S. Eicher

445 total citations
23 papers, 341 citations indexed

About

S. Eicher is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, S. Eicher has authored 23 papers receiving a total of 341 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 2 papers in Mechanical Engineering. Recurrent topics in S. Eicher's work include Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). S. Eicher is often cited by papers focused on Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). S. Eicher collaborates with scholars based in Switzerland, Canada and Japan. S. Eicher's co-authors include U. Schlapbach, Munaf Rahimo, A. Kopta, André Weber, Stefan Linder, Daniel Schneider, Robert A. Bruce, Steffen Bernet, P. Steimer and F. Bauer and has published in prestigious journals such as Journal of Crystal Growth, Electronics Letters and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

In The Last Decade

S. Eicher

22 papers receiving 317 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Eicher Switzerland	11	319	78	24	18	13	23	341
T. Sakai Japan	11	287 0.9×	40 0.5×	27 1.1×	15 0.8×	14 1.1×	39	320
Wei‐Hsu Chang United States	11	339 1.1×	75 1.0×	8 0.3×	23 1.3×	54 4.2×	24	356
Iulian Nistor Switzerland	14	513 1.6×	60 0.8×	32 1.3×	9 0.5×	21 1.6×	48	529
Karl Otto Dohnke Germany	9	270 0.8×	25 0.3×	14 0.6×	5 0.3×	22 1.7×	21	283
Protap Pramanick Canada	11	273 0.9×	37 0.5×	8 0.3×	16 0.9×	13 1.0×	42	291
Ralf Siemieniec Germany	13	795 2.5×	59 0.8×	20 0.8×	21 1.2×	9 0.7×	45	805
R.P. Love United States	10	568 1.8×	47 0.6×	42 1.8×	12 0.7×	14 1.1×	23	586
D. Navarro Japan	9	349 1.1×	37 0.5×	15 0.6×	6 0.3×	30 2.3×	57	372
P. Gaud France	7	106 0.3×	78 1.0×	37 1.5×	9 0.5×	20 1.5×	12	170
J.M. Dorkel France	11	278 0.9×	18 0.2×	75 3.1×	9 0.5×	5 0.4×	43	324

Countries citing papers authored by S. Eicher

Since Specialization

Citations

This map shows the geographic impact of S. Eicher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Eicher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Eicher more than expected).

Fields of papers citing papers by S. Eicher

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Eicher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Eicher. The network helps show where S. Eicher may publish in the future.

Co-authorship network of co-authors of S. Eicher

This figure shows the co-authorship network connecting the top 25 collaborators of S. Eicher. A scholar is included among the top collaborators of S. Eicher based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Eicher. S. Eicher is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kopta, A., Munaf Rahimo, S. Eicher, & U. Schlapbach. (2006). A Landmark in Electrical Performance of IGBT Modules Utilizing Next Generation Chip Technologies. 1–4. 15 indexed citations

Rahimo, Munaf, A. Kopta, S. Eicher, U. Schlapbach, & Stefan Linder. (2004). Switching-self-clamping-mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes. 437–440. 48 indexed citations

Eicher, S., Munaf Rahimo, Daniel Schneider, et al.. (2004). 4.5kV press pack IGBT designed for ruggedness and reliability. Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting.. 3. 1534–1539. 58 indexed citations

Schneider, Daniel, et al.. (2004). Innovative metal system for IGBT press pack modules. 110–113. 22 indexed citations

Rahimo, Munaf, A. Kopta, S. Eicher, et al.. (2003). Extending the boundary limits of high voltage IGBTs and diodes to above 8 kV. 41–44. 31 indexed citations

Weber, André & S. Eicher. (2003). 10 kV power semiconductors - breakthrough for 6.9 kV medium voltage drives. 45–48. 8 indexed citations

Eicher, S., et al.. (2002). Advanced lifetime control for reducing turn-off switching losses of 4.5 kV IEGT devices. 39–42. 2 indexed citations

Eicher, S., et al.. (2002). Design evaluation of injection enhancement gate transistor based on device simulation. 265–268. 1 indexed citations

Eicher, S., F. Bauer, H. R. Zeller, André Weber, & Wolf Fïchtner. (2002). Design considerations for a 7 kV/3 kA GTO with transparent anode and buffer layer. 1. 29–34. 7 indexed citations

10.

Eicher, S., F. Bauer, André Weber, H. R. Zeller, & Wolf Fïchtner. (2002). Punchthrough type GTO with buffer layer and homogeneous low efficiency anode structure. 261–264. 13 indexed citations

11.

Eicher, S., André Weber, F. Bauer, H. R. Zeller, & Wolf Fïchtner. (2002). A high-power low-loss GTO with adjustable I/sub GT/. 97–100.

12.

Tager, A.A., R. Gaška, Ivan Avrutsky, et al.. (1999). Ion-implanted GaAs-InGaAs lateral current injection laser. IEEE Journal of Selected Topics in Quantum Electronics. 5(3). 664–672. 11 indexed citations

13.

Ivey, Douglas G., et al.. (1997). Microstructural analysis of Pd/Pt/Au/Pd ohmic contacts to InGaP/GaAs. Journal of Materials Science Materials in Electronics. 8(5). 281–288. 2 indexed citations

14.

Ping, Jian, et al.. (1996). Microstructural analysis of a Au/Pt/Pd/Zn ohmic contact to an AlGaAs/GaAs heterojunction bipolar transistor. Journal of Electronic Materials. 25(9). 1478–1486. 3 indexed citations

15.

SpringThorpe, A. J., et al.. (1994). The effect of emitter layer variations on the current gain of AlGaAs-GaAs heterojunction bipolar transistors grown by chemical beam epitaxy. Journal of Crystal Growth. 136(1-4). 230–234. 1 indexed citations

16.

Ivey, Douglas G., Jian Ping, Lin Wan, et al.. (1991). Pd/Zn/Pd/Au ohmic contacts to ρ-Type InP. Journal of Electronic Materials. 20(3). 237–246. 26 indexed citations

17.

Bruce, Robert A., Daniel Clark, & S. Eicher. (1990). Low resistance Pd/Zn/Pd Au ohmic contacts to P-type gaas. Journal of Electronic Materials. 19(3). 225–229. 22 indexed citations

18.

Mand, R.S., S. Eicher, & A. J. SpringThorpe. (1989). High performance of induced-channel heterojunction field-effect transistor (HFET). Electronics Letters. 25(6). 386–387. 10 indexed citations

19.

Bruce, Robert W., S. Eicher, & W. D. Westwood. (1988). Effect of resputtering on composition of WSix films deposited by multilayer sputtering. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1642–1645. 10 indexed citations

20.

Eicher, S. & Robert A. Bruce. (1987). WSi_x formation in W–Si multilayers. Canadian Journal of Physics. 65(8). 868–871. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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