Rajan Singh

515 total citations
33 papers, 291 citations indexed

About

Rajan Singh is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Rajan Singh has authored 33 papers receiving a total of 291 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electronic, Optical and Magnetic Materials, 15 papers in Materials Chemistry and 13 papers in Electrical and Electronic Engineering. Recurrent topics in Rajan Singh's work include Ga2O3 and related materials (17 papers), ZnO doping and properties (15 papers) and GaN-based semiconductor devices and materials (11 papers). Rajan Singh is often cited by papers focused on Ga2O3 and related materials (17 papers), ZnO doping and properties (15 papers) and GaN-based semiconductor devices and materials (11 papers). Rajan Singh collaborates with scholars based in India, United States and Kuwait. Rajan Singh's co-authors include Hieu Pham Trung Nguyen, Trupti Ranjan Lenka, Ravi Teja Velpula, Barsha Jain, Deepak Kumar Panda, Nour El I. Boukortt, Giovanni Crupi, Phạm Thị, Sharif Md. Sadaf and Vishal Goyal and has published in prestigious journals such as Journal of Electronic Materials, Materials Science in Semiconductor Processing and Astrophysics and Space Science.

In The Last Decade

Rajan Singh

27 papers receiving 282 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Rajan Singh India 10 225 204 103 96 85 33 291
S. R. Mohapatra India 11 232 1.0× 245 1.2× 90 0.9× 65 0.7× 21 0.2× 38 311
Matthew R. Barone United States 10 94 0.4× 223 1.1× 101 1.0× 55 0.6× 27 0.3× 25 266
Vishal Khandelwal Saudi Arabia 10 127 0.6× 131 0.6× 113 1.1× 51 0.5× 56 0.7× 24 242
Manikant Singh United Kingdom 10 209 0.9× 224 1.1× 136 1.3× 132 1.4× 65 0.8× 14 323
C. G. Torres Castanedo Saudi Arabia 5 297 1.3× 292 1.4× 81 0.8× 90 0.9× 155 1.8× 5 361
A. S. Daryapurkar India 9 183 0.8× 220 1.1× 85 0.8× 23 0.2× 17 0.2× 16 270
Catherine Langpoklakpam Taiwan 7 117 0.5× 122 0.6× 185 1.8× 112 1.2× 36 0.4× 16 307
Mykyta Toporkov United States 10 271 1.2× 310 1.5× 133 1.3× 89 0.9× 96 1.1× 17 369
Kyle J. Liddy United States 13 359 1.6× 309 1.5× 178 1.7× 154 1.6× 143 1.7× 35 462
Ranjit Pattanayak India 11 289 1.3× 337 1.7× 106 1.0× 21 0.2× 21 0.2× 22 378

Countries citing papers authored by Rajan Singh

Since Specialization
Citations

This map shows the geographic impact of Rajan Singh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Rajan Singh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Rajan Singh more than expected).

Fields of papers citing papers by Rajan Singh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Rajan Singh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Rajan Singh. The network helps show where Rajan Singh may publish in the future.

Co-authorship network of co-authors of Rajan Singh

This figure shows the co-authorship network connecting the top 25 collaborators of Rajan Singh. A scholar is included among the top collaborators of Rajan Singh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Rajan Singh. Rajan Singh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Singh, Rajan, et al.. (2025). Polarization‐Induced Versus Delta‐Doped β‐Ga2O3 HEMTs—A Performance Comparison. International Journal of Numerical Modelling Electronic Networks Devices and Fields. 38(4).
2.
Singh, Rajan, et al.. (2024). Characteristics Study of OLED Materials. Journal of Physics Conference Series. 2837(1). 12031–12031.
3.
4.
Singh, Rajan, et al.. (2023). Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications. International Journal of Numerical Modelling Electronic Networks Devices and Fields. 37(1). 9 indexed citations
5.
6.
Lenka, Trupti Ranjan, et al.. (2022). Comparative Study of III-Nitride Nano-HEMTs on Different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications. Journal of Electronic Materials. 52(3). 1948–1957. 9 indexed citations
7.
8.
Singh, Rajan, Trupti Ranjan Lenka, Deepak Kumar Panda, et al.. (2022). Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT. Materials Science in Semiconductor Processing. 145. 106627–106627. 10 indexed citations
9.
Lenka, Trupti Ranjan, et al.. (2022). The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga2O3 Nano-HEMT. 434–439. 4 indexed citations
10.
Ech‐Chergui, Abdelkader Nebatti, Sanat Kumar Mukherjee, A. Boukhachem, et al.. (2022). Structural and Compositional Analyses of Spray Pyrolysis α-Lanthanum Sulphide (α-La2S3) Thin Films. Brazilian Journal of Physics. 52(6). 12 indexed citations
11.
Lenka, Trupti Ranjan, et al.. (2022). Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications. Journal of the Korean Physical Society. 81(9). 876–884. 14 indexed citations
12.
Singh, Rajan, Trupti Ranjan Lenka, & Hieu Pham Trung Nguyen. (2021). ANALYTICAL STUDY OF CONDUCTION BAND DISCONTINUITY SUPPORTED 2DEG DENSITY IN AlN/Ga2O3 HEMT. Facta universitatis - series Electronics and Energetics. 34(3). 323–332. 1 indexed citations
13.
Singh, Rajan, Trupti Ranjan Lenka, & Hieu Pham Trung Nguyen. (2021). Analytical study of effect of energy band parameters and lattice temperature on conduction band offset in AlN/Ga2O3 HEMT. Facta universitatis - series Electronics and Energetics. 34(3). 323–332. 2 indexed citations
14.
Singh, Rajan, Trupti Ranjan Lenka, Deepak Kumar Panda, & Hieu Pham Trung Nguyen. (2021). Investigation of β -Ga 2 O 3 -based HEMTs using 2D Simulations for low noise amplification and RF applications. Engineering Research Express. 3(3). 35042–35042. 3 indexed citations
15.
Singh, Rajan, Trupti Ranjan Lenka, & Hieu Pham Trung Nguyen. (2020). Optimization of Dynamic Source Resistance in a β-Ga2O3 HEMT and Its Effect on Electrical Characteristics. Journal of Electronic Materials. 49(9). 5266–5271. 7 indexed citations
16.
Panda, Deepak Kumar, Rajan Singh, Trupti Ranjan Lenka, et al.. (2020). Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study. IET Circuits Devices & Systems. 14(7). 1018–1025. 13 indexed citations
17.
Singh, Rajan, Trupti Ranjan Lenka, Deepak Kumar Panda, et al.. (2020). The dawn of Ga2O3 HEMTs for high power electronics - A review. Materials Science in Semiconductor Processing. 119. 105216–105216. 133 indexed citations
18.
Singh, Rajan, et al.. (2019). Review on Phase Changing Material as the Energy Storage in Solar Cooker. Journal of Emerging Technologies and Innovative Research.
19.
Singh, Rajan, et al.. (2015). Methodology for optimizing ESD protection for high speed LVDS based I/Os. 1–5. 2 indexed citations
20.
Singh, Rajan, et al.. (1994). Fluid to particle heat transfer coefficient determination in a continuous system. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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