R. Kraus

904 total citations
34 papers, 665 citations indexed

About

R. Kraus is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Mechanical Engineering. According to data from OpenAlex, R. Kraus has authored 34 papers receiving a total of 665 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 6 papers in Biomedical Engineering and 4 papers in Mechanical Engineering. Recurrent topics in R. Kraus's work include Advancements in Semiconductor Devices and Circuit Design (17 papers), Silicon Carbide Semiconductor Technologies (17 papers) and Semiconductor materials and devices (17 papers). R. Kraus is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (17 papers), Silicon Carbide Semiconductor Technologies (17 papers) and Semiconductor materials and devices (17 papers). R. Kraus collaborates with scholars based in Germany, United Kingdom and Japan. R. Kraus's co-authors include Alberto Castellazzi, Hans Jürgen Mattausch, P. Türkes, J. Sigg, Marc Tiebout, K. Hoffmann, G. Wachutka, York Christian Gerstenmaier, Christoph Jungemann and D. Schmitt‐Landsiedel and has published in prestigious journals such as IEEE Transactions on Power Electronics, IEEE Journal of Solid-State Circuits and Solid-State Electronics.

In The Last Decade

R. Kraus

32 papers receiving 616 citations

Peers

R. Kraus

EEE

ME

BE

CSE

CMP

Masato Mino Japan

David L. Blackburn United States

Marcelo Schupbach United States

Paul Shepherd United States

Chao-Jen Huang Taiwan

P. Türkes Germany

Julu Sun United States

Ahmed Nabih United States

Helmut Köck Austria

Jizheng Qiu United States

Masato Mino Japan

R. Kraus

346 ×0.5

EEE

77 ×0.5

ME

40 ×0.9

BE

43 ×1.1

CSE

20 ×0.6

CMP

Citations per year, relative to R. Kraus R. Kraus (= 1×) peers Masato Mino

Countries citing papers authored by R. Kraus

Since Specialization

Citations

This map shows the geographic impact of R. Kraus's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Kraus with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Kraus more than expected).

Fields of papers citing papers by R. Kraus

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Kraus. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Kraus. The network helps show where R. Kraus may publish in the future.

Co-authorship network of co-authors of R. Kraus

This figure shows the co-authorship network connecting the top 25 collaborators of R. Kraus. A scholar is included among the top collaborators of R. Kraus based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Kraus. R. Kraus is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Castellazzi, Alberto, Asad Fayyaz, & R. Kraus. (2018). SiC MOSFET Device Parameter Spread and Ruggedness of Parallel Multichip Structures. Materials science forum. 924. 811–817. 12 indexed citations

2.

Viet, Dinh Thanh, R. Kraus, & Christoph Jungemann. (2010). Investigation of the performance of strained-SiGe vertical IMOS-transistors. Solid-State Electronics. 54(9). 942–949. 10 indexed citations

3.

Kraus, R., P. Türkes, & Hans Jürgen Mattausch. (2005). Modelling the self-heating of power devices. 124–129. 2 indexed citations

4.

Kraus, R. & G. Knoblinger. (2003). Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs. 209–212. 4 indexed citations

5.

Castellazzi, Alberto, et al.. (2003). Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET’s. Microelectronics Reliability. 43(9-11). 1877–1882. 23 indexed citations

6.

Kraus, R., K. Hoffmann, & Hans Jürgen Mattausch. (2003). A precise model for the transient characteristics of power diodes. 863–869. 8 indexed citations

7.

Kraus, R., et al.. (2003). All MOS on-chip power supply conversion. ed 29. 5.7/1–5.7/3.

8.

Tiebout, Marc, et al.. (2003). MOS varactors with n- and p-type gates and their influence on an LC-VCO in digital CMOS. IEEE Journal of Solid-State Circuits. 38(7). 1139–1147. 43 indexed citations

9.

Tiebout, Marc, et al.. (2002). Influence of the MOS varactor gate doping on the performance of a 2.7GHz–4GHz LC–VCO in standard digital 0.12µm CMOS technology. European Solid-State Circuits Conference. 491–494. 3 indexed citations

10.

Kraus, R., et al.. (2002). A physical model of a CMOS varactor with high capacitance tuning range and its application to simulate a voltage controlled oscillator. 609–612. 9 indexed citations

11.

Kraus, R., et al.. (2002). The influence of the base resistance modulation on switching losses in IGBTS. 3. 1500–1506. 7 indexed citations

12.

Kraus, R., et al.. (2002). Voltage-controlled Substrate Structure for Integrated Inductors in Standard Digital CMOS Technologies. 44. 331–334.

13.

Sigg, J., P. Türkes, & R. Kraus. (2002). Parameter extraction methodology and validation for an electro-thermal physics-based NPT IGBT model. 2. 1166–1173. 35 indexed citations

14.

Kraus, R., et al.. (2002). A new analytical GTO-model for circuit applications. 2. 879–885. 4 indexed citations

15.

Castellazzi, Alberto, et al.. (2002). Reliability analysis of power MOSFET’s with the help of compact models and circuit simulation. Microelectronics Reliability. 42(9-11). 1605–1610. 25 indexed citations

16.

Sigg, J., et al.. (2002). Degradation modeling of semiconductor devices and electrical circuits. 86–90. 3 indexed citations

17.

Tiebout, Marc, et al.. (2001). Comparison of CMOS VCOs for UMTS tuned by standard and novel varactors in standard 0.25µm technology. European Solid-State Circuits Conference. 502–505. 2 indexed citations

18.

Kraus, R. & Hans Jürgen Mattausch. (1998). Status and trends of power semiconductor device models for circuit simulation. IEEE Transactions on Power Electronics. 13(3). 452–465. 98 indexed citations

19.

Kraus, R., et al.. (1992). Multi-megawatt inverter/converter technology for space power applications. STIN. 92. 14294. 2 indexed citations

20.

Kraus, R. & K. Hoffmann. (1989). Optimized sensing scheme of DRAMs. IEEE Journal of Solid-State Circuits. 24(4). 895–899. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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