С. Н. Аболмасов

438 total citations
40 papers, 338 citations indexed

About

С. Н. Аболмасов is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Aerospace Engineering. According to data from OpenAlex, С. Н. Аболмасов has authored 40 papers receiving a total of 338 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 5 papers in Aerospace Engineering. Recurrent topics in С. Н. Аболмасов's work include Thin-Film Transistor Technologies (20 papers), Silicon and Solar Cell Technologies (19 papers) and Plasma Diagnostics and Applications (13 papers). С. Н. Аболмасов is often cited by papers focused on Thin-Film Transistor Technologies (20 papers), Silicon and Solar Cell Technologies (19 papers) and Plasma Diagnostics and Applications (13 papers). С. Н. Аболмасов collaborates with scholars based in Russia, France and Japan. С. Н. Аболмасов's co-authors include Pere Roca i Cabarrocas, Tatsuru Shirafuji, Kunihide Tachibana, Seiji Samukawa, А. Абрамов, Brett Hallam, Matthew Wright, P. Roca i Cabarrocas, Anastasia Soeriyadi and Е. И. Теруков and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

In The Last Decade

С. Н. Аболмасов

39 papers receiving 326 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
С. Н. Аболмасов Russia 10 303 96 79 46 45 40 338
E. Pawelec Poland 9 138 0.5× 78 0.8× 99 1.3× 89 1.9× 73 1.6× 50 314
Yang Feng China 8 129 0.4× 65 0.7× 90 1.1× 13 0.3× 30 0.7× 27 241
R. Boswell Australia 10 520 1.7× 68 0.7× 86 1.1× 93 2.0× 265 5.9× 18 561
А. С. Мустафаев Russia 11 264 0.9× 56 0.6× 184 2.3× 89 1.9× 121 2.7× 79 358
Brian Stoltzfus United States 9 163 0.5× 76 0.8× 97 1.2× 20 0.4× 15 0.3× 36 293
A. Schwabedissen Germany 11 333 1.1× 128 1.3× 73 0.9× 175 3.8× 113 2.5× 24 413
Zhong-Ling Dai China 13 444 1.5× 86 0.9× 107 1.4× 207 4.5× 103 2.3× 41 480
Taisei Motomura Japan 10 248 0.8× 59 0.6× 72 0.9× 76 1.7× 20 0.4× 43 328
Ian Swindells United Kingdom 8 146 0.5× 53 0.6× 25 0.3× 73 1.6× 18 0.4× 12 182
Madhusudhan Kundrapu United States 9 174 0.6× 158 1.6× 68 0.9× 41 0.9× 31 0.7× 30 342

Countries citing papers authored by С. Н. Аболмасов

Since Specialization
Citations

This map shows the geographic impact of С. Н. Аболмасов's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by С. Н. Аболмасов with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites С. Н. Аболмасов more than expected).

Fields of papers citing papers by С. Н. Аболмасов

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by С. Н. Аболмасов. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by С. Н. Аболмасов. The network helps show where С. Н. Аболмасов may publish in the future.

Co-authorship network of co-authors of С. Н. Аболмасов

This figure shows the co-authorship network connecting the top 25 collaborators of С. Н. Аболмасов. A scholar is included among the top collaborators of С. Н. Аболмасов based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with С. Н. Аболмасов. С. Н. Аболмасов is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Аболмасов, С. Н., et al.. (2023). Formation of a Copper Contact Grid on the Surface of Silicon Heterojunction Solar Cells. Semiconductors. 57(10). 431–439. 3 indexed citations
2.
Аболмасов, С. Н., et al.. (2023). Studies of Degradation Silicon Heterojunction Solar Cells by 1 MeV Electrons Irradiation. Applied Solar Energy. 59(5). 604–611. 2 indexed citations
3.
Andrianov, A. V., et al.. (2022). Generation of Terahertz Radiation under the Femtosecond Laser Excitation of a Multilayer Structure Based on a-Si:H/a-SiC:H/c-Si. Journal of Experimental and Theoretical Physics Letters. 116(12). 859–862. 1 indexed citations
4.
Wright, Matthew, Anastasia Soeriyadi, Moonyong Kim, et al.. (2022). On the kinetics of high intensity illuminated annealing of n-type SHJ solar cells: 0.4%abs efficiency gain in one second. Solar Energy Materials and Solar Cells. 248. 112039–112039. 5 indexed citations
5.
Wright, Matthew, Anastasia Soeriyadi, Daniel Chen, et al.. (2022). Silicon Heterojunction Solar Cells and p‐type Crystalline Silicon Wafers: A Historical Perspective. Solar RRL. 6(10). 9 indexed citations
6.
Wright, Matthew, et al.. (2021). High-Intensity Illuminated Annealing of Industrial SHJ Solar Cells: A Pilot Study. IEEE Journal of Photovoltaics. 12(1). 267–273. 20 indexed citations
7.
Аболмасов, С. Н., et al.. (2019). Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass. Semiconductors. 53(8). 1114–1119. 4 indexed citations
8.
Аболмасов, С. Н., А. Абрамов, E. I. Terukov, et al.. (2017). Heterojunction solar cells based on single-crystal silicon with an inkjet-printed contact grid. Technical Physics Letters. 43(1). 78–80. 5 indexed citations
9.
Аболмасов, С. Н., et al.. (2016). In situ photoluminescence study of plasma-induced damage at the a-Si:H/c-Si interface. Applied Physics Letters. 108(5). 17 indexed citations
10.
Аболмасов, С. Н. & Pere Roca i Cabarrocas. (2014). In situ photoluminescence system for studying surface passivation in silicon heterojunction solar cells. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 33(2). 7 indexed citations
11.
Аболмасов, С. Н.. (2012). Physics and engineering of crossed-field discharge devices. Plasma Sources Science and Technology. 21(3). 35006–35006. 60 indexed citations
12.
Wang, Junzhuan, et al.. (2012). Strong visible and near-infrared electroluminescence and formation process in Si-rich polymorphous silicon carbon. Journal of Applied Physics. 111(5). 4 indexed citations
13.
Аболмасов, С. Н., Kunihide Tachibana, & Tatsuru Shirafuji. (2011). Mechanisms of Pattern Formation in Dielectric Barrier Discharges. IEEE Transactions on Plasma Science. 39(11). 2090–2091. 20 indexed citations
14.
Аболмасов, С. Н., et al.. (2007). Theory of instabilities in crossed-field discharges at low pressures. Physics of Plasmas. 14(9). 6 indexed citations
15.
Аболмасов, С. Н. & Seiji Samukawa. (2007). Cold-cathode Penning discharge-based ionizer for detection of hyperthermal neutral beams. Review of Scientific Instruments. 78(7). 73302–73302. 8 indexed citations
16.
Аболмасов, С. Н., et al.. (2006). Spatiotemporal Surface Charge Measurement in Two Types of Dielectric Barrier Discharges Using Pockels Effect. Japanese Journal of Applied Physics. 45(10S). 8255–8255. 7 indexed citations
17.
Аболмасов, С. Н., et al.. (2005). On the magnetic field profile in a high-power planar magnetron discharge. IEEE Transactions on Plasma Science. 33(4). 1447–1449. 3 indexed citations
18.
Аболмасов, С. Н., Tatsuru Shirafuji, & Kunihide Tachibana. (2005). Submillimeter dielectric barrier discharges at atmospheric pressure: edge effect. IEEE Transactions on Plasma Science. 33(2). 941–948. 18 indexed citations
19.
Аболмасов, С. Н., et al.. (2002). Low-Energy Penning Ionization Gauge Type Ion Source Assisted by RF Magnetron Discharge. Japanese Journal of Applied Physics. 41(Part 1, No. 8). 5415–5418. 3 indexed citations
20.
Аболмасов, С. Н., et al.. (2000). Ion beam formation in the field of double layer stabilized by spatial reversal of magnetic field. Plasma devices and operations. 8(3). 147–166. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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