars based in United States, South Korea and United Kingdom. Seung H. Kang's co-authors include Seong‐Ook Jung, Kangho Lee, Taehui Na, Jung Pill Kim, Ji Su Kim, Kyungho Ryu, Jimmy J. Kan, Xiaochun Zhu, Chando Park and Yuan Xie and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Acta Materialia.

In The Last Decade

Seung H. Kang

94 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Seung H. Kang United States 26 1.5k 892 350 224 202 96 1.9k
A. Driskill-Smith United States 13 931 0.6× 903 1.0× 360 1.0× 310 1.4× 302 1.5× 21 1.5k
Xiaochun Zhu United States 14 736 0.5× 1.0k 1.1× 371 1.1× 175 0.8× 348 1.7× 25 1.5k
N. Kasai Japan 22 1.1k 0.8× 780 0.9× 287 0.8× 294 1.3× 94 0.5× 75 1.6k
V. Nikitin United States 16 1.1k 0.8× 1.4k 1.5× 475 1.4× 471 2.1× 296 1.5× 30 2.0k
H. Yoda Japan 23 987 0.7× 1.3k 1.4× 673 1.9× 374 1.7× 126 0.6× 96 1.7k
J. Janesky United States 13 977 0.7× 1.2k 1.4× 505 1.4× 334 1.5× 119 0.6× 25 1.6k
M. DeHerrera United States 14 1.1k 0.8× 1.4k 1.5× 504 1.4× 351 1.6× 130 0.6× 28 1.8k
D. K. Lottis United States 14 745 0.5× 1.1k 1.2× 553 1.6× 304 1.4× 274 1.4× 27 1.7k
S. Ikegawa Japan 15 718 0.5× 743 0.8× 449 1.3× 298 1.3× 79 0.4× 67 1.3k
A. V. Khvalkovskiy Russia 16 1.0k 0.7× 1.6k 1.8× 531 1.5× 332 1.5× 236 1.2× 20 2.1k

Countries citing papers authored by Seung H. Kang

Since Specialization
Citations

This map shows the geographic impact of Seung H. Kang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Seung H. Kang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Seung H. Kang more than expected).

Fields of papers citing papers by Seung H. Kang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Seung H. Kang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Seung H. Kang. The network helps show where Seung H. Kang may publish in the future.

Co-authorship network of co-authors of Seung H. Kang

This figure shows the co-authorship network connecting the top 25 collaborators of Seung H. Kang. A scholar is included among the top collaborators of Seung H. Kang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Seung H. Kang. Seung H. Kang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kang, Seung H., et al.. (2021). Environmental-Variation-Tolerant Magnetic Tunnel Junction-Based Physical Unclonable Function Cell With Auto Write-Back Technique. IEEE Transactions on Information Forensics and Security. 16. 2843–2853. 9 indexed citations
2.
Na, Taehui, et al.. (2019). Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27(11). 2548–2555. 15 indexed citations
3.
Wu, Bi, Yuanqing Cheng, Peiyuan Wang, et al.. (2018). An Adaptive 3T-3MTJ Memory Cell Design for STT-MRAM-Based LLCs. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26(3). 484–495. 16 indexed citations
4.
Kan, Jimmy J., Chando Park, Jaesoo Ahn, et al.. (2017). A Study on Practically Unlimited Endurance of STT-MRAM. IEEE Transactions on Electron Devices. 64(9). 3639–3646. 72 indexed citations
5.
Na, Taehui, et al.. (2016). Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS. IEEE Journal of Solid-State Circuits. 52(2). 496–504. 46 indexed citations
6.
Chi, Ping, et al.. (2016). Architecture design with STT-RAM: Opportunities and challenges. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 109–114. 30 indexed citations
7.
Kan, Jimmy J., M. Gottwald, Chando Park, Xiaochun Zhu, & Seung H. Kang. (2015). Thermally Robust Perpendicular STT-MRAM Free Layer Films Through Capping Layer Engineering. IEEE Transactions on Magnetics. 51(12). 1–5. 8 indexed citations
8.
Xu, Cong, et al.. (2015). Impact of Write Pulse and Process Variation on 22 nm FinFET-Based STT-RAM Design: A Device-Architecture Co-Optimization Approach. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 1(4). 195–206. 23 indexed citations
9.
Park, Chando, Jimmy J. Kan, Jin-Hyun Ahn, et al.. (2015). Systematic optimization of 1 Gbit perpendicular magnetic tunnel junction arrays for 28 nm embedded STT-MRAM and beyond. 26.2.1–26.2.4. 36 indexed citations
10.
Lee, Kangho, Jimmy J. Kan, & Seung H. Kang. (2014). Unified embedded non-volatile memory for emerging mobile markets. 131–136. 27 indexed citations
11.
Na, Taehui, et al.. (2013). A comparative study of STT-MTJ based non-volatile flip-flops. 109–112. 22 indexed citations
12.
Kim, Ji Su, Kyungho Ryu, Jung Pill Kim, Seung H. Kang, & Seong‐Ook Jung. (2013). STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 22(7). 1630–1634. 19 indexed citations
14.
Wen, Wujie, Mengjie Mao, Xiaochun Zhu, et al.. (2013). CD-ECC: Content-dependent error correction codes for combating asymmetric nonvolatile memory operation errors. 1–8. 35 indexed citations
15.
Xu, Cong, et al.. (2011). Device-architecture co-optimization of STT-RAM based memory for low power embedded systems. International Conference on Computer Aided Design. 463–470. 26 indexed citations
16.
Lee, Kangho, et al.. (2011). Perpendicular magnetization of CoFeB on single-crystal MgO. Journal of Applied Physics. 109(12). 29 indexed citations
17.
Wang, Peiyuan, Xiang Chen, Yiran Chen, et al.. (2011). A 1.0V 45nm nonvolatile magnetic latch design and its robustness analysis. 1–4. 11 indexed citations
18.
Kang, Seung H.. (2008). Recent advances in spintronics for emerging memory devices. JOM. 60(9). 28–33. 11 indexed citations
19.
Watanabe, Yoshimi, Seung H. Kang, J. W. Chan, et al.. (2001). Observation of magnetic gradients in stainless steel with a high-Tc superconducting quantum interference device microscope. Journal of Applied Physics. 89(3). 1977–1982. 8 indexed citations
20.
Kang, Seung H., et al.. (1996). Effect of post-pattern annealing on the grain structure and reliability of Al-based interconnects. Journal of Applied Physics. 79(11). 8330–8335. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026