S. Y. Siah

515 total citations
23 papers, 145 citations indexed

About

S. Y. Siah is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, S. Y. Siah has authored 23 papers receiving a total of 145 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 2 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in S. Y. Siah's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). S. Y. Siah is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). S. Y. Siah collaborates with scholars based in Singapore, United States and Germany. S. Y. Siah's co-authors include Simon Y.M. Chooi, K.F. Mok, Pak‐Hing Leung, L. Chan, W.S. Lau, W. S. Lau, C. H. Loh, Lap Chan, Bogyu Lim and Anders Yeo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Inorganic Chemistry.

In The Last Decade

S. Y. Siah

21 papers receiving 131 citations

Peers

Countries citing papers authored by S. Y. Siah

Since Specialization

Citations

This map shows the geographic impact of S. Y. Siah's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Y. Siah with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Y. Siah more than expected).

Fields of papers citing papers by S. Y. Siah

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Y. Siah. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Y. Siah. The network helps show where S. Y. Siah may publish in the future.

Co-authorship network of co-authors of S. Y. Siah

This figure shows the co-authorship network connecting the top 25 collaborators of S. Y. Siah. A scholar is included among the top collaborators of S. Y. Siah based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Y. Siah. S. Y. Siah is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Analysis of Extreme Pattern Density and Interconnects Routing Impacts on Via Open 2020 ·Yi Jiang, (unknown), (unknown), Weining Cheng, (unknown), (unknown), (unknown), (unknown), S. Y. Siah, (unknown)	1
2	Foundry TSV integration and manufacturing challenges 2014 ·(unknown), Wei Liu, (unknown), (unknown), (unknown), (unknown), (unknown), S. Y. Siah	3
3	Study of TDDB reliability in misaligned via chain structures 2012 ·(unknown), (unknown), (unknown), (unknown), (unknown), S. Y. Siah	7
4	The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current 2012 ·Microelectronics Reliability ·W.S. Lau, (unknown), S. Y. Siah, L. Chan	1
5	Wire bonding, bumping & assembly related failures & improvements 2011 ·(unknown), Shushan Yuan, (unknown), Anders Yeo, Hua Yao, (unknown), S. Y. Siah	1
6	Selection of gate length and gate bias to make nanoscale metal–oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation 2010 ·Solid-State Electronics ·(unknown), W. S. Lau, (unknown), (unknown), S. Y. Siah, L. Chan	0
7	Effects of switching from 〈110〉 to 〈100〉 channel orientation and tensile stress on n-channel and p-channel metal–oxide-semiconductor transistors 2010 ·Solid-State Electronics ·(unknown), W. S. Lau, (unknown), (unknown), S. Y. Siah, L. Chan	5
8	Mechanism for improvement of n-channel metal-oxide-semiconductor transistors by tensile stress 2010 ·Journal of Applied Physics ·(unknown), W.S. Lau, (unknown), (unknown), (unknown), (unknown), S. Y. Siah, L. Chan	6
9	Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors 2010 ·Microelectronics Reliability ·W.S. Lau, (unknown), (unknown), (unknown), (unknown), (unknown), S. Y. Siah, L. Chan	5
10	Improvement of subthreshold swing of n-channel transistor by uniaxial tensile stress due to a quantum mechanical mechanism instead of physical thinning 2009 ·Applied Physics Letters ·W.S. Lau, (unknown), (unknown), (unknown), S. Y. Siah, L. Chan	1
11	Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology 2008 ·W.S. Lau, (unknown), (unknown), Bogyu Lim, S. Y. Siah, L. Chan	1
12	Improvement of n-channel metal-oxide-semiconductor transistors by tensile stress despite increase in both on and subthreshold off currents 2008 ·Journal of Applied Physics ·(unknown), W. S. Lau, (unknown), (unknown), C. H. Loh, (unknown), (unknown), S. Y. Siah, L. Chan	4
13	Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100nm metal–oxide–semiconductor transistors 2008 ·Microelectronics Reliability ·W.S. Lau, (unknown), (unknown), (unknown), C. H. Loh, S. Y. Siah, L. Chan	3
14	Reduced boron lateral ion channeling in very short p-channel transistors by switching from ⟨110⟩ to ⟨100⟩ channel orientation 2008 ·Applied Physics Letters ·W. S. Lau, (unknown), (unknown), Bogyu Lim, S. Y. Siah, L. Chan	2
15	Region of nearly constant off current versus gate length characteristics for sub-0.1 μm low power CMOS technology 2008 ·W. S. Lau, (unknown), (unknown), (unknown), (unknown), S. Y. Siah, L. Chan	2
16	An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1μm metal–oxide–semiconductor transistors by quasi-ballistic transport theory 2008 ·Microelectronics Reliability ·W. S. Lau, (unknown), (unknown), (unknown), (unknown), S. Y. Siah, L. Chan	5
17	Effect of tensile stress on the various components of the off current of n-channel metal-oxide-semiconductor transistors 2007 ·Applied Physics Letters ·(unknown), W. S. Lau, (unknown), C. H. Loh, S. Y. Siah, L. Chan	2
18	A comparison between the quasi-ballistic transport model and the conventional velocity saturation model for sub-0.1-μm mos transistors 2007 ·(unknown), W.S. Lau, (unknown), C. H. Loh, S. Y. Siah, L. Chan	3
19	A study of the linearity between Ion and logIoff of modern MOS transistors and its application to stress engineering 2007 ·Microelectronics Reliability ·W.S. Lau, (unknown), (unknown), (unknown), C. H. Loh, S. Y. Siah, (unknown), L. Chan	9
20	Degradation of PMOS series resistance due to Si implantation for Ti-salicide process 1999 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown), S. Y. Siah, (unknown), (unknown), (unknown), (unknown), K. L. Pey	0

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact