S. Narushima

657 total citations
9 papers, 537 citations indexed

About

S. Narushima is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, S. Narushima has authored 9 papers receiving a total of 537 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Materials Chemistry, 5 papers in Electrical and Electronic Engineering and 2 papers in Condensed Matter Physics. Recurrent topics in S. Narushima's work include ZnO doping and properties (7 papers), Quantum Dots Synthesis And Properties (3 papers) and Phase-change materials and chalcogenides (3 papers). S. Narushima is often cited by papers focused on ZnO doping and properties (7 papers), Quantum Dots Synthesis And Properties (3 papers) and Phase-change materials and chalcogenides (3 papers). S. Narushima collaborates with scholars based in Japan. S. Narushima's co-authors include Masahiro Hirano, Hiromichi Ohta, Hideo Hosono, Toshio Kamiya, Hiroshi Mizoguchi, Masahiro Orita, Ken‐ichi Shimizu, H. Hosono, Kazushige Ueda and K. Shimakawa and has published in prestigious journals such as Advanced Materials, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

S. Narushima

9 papers receiving 531 citations

Peers

S. Narushima

MC

EEE

EOMM

PP

CMP

Yingge Yang China

Chandrahas Bharti India

Mustapha Rouchdi Morocco

P. S. Sahoo India

Erik Østreng Norway

R. Boughalmi Tunisia

Yong Hun Kwon South Korea

Kazuyoshi Inoue Japan

Bo Xiao China

Giwoong Nam South Korea

Yingge Yang China

S. Narushima

414 ×0.8

MC

321 ×0.9

EEE

149 ×1.1

EOMM

90 ×1.0

PP

102 ×2.2

CMP

Citations per year, relative to S. Narushima S. Narushima (= 1×) peers Yingge Yang

Countries citing papers authored by S. Narushima

Since Specialization

Citations

This map shows the geographic impact of S. Narushima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Narushima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Narushima more than expected).

Fields of papers citing papers by S. Narushima

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Narushima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Narushima. The network helps show where S. Narushima may publish in the future.

Co-authorship network of co-authors of S. Narushima

This figure shows the co-authorship network connecting the top 25 collaborators of S. Narushima. A scholar is included among the top collaborators of S. Narushima based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Narushima. S. Narushima is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

9 of 9 papers shown

1.

Kamiya, Toshio, S. Narushima, Hiroshi Mizoguchi, et al.. (2005). Electrical Properties and Structure of p‐Type Amorphous Oxide Semiconductor xZnO·Rh₂O₃. Advanced Functional Materials. 15(6). 968–974. 54 indexed citations

2.

Narushima, S., Kazushige Ueda, Ken‐ichi Shimizu, et al.. (2004). Electrical properties and local structure ofn-type conducting amorphous indium sulphide. Philosophical Magazine Letters. 84(10). 665–671. 8 indexed citations

3.

Narushima, S., Hiroshi Mizoguchi, Ken‐ichi Shimizu, et al.. (2003). A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes. Advanced Materials. 15(17). 1409–1413. 132 indexed citations

4.

Ohta, Hiromichi, Hiroshi Mizoguchi, Masahiro Hirano, et al.. (2003). Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO. Applied Physics Letters. 82(5). 823–825. 107 indexed citations

5.

Narushima, S., Masahiro Orita, Masahiro Hirano, & Hideo Hosono. (2002). Electronic structure and transport properties in the transparent amorphous oxide semiconductor2CdO⋅GeO2. Physical review. B, Condensed matter. 66(3). 68 indexed citations

6.

Orita, Masahiro, Hiromichi Ohta, Masahiro Hirano, S. Narushima, & Hideo Hosono. (2001). Amorphous transparent conductive oxide InGaO₃(ZnO)_m (m≤ 4): a Zn4s conductor. Philosophical Magazine B. 81(5). 501–515. 113 indexed citations

7.

Orita, Masahiro, Hiromichi Ohta, Masahiko Hirano, S. Narushima, & H. Hosono. (2001). Amorphous transparent conductive oxide InGaO3(ZnO)m (m≤ 4): a Zn4s conductor. Philosophical Magazine B. 81(5). 501–515. 3 indexed citations

8.

Narushima, S., et al.. (2000). Electronic transport and optical properties of proton-implanted amorphous 2CdO·GeO2 films. Journal of Non-Crystalline Solids. 274(1-3). 313–318. 21 indexed citations

9.

Shimakawa, K., et al.. (1999). Electronic transport in degenerate amorphous oxide semiconductors. Philosophical Magazine Letters. 79(9). 755–761. 31 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact