S. J. Magorrian

904 citations

18 papers · 678 indexed · h-index 12

Co-authors: Vladimir I. Fal’ko Viktor Zólyomi V. V. Enaldiev Celal Yelgel Andrew Wells F. Ferreira Andrés M. Mier Valdivia Trond I. Andersen
Topics: 2D Materials and Applications (15 papers)Perovskite Materials and Applications (12 papers)Chalcogenide Semiconductor Thin Films (10 papers)
Cited by: Materials Chemistry Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: Physical Review Letters Applied Physics Letters Nature Nanotechnology
Partner nations: United Kingdom Russia United States

In The Last Decade

S. J. Magorrian

17 papers receiving 671 citations

Peers

Countries citing papers authored by S. J. Magorrian

Since Specialization

Citations

This map shows the geographic impact of S. J. Magorrian's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. J. Magorrian with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. J. Magorrian more than expected).

Fields of papers citing papers by S. J. Magorrian

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. J. Magorrian. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. J. Magorrian. The network helps show where S. J. Magorrian may publish in the future.

Co-authorship network of co-authors of S. J. Magorrian

This figure shows the co-authorship network connecting the top 25 collaborators of S. J. Magorrian. A scholar is included among the top collaborators of S. J. Magorrian based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. J. Magorrian. S. J. Magorrian is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

#	Work	Indexed citations
1	Understanding domain reconstruction of twisted transition metal dichalcogenide bilayers through machine learned interatomic potentials 2025 ·2D Materials ·(unknown),Chaoliang Xu,S. J. Magorrian,Nicholas D. M. Hine	1
2	Electronic structure of the interface between Au and WSe₂ 2025 ·2D Materials ·(unknown),S. J. Magorrian,Matthew D. Watson,(unknown),Marc Walker,Céphise Cacho,Neil R. Wilson,Nicholas D. M. Hine	0
3	Band alignment and interlayer hybridisation in transition metal dichalcogenide/hexagonal boron nitride heterostructures 2022 ·2D Materials ·S. J. Magorrian,Abigail Graham,(unknown),F. Ferreira,Paul Nguyen,(unknown),Vladimir I. Fal’ko,Neil R. Wilson,Nicholas D. M. Hine	10
4	Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures 2021 ·IRIS Research product catalog (Sapienza University of Rome) ·Abigail Graham,Johanna Zultak,Matthew J. Hamer,Viktor Zólyomi,S. J. Magorrian,Alexei Barinov,Viktor Kandyba,Alessio Giampietri,Andrea Locatelli,Francesca Genuzio,(unknown),(unknown),Nicholas D. M. Hine,Vladimir I. Fal’ko,Roman Gorbachev,Neil R. Wilson	14
5	Band energy landscapes in twisted homobilayers of transition metal dichalcogenides 2021 ·Applied Physics Letters ·F. Ferreira,S. J. Magorrian,V. V. Enaldiev,David A. Ruiz‐Tijerina,Vladimir I. Fal’ko	19
6	Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors 2021 ·Scientific Reports ·F. Ferreira,V. V. Enaldiev,Vladimir I. Fal’ko,S. J. Magorrian	31
7	Structures of bulk hexagonal post transition metal chalcogenides from dispersion-corrected density functional theory 2021 ·Physical review. B. ·S. J. Magorrian,Viktor Zólyomi,N. D. Drummond	12
8	Tunable spin-orbit coupling in two-dimensional InSe 2021 ·Physical review. B. ·(unknown),S. J. Magorrian,Viktor Zólyomi,D. A. Bandurin,A. K. Geǐm,A. Patanè,Z. D. Kovalyuk,Z. R. Kudrynskyi,I. V. Grigorieva,Vladimir I. Fal’ko	11
9	Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe2/MoSe2 bilayers 2020 ·Nature Nanotechnology ·Jiho Sung,You Zhou,Giovanni Scuri,Viktor Zólyomi,Trond I. Andersen,Hyobin Yoo,Dominik S. Wild,Andrew Y. Joe,Ryan J. Gelly,Hoseok Heo,S. J. Magorrian,Damien Bérubé,Andrés M. Mier Valdivia,Takashi Taniguchi,Kenji Watanabe,Mikhail D. Lukin,Philip Kim,Vladimir I. Fal’ko,Hongkun Park	136
10	Stacking Domains and Dislocation Networks in Marginally Twisted Bilayers of Transition Metal Dichalcogenides 2020 ·Physical Review Letters ·V. V. Enaldiev,Viktor Zólyomi,Celal Yelgel,S. J. Magorrian,Vladimir I. Fal’ko	122
11	Crossover from weakly indirect to direct excitons in atomically thin films of InSe 2020 ·Physical review. B. ·(unknown),(unknown),S. J. Magorrian,Viktor Zólyomi,Vladimir I. Fal’ko	8
12	Hybrid k·p tight-binding model for intersubband optics in atomically thin InSe films 2018 ·Physical review. B. ·S. J. Magorrian,(unknown),Viktor Zólyomi,Vladimir I. Fal’ko	14
13	Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures 2018 ·2D Materials ·Daniel Terry,Viktor Zólyomi,Matthew J. Hamer,Anastasia V. Tyurnina,David G. Hopkinson,Alexander Rakowski,S. J. Magorrian,Nick Clark,Yu. М. Andreev,Olga Kazakova,Kostya S. Novoselov,Sarah J. Haigh,Vladimir I. Fal’ko,Roman Gorbachev	56
14	Valence band inversion and spin-orbit effects in the electronic structure of monolayer GaSe 2018 ·Physical review. B. ·Zeineb Ben Aziza,Viktor Zólyomi,Hugo Henck,Debora Pierucci,Mathieu G. Silly,J. Ávila,S. J. Magorrian,Julien Chaste,Kai Chen,Mina Yoon,Kai Xiao,Fausto Sirotti,M. C. Asensio,Emmanuel Lhuillier,M. Eddrief,Vladimir I. Fal’ko,Abdelkarim Ouerghi	57
15	Spin-orbit coupling, optical transitions, and spin pumping in monolayer and few-layer InSe 2017 ·Physical review. B. ·S. J. Magorrian,Viktor Zólyomi,Vladimir I. Fal’ko	37
16	Turbulent plumes from a glacier terminus melting in a stratified ocean 2016 ·Journal of Geophysical Research Oceans ·S. J. Magorrian,Andrew Wells	38
17	Polarization memory in the nonpolar magnetic ground state of multiferroicCuFeO2 2016 ·Physical review. B. ·James Beilsten‐Edmands,S. J. Magorrian,Francesca R. Foronda,D. Prabhakaran,P. G. Radaelli,Roger D. Johnson	10
18	Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model 2016 ·Physical review. B. ·S. J. Magorrian,Viktor Zólyomi,Vladimir I. Fal’ko	102

About S. J. Magorrian

S. J. Magorrian is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 18 papers that have together received 678 indexed citations. Recurring topics across this work include 2D Materials and Applications (15 papers), Perovskite Materials and Applications (12 papers) and Chalcogenide Semiconductor Thin Films (10 papers). The work is most often cited by research in Materials Chemistry (601 citations), Electrical and Electronic Engineering (353 citations) and Electronic, Optical and Magnetic Materials (73 citations). S. J. Magorrian has collaborated with scholars based in United Kingdom, Russia and United States. Frequent co-authors include Vladimir I. Fal’ko, Viktor Zólyomi, V. V. Enaldiev, Celal Yelgel, Andrew Wells, F. Ferreira, Andrés M. Mier Valdivia, Trond I. Andersen, Jiho Sung and Ryan J. Gelly. Their work appears in journals such as Physical Review Letters, Applied Physics Letters and Nature Nanotechnology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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