R. Fehse

513 total citations
22 papers, 396 citations indexed

About

R. Fehse is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, R. Fehse has authored 22 papers receiving a total of 396 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 6 papers in Condensed Matter Physics. Recurrent topics in R. Fehse's work include Semiconductor Quantum Structures and Devices (16 papers), Semiconductor Lasers and Optical Devices (16 papers) and Photonic and Optical Devices (8 papers). R. Fehse is often cited by papers focused on Semiconductor Quantum Structures and Devices (16 papers), Semiconductor Lasers and Optical Devices (16 papers) and Photonic and Optical Devices (8 papers). R. Fehse collaborates with scholars based in United Kingdom, Germany and Ireland. R. Fehse's co-authors include Eoin P. O’Reilly, A.R. Adams, Stephen J. Sweeney, H. Riechert, Stanko Tomić, A. D. Andreev, T. J. C. Hosea, Stelios A. Choulis, S. Osborne and Andreas Amann and has published in prestigious journals such as Physical Review A, Journal of the Optical Society of America B and Electronics Letters.

In The Last Decade

R. Fehse

21 papers receiving 373 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Fehse United Kingdom 9 354 338 101 58 32 22 396
P.E. Selbmann Switzerland 11 299 0.8× 217 0.6× 39 0.4× 49 0.8× 36 1.1× 28 370
S. Weisser Germany 14 437 1.2× 614 1.8× 32 0.3× 64 1.1× 17 0.5× 53 631
A. Girndt Germany 11 309 0.9× 208 0.6× 111 1.1× 41 0.7× 51 1.6× 18 352
R. K. Hayden United Kingdom 11 347 1.0× 165 0.5× 84 0.8× 21 0.4× 34 1.1× 28 365
M.C. Tatham United Kingdom 16 559 1.6× 645 1.9× 24 0.2× 90 1.6× 50 1.6× 29 801
S. Gaillard France 7 477 1.3× 278 0.8× 32 0.3× 55 0.9× 53 1.7× 15 503
Chin‐Yao Tsai United Kingdom 9 221 0.6× 257 0.8× 27 0.3× 39 0.7× 45 1.4× 21 298
M. Yamada Japan 11 318 0.9× 393 1.2× 28 0.3× 35 0.6× 42 1.3× 30 405
A.F. Phillips United Kingdom 6 333 0.9× 337 1.0× 47 0.5× 99 1.7× 30 0.9× 14 369
T. Kettler Germany 14 419 1.2× 449 1.3× 17 0.2× 16 0.3× 59 1.8× 24 486

Countries citing papers authored by R. Fehse

Since Specialization
Citations

This map shows the geographic impact of R. Fehse's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Fehse with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Fehse more than expected).

Fields of papers citing papers by R. Fehse

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Fehse. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Fehse. The network helps show where R. Fehse may publish in the future.

Co-authorship network of co-authors of R. Fehse

This figure shows the co-authorship network connecting the top 25 collaborators of R. Fehse. A scholar is included among the top collaborators of R. Fehse based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Fehse. R. Fehse is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Strauß, Uwe, M. Müller, R. Fehse, et al.. (2011). Next generation 8xx nm laser bars and single emitters. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7918. 79180T–79180T. 3 indexed citations
2.
Behringer, Martin, M. Arzberger, Christoph Wiesner, et al.. (2009). High-power IR laser in SMT package. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7198. 71980F–71980F. 3 indexed citations
3.
Heck, Susannah C., S.B. Healy, S. Osborne, et al.. (2008). Theoretical and experimental analysis of InAs/InP quantum dash lasers. 1–4. 1 indexed citations
4.
Osborne, S., Stephen O’Brien, Kevin Buckley, et al.. (2007). Two-colour Fabry-Perot laser with terahertz primary mode spacing. Electronics Letters. 43(4). 224–225. 3 indexed citations
5.
Osborne, S., Stephen O’Brien, Kevin Buckley, et al.. (2007). Design of Single-Mode and Two-Color Fabry--PÉrot Lasers With Patterned Refractive Index. IEEE Journal of Selected Topics in Quantum Electronics. 13(5). 1157–1163. 27 indexed citations
6.
O’Brien, S., S. Osborne, Kevin Buckley, et al.. (2006). Inverse scattering approach to multiwavelength Fabry-Pérot laser design. Physical Review A. 74(6). 14 indexed citations
7.
O’Brien, Stephen, Andreas Amann, R. Fehse, et al.. (2006). Spectral manipulation in Fabry-Perot lasers: perturbative inverse scattering approach. Journal of the Optical Society of America B. 23(6). 1046–1046. 25 indexed citations
8.
Biancalana, Fabio, S.B. Healy, R. Fehse, & Eoin P. O’Reilly. (2006). Intervalence band solitary waves in semiconductor quantum wells. Physical Review A. 73(6). 10 indexed citations
9.
Sweeney, Stephen J., R. Fehse, A.R. Adams, & H. Riechert. (2004). Intrinsic temperature sensitivities of 1.3 μm GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers. 1. 39–40. 2 indexed citations
10.
Fehse, R., et al.. (2004). Influence of growth temperature on carrier recombination in GaInNAs-based lasers. IEE Proceedings - Optoelectronics. 151(5). 447–451. 2 indexed citations
11.
Tomić, Stanko, et al.. (2003). Gain‐cavity alignment profiling of 1.3 μm emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques. physica status solidi (b). 235(2). 480–485. 2 indexed citations
12.
Tomić, Stanko, R. Fehse, Stelios A. Choulis, et al.. (2003). Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 μm lasers. Ktisis at Cyprus University of Technology (Cyprus University of Technology). 11. 41–42.
13.
Fehse, R., A.R. Adams, Stephen J. Sweeney, et al.. (2003). Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers. Solid-State Electronics. 47(3). 501–506. 4 indexed citations
14.
Fehse, R., Stanko Tomić, Stephen J. Sweeney, et al.. (2003). Investigation of 1.3-μm GaInNAd vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques. IEEE Journal of Selected Topics in Quantum Electronics. 9(5). 1202–1208. 7 indexed citations
15.
Fehse, R., Igor P. Marko, & A.R. Adams. (2003). Long wavelength lasers on GaAs substrates. IEE Proceedings - Circuits Devices and Systems. 150(6). 521–521. 12 indexed citations
16.
Sweeney, Stephen J., S. R. Jin, R. Fehse, et al.. (2003). A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation. 43–44. 4 indexed citations
17.
Tomić, Stanko, Eoin P. O’Reilly, A.R. Adams, & R. Fehse. (2002). A theoretical analysis of the radiative current and its dependence on pressure in GaInNAs 1.3 μm lasers. 1. 328–329. 2 indexed citations
18.
Fehse, R., Stanko Tomić, A.R. Adams, et al.. (2002). A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers. IEEE Journal of Selected Topics in Quantum Electronics. 8(4). 801–810. 116 indexed citations
19.
Fehse, R., S. R. Jin, Stephen J. Sweeney, et al.. (2001). Evidence for large monomolecular recombinationcontribution tothreshold current in 1.3 µm GaInNAs semiconductor lasers. Electronics Letters. 37(25). 1518–1520. 22 indexed citations
20.
Fehse, R., Stephen J. Sweeney, A.R. Adams, et al.. (2001). Insights into carrier recombination processes in1.3 µm GaInNAs-based semiconductor lasers attained using high pressure. Electronics Letters. 37(2). 92–93. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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