S. Aresu

401 total citations
19 papers, 338 citations indexed

About

S. Aresu is a scholar working on Electrical and Electronic Engineering, Bioengineering and Materials Chemistry. According to data from OpenAlex, S. Aresu has authored 19 papers receiving a total of 338 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 3 papers in Bioengineering and 3 papers in Materials Chemistry. Recurrent topics in S. Aresu's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). S. Aresu is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). S. Aresu collaborates with scholars based in Germany, Austria and Belgium. S. Aresu's co-authors include A. Swinnen, Jan D’Haen, M. D’Olieslaeger, Jean Manca, G. Vanhoyland, I. Haeldermans, Christian Schlünder, H. Reisinger, Wolfgang Gustin and Tibor Grasser and has published in prestigious journals such as Advanced Functional Materials, Microelectronics Reliability and Microelectronic Engineering.

In The Last Decade

S. Aresu

18 papers receiving 334 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Aresu Germany	9	329	139	39	36	31	19	338
Abhijit Roy India	2	332 1.0×	232 1.7×	13 0.3×	45 1.3×	38 1.2×	3	343
Maik Bärenklau Germany	4	281 0.9×	211 1.5×	20 0.5×	48 1.3×	37 1.2×	8	291
Jack E. Parmer United States	5	339 1.0×	279 2.0×	53 1.4×	52 1.4×	23 0.7×	6	367
Qingzhen Bian China	6	187 0.6×	138 1.0×	14 0.4×	25 0.7×	33 1.1×	11	215
Seon Kyoung Son South Korea	8	342 1.0×	304 2.2×	30 0.8×	46 1.3×	21 0.7×	9	374
Mauricio van den Berg Netherlands	3	335 1.0×	265 1.9×	18 0.5×	48 1.3×	23 0.7×	4	356
Gongchu Liu China	9	468 1.4×	401 2.9×	41 1.1×	37 1.0×	27 0.9×	11	491
J. Sheats United States	5	274 0.8×	106 0.8×	39 1.0×	46 1.3×	10 0.3×	8	323
Peiqing Cong China	9	355 1.1×	304 2.2×	28 0.7×	31 0.9×	21 0.7×	20	383
Ao Shang Hong Kong	8	376 1.1×	334 2.4×	32 0.8×	19 0.5×	21 0.7×	8	391

Countries citing papers authored by S. Aresu

Since Specialization

Citations

This map shows the geographic impact of S. Aresu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Aresu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Aresu more than expected).

Fields of papers citing papers by S. Aresu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Aresu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Aresu. The network helps show where S. Aresu may publish in the future.

Co-authorship network of co-authors of S. Aresu

This figure shows the co-authorship network connecting the top 25 collaborators of S. Aresu. A scholar is included among the top collaborators of S. Aresu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Aresu. S. Aresu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

Grossi, Alessandro, et al.. (2023). 28nm Data Memory with Embedded RRAM Technology in Automotive Microcontrollers. 1–4. 8 indexed citations

Aresu, S., et al.. (2014). HCS degradation of 5nm oxide high-voltage PLDMOS. Microelectronics Reliability. 54(9-10). 1883–1886. 1 indexed citations

Schlünder, Christian, Wolfgang Heinrigs, E. Landgraf, et al.. (2014). Hot-carrier induced dielectric breakdown (HCIDB) challenges of a new high performance LDMOS generation. XT.15.1–XT.15.5. 3 indexed citations

Schmitt‐Landsiedel, D., H. Reisinger, Georg Georgakos, et al.. (2012). Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits. 31–34. 3 indexed citations

Schlünder, Christian, S. Aresu, Georg Georgakos, et al.. (2012). HCI vs. BTI? - Neither one's out. 2F.4.1–2F.4.6. 28 indexed citations

Reisinger, H., et al.. (2012). New insights on the PBTI phenomena in SiON pMOSFETs. Microelectronics Reliability. 52(9-10). 1891–1894. 10 indexed citations

Aresu, S., et al.. (2012). Physical understanding and modelling of new hot-carrier degradation effect on PLDMOS transistor. 57. XT.11.1–XT.11.6. 6 indexed citations

Aresu, S., et al.. (2011). Hot-carrier and recovery effect on p-channel lateral DMOS. 90. 77–81. 5 indexed citations

Strasser, M., et al.. (2011). Automotive 130 nm smart-power-technology including embedded flash functionality. 32 indexed citations

10.

Schlünder, Christian, H. Reisinger, S. Aresu, & Wolfgang Gustin. (2011). On the PBTI degradation of pMOSFETs and its impact on IC lifetime. 7–11. 8 indexed citations

11.

Reisinger, H., R.‐P. Vollertsen, P.-J. Wagner, et al.. (2009). A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides. IEEE Transactions on Device and Materials Reliability. 9(2). 106–114. 14 indexed citations

12.

Reisinger, H., R.‐P. Vollertsen, P.-J. Wagner, et al.. (2008). The effect of recovery on NBTI characterization of thick non-nitrided oxides. 1–6. 14 indexed citations

13.

Aresu, S., et al.. (2008). Reduction of test effort. Looking for more acceleration for reliable components for automotive applications. Microelectronics Reliability. 48(8-9). 1490–1493. 1 indexed citations

14.

Aresu, S., et al.. (2007). Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors. Microelectronics Reliability. 47(9-11). 1416–1418. 8 indexed citations

15.

Aresu, S., et al.. (2007). Analysis of ESD protection structure behaviour after ageing as new approach for system level reliability of automotive power devices. Microelectronics Reliability. 47(9-11). 1512–1516. 3 indexed citations

16.

Swinnen, A., I. Haeldermans, Jan D’Haen, et al.. (2006). Tuning the Dimensions of C₆₀‐Based Needlelike Crystals in Blended Thin Films. Advanced Functional Materials. 16(6). 760–765. 188 indexed citations

17.

Aresu, S., W. De Ceuninck, R. Degraeve, et al.. (2005). Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements. Microelectronic Engineering. 80. 182–185. 3 indexed citations

18.

Aresu, S., W. De Ceuninck, G. Knuyt, et al.. (2003). A new method for the analysis of high-resolution SILC data. Microelectronics Reliability. 43(9-11). 1483–1488. 1 indexed citations

19.

Aresu, S., W. De Ceuninck, Kristof Croes, et al.. (2002). High-resolution SILC measurements of thin SiO2 at ultra low voltages. Microelectronics Reliability. 42(9-11). 1485–1489. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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