R. Zonca

664 total citations
19 papers, 427 citations indexed

About

R. Zonca is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Zonca has authored 19 papers receiving a total of 427 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Zonca's work include Semiconductor materials and devices (13 papers), Advanced Memory and Neural Computing (5 papers) and Chalcogenide Semiconductor Thin Films (5 papers). R. Zonca is often cited by papers focused on Semiconductor materials and devices (13 papers), Advanced Memory and Neural Computing (5 papers) and Chalcogenide Semiconductor Thin Films (5 papers). R. Zonca collaborates with scholars based in Italy and United States. R. Zonca's co-authors include E. Rimini, S. Privitera, Corrado Bongiorno, A. Pirovano, R. Bez, M. L. Polignano, M. Alessandri, C. Gerardi, Alberto Modelli and Maurizio Masi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

R. Zonca

18 papers receiving 422 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Zonca Italy 8 381 364 96 94 65 19 427
Suk Kyoung Hong South Korea 12 413 1.1× 366 1.0× 105 1.1× 109 1.2× 66 1.0× 23 459
J. C. N. Rijpers Netherlands 6 342 0.9× 277 0.8× 94 1.0× 103 1.1× 63 1.0× 13 365
Gentaro Ohbayashi Japan 7 309 0.8× 227 0.6× 89 0.9× 81 0.9× 63 1.0× 10 343
W. van Es-Spiekman Netherlands 5 305 0.8× 237 0.7× 112 1.2× 93 1.0× 30 0.5× 8 335
Kiyoshi Uchiyama Japan 10 288 0.8× 228 0.6× 102 1.1× 69 0.7× 27 0.4× 67 347
Mitsuyuki Yamanaka Japan 14 402 1.1× 490 1.3× 87 0.9× 29 0.3× 34 0.5× 52 550
Yeon Hwa Jo South Korea 10 393 1.0× 364 1.0× 35 0.4× 56 0.6× 23 0.4× 22 433
Osamu Nakagawara Japan 10 519 1.4× 336 0.9× 149 1.6× 197 2.1× 22 0.3× 18 564
Chuanren Yang China 11 351 0.9× 240 0.7× 143 1.5× 108 1.1× 12 0.2× 22 398
M. Kosec Slovenia 12 575 1.5× 356 1.0× 285 3.0× 208 2.2× 13 0.2× 23 611

Countries citing papers authored by R. Zonca

Since Specialization
Citations

This map shows the geographic impact of R. Zonca's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Zonca with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Zonca more than expected).

Fields of papers citing papers by R. Zonca

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Zonca. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Zonca. The network helps show where R. Zonca may publish in the future.

Co-authorship network of co-authors of R. Zonca

This figure shows the co-authorship network connecting the top 25 collaborators of R. Zonca. A scholar is included among the top collaborators of R. Zonca based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Zonca. R. Zonca is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Privitera, S., E. Rimini, & R. Zonca. (2004). Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements. Applied Physics Letters. 85(15). 3044–3046. 197 indexed citations
2.
Zonca, R., et al.. (2004). Ti diffusion in chalcogenides: a ToF-SIMS depth profile characterization approach. Applied Surface Science. 231-232. 821–825. 37 indexed citations
3.
Privitera, S., Corrado Bongiorno, E. Rimini, & R. Zonca. (2004). Crystal nucleation and growth processes in Ge2Sb2Te5. Applied Physics Letters. 84(22). 4448–4450. 69 indexed citations
4.
Privitera, S., et al.. (2003). Amorphous-to-polycrystal transition in GeSbTe thin films. MRS Proceedings. 803. 3 indexed citations
5.
Privitera, S., E. Rimini, Corrado Bongiorno, et al.. (2003). Crystallization and phase separation in Ge2+xSb2Te5 thin films. Journal of Applied Physics. 94(7). 4409–4413. 64 indexed citations
6.
Vanzetti, L., M. Bersani, Erica Iacob, et al.. (2002). XPS and SIMS depth profiling of chlorine in high‐temperature oxynitrides. Surface and Interface Analysis. 34(1). 271–275.
7.
Polignano, M. L., et al.. (2001). Interface properties of annealed and nitrided HTO layers. Microelectronic Engineering. 59(1-4). 379–384. 2 indexed citations
8.
Ghidini, G., et al.. (2001). High quality thin oxynitride by RTP annealing of in situ steam generation oxides for flash memory applications. Solid-State Electronics. 45(8). 1271–1278. 1 indexed citations
9.
10.
Polignano, M. L., et al.. (2001). The impact of the nitridation process on the properties of the Si–SiO2 interface. Journal of Non-Crystalline Solids. 280(1-3). 39–47. 3 indexed citations
11.
Gerardi, C., et al.. (2000). Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology. Micron. 31(3). 291–297. 1 indexed citations
12.
Gerardi, C., et al.. (2000). Effects of nitridation by nitric oxide on the leakage current of thin SiO2 gate oxides. Journal of Applied Physics. 87(1). 498–501. 7 indexed citations
13.
Polignano, M. L., et al.. (2000). Surface characterization by photocurrent measurements. Applied Surface Science. 154-155. 276–282. 1 indexed citations
14.
Polignano, M. L., et al.. (2000). A Novel Method for the Simultaneous Characterization of Bulk Impurities and Surface States by Photocurrent Measurements. Journal of The Electrochemical Society. 147(4). 1577–1577. 9 indexed citations
15.
Tallarida, G., et al.. (1999). Surface morphology of nitrided thin thermal SiO2 studied by atomic force microscopy. Journal of Non-Crystalline Solids. 245(1-3). 210–216. 4 indexed citations
16.
Polignano, M. L., M. Alessandri, G. Ghidini, et al.. (1999). Characterization of nitrided silicon-silicon dioxide interfaces. MRS Proceedings. 591. 3 indexed citations
17.
Polignano, M. L., et al.. (1999). Surface Recombination Velocity from Photocurrent Measurements: Validation and Applications. Journal of The Electrochemical Society. 146(12). 4640–4646. 6 indexed citations
18.
Gerardi, C., et al.. (1999). Nitridation of Thin Gate or Tunnel Oxides by Nitric Oxide. Journal of The Electrochemical Society. 146(8). 3058–3064. 9 indexed citations
19.
Masi, Maurizio, R. Zonca, & Sergio Carrà. (1999). Kinetic Modeling and Dopant Effect on Silicon Deposition: Low Pressure and Plasma Assisted Chemical Vapor Deposition. Journal of The Electrochemical Society. 146(1). 103–110. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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