Yingge Yang

555 total citations
18 papers, 482 citations indexed

About

Yingge Yang is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Yingge Yang has authored 18 papers receiving a total of 482 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Materials Chemistry, 11 papers in Electrical and Electronic Engineering and 8 papers in Condensed Matter Physics. Recurrent topics in Yingge Yang's work include ZnO doping and properties (15 papers), Gas Sensing Nanomaterials and Sensors (8 papers) and GaN-based semiconductor devices and materials (8 papers). Yingge Yang is often cited by papers focused on ZnO doping and properties (15 papers), Gas Sensing Nanomaterials and Sensors (8 papers) and GaN-based semiconductor devices and materials (8 papers). Yingge Yang collaborates with scholars based in China and Japan. Yingge Yang's co-authors include Xiaotao Hao, Honglei Ma, Jin Ma, Deheng Zhang, Jie Huang, Chuanfu Cheng, Tianlin Yang, Xiangang Xu, Huizhao Zhuang and Chengshan Xue and has published in prestigious journals such as Chemical Physics Letters, Applied Surface Science and Thin Solid Films.

In The Last Decade

Yingge Yang

18 papers receiving 466 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yingge Yang China 11 414 321 149 102 90 18 482
Min-Su Yi South Korea 12 356 0.9× 335 1.0× 158 1.1× 117 1.1× 70 0.8× 22 520
Binzhong Dong United States 9 452 1.1× 325 1.0× 217 1.5× 95 0.9× 52 0.6× 17 537
J.Q. Hu Japan 8 363 0.9× 260 0.8× 113 0.8× 97 1.0× 50 0.6× 9 462
Ashok B. Bhise India 9 370 0.9× 253 0.8× 117 0.8× 30 0.3× 68 0.8× 12 426
Toshikazu Kakumu Japan 12 787 1.9× 726 2.3× 174 1.2× 53 0.5× 183 2.0× 14 878
S. J. Park South Korea 9 584 1.4× 386 1.2× 284 1.9× 70 0.7× 33 0.4× 10 624
A. Visinoiu Germany 9 418 1.0× 215 0.7× 198 1.3× 56 0.5× 52 0.6× 13 520
Mengni Xue China 8 362 0.9× 393 1.2× 184 1.2× 50 0.5× 74 0.8× 9 476
Y.S. No South Korea 10 320 0.8× 289 0.9× 106 0.7× 25 0.2× 37 0.4× 35 400
Byung Oh Jung South Korea 11 367 0.9× 195 0.6× 250 1.7× 236 2.3× 48 0.5× 18 469

Countries citing papers authored by Yingge Yang

Since Specialization
Citations

This map shows the geographic impact of Yingge Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yingge Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yingge Yang more than expected).

Fields of papers citing papers by Yingge Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yingge Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yingge Yang. The network helps show where Yingge Yang may publish in the future.

Co-authorship network of co-authors of Yingge Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Yingge Yang. A scholar is included among the top collaborators of Yingge Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yingge Yang. Yingge Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Zeng, Dongmei, Wanqi Jie, Hai Zhou, & Yingge Yang. (2011). Effect of sputtering power on the properties of Cd1−xZnxTe films deposited by radio frequency magnetron sputtering. Thin Solid Films. 519(13). 4158–4161. 13 indexed citations
2.
Zeng, Dongmei, Wanqi Jie, Hai Zhou, & Yingge Yang. (2009). Effects of deposition temperatures on structure and physical properties of Cd1−Zn Te films prepared by RF magnetron sputtering. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 614(1). 68–71. 9 indexed citations
3.
Wu, Run, Yingge Yang, Zhanghan Wu, et al.. (2005). Fractal dimension and photoluminescence of ZnO tetrapod nanowhiskers. Chemical Physics Letters. 406(4-6). 457–461. 42 indexed citations
4.
Yang, Yingge, et al.. (2004). Optical and electrical properties of polycrystalline GaN films prepared by post-nitridation technique. Physica B Condensed Matter. 352(1-4). 1–4. 5 indexed citations
5.
Ma, Honglei, Yingge Yang, Jin Ma, & Xiaomei Liu. (2004). Excitation energy dependence of photoluminescence in polycrystalline GaN films by post-nitridation technique. Diamond and Related Materials. 13(10). 1892–1894. 3 indexed citations
6.
Yu, Ke, Ziqiang Zhu, Yong-Sheng Zhang, et al.. (2004). Field emission from GaN nanobelts with herringbone morphology. Materials Letters. 58(22-23). 2893–2896. 39 indexed citations
7.
Ma, Jin, et al.. (2003). Comparison of the electrical and optical properties for SnO2:Sb films deposited on polyimide and glass substrates. Applied Surface Science. 214(1-4). 208–213. 43 indexed citations
8.
Yang, Yingge, et al.. (2003). Preparation and properties of GaN nanostructures by post-nitridation technique. Physica B Condensed Matter. 334(3-4). 287–291. 9 indexed citations
9.
Ma, Honglei, Yingge Yang, Chengshan Xue, et al.. (2003). Structure and luminescence of GaN films by sputtering post-annealing-reaction technique. Diamond and Related Materials. 12(8). 1402–1405. 3 indexed citations
10.
Hao, Xiaotao, Jin Ma, Deheng Zhang, et al.. (2002). Electrical and optical properties of SnO2:Sb films prepared on polyimide substrate by r.f. bias sputtering. Applied Surface Science. 189(1-2). 157–161. 16 indexed citations
11.
Yang, Yingge, Honglei Ma, Chengshan Xue, et al.. (2002). Preparation and structural properties for GaN films grown on Si (1 1 1) by annealing. Applied Surface Science. 193(1-4). 254–260. 42 indexed citations
12.
Yang, Yingge, Honglei Ma, Chengshan Xue, et al.. (2002). Investigation of preparation and characterization of GaN films on sapphire (0001) substrates. Applied Surface Science. 202(3-4). 295–300. 3 indexed citations
13.
Ma, Jin, Xiaotao Hao, Honglei Ma, et al.. (2002). RF magnetron sputtering SnO2: Sb films deposited on organic substrates. Solid State Communications. 121(6-7). 345–349. 16 indexed citations
14.
Ma, Honglei, Xiaotao Hao, Jin Ma, et al.. (2002). Bias voltage dependence of properties for ZnO:Al films deposited on flexible substrate. Surface and Coatings Technology. 161(1). 58–61. 31 indexed citations
15.
Hao, Xiaotao, Jin Ma, Deheng Zhang, et al.. (2002). Comparison of the properties for ZnO:Al films deposited on polyimide and glass substrates. Materials Science and Engineering B. 90(1-2). 50–54. 34 indexed citations
16.
Ma, Honglei, Xiaotao Hao, Jin Ma, et al.. (2002). Thickness dependence of properties of SnO2:Sb films deposited on flexible substrates. Applied Surface Science. 191(1-4). 313–318. 38 indexed citations
17.
Yang, Yingge, Honglei Ma, Chengshan Xue, et al.. (2002). Characterization of GaN films grown on silicon (111) substrates. Physica B Condensed Matter. 325. 230–234. 9 indexed citations
18.
Hao, Xiaotao, Jin Ma, Deheng Zhang, et al.. (2001). Thickness dependence of structural, optical and electrical properties of ZnO:Al films prepared on flexible substrates. Applied Surface Science. 183(1-2). 137–142. 127 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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