P. Louis

418 total citations
24 papers, 342 citations indexed

About

P. Louis is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P. Louis has authored 24 papers receiving a total of 342 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in P. Louis's work include Semiconductor materials and devices (13 papers), Semiconductor materials and interfaces (6 papers) and Thin-Film Transistor Technologies (5 papers). P. Louis is often cited by papers focused on Semiconductor materials and devices (13 papers), Semiconductor materials and interfaces (6 papers) and Thin-Film Transistor Technologies (5 papers). P. Louis collaborates with scholars based in France, United States and Poland. P. Louis's co-authors include A.M. Gokhale, T. Angot, Marie‐Paule Besland, P. Viktorovitch, A. Chovet, Maria Gîrleanu, Gilles Arnold, J. Joseph, Y. Robach and G. Hollinger and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

P. Louis

24 papers receiving 331 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Louis France 11 124 116 97 92 78 24 342
Hiroyuki Ishigaki Japan 11 92 0.7× 73 0.6× 77 0.8× 38 0.4× 67 0.9× 46 340
Risaku Toda United States 10 176 1.4× 104 0.9× 37 0.4× 103 1.1× 94 1.2× 44 379
Chuan-Lu Li China 9 207 1.7× 130 1.1× 36 0.4× 81 0.9× 131 1.7× 15 429
Jeffery C. C. Lo Hong Kong 10 261 2.1× 66 0.6× 90 0.9× 52 0.6× 81 1.0× 98 412
So Baba Japan 12 207 1.7× 232 2.0× 75 0.8× 23 0.3× 29 0.4× 25 364
Julia Osten Germany 9 121 1.0× 118 1.0× 31 0.3× 170 1.8× 131 1.7× 15 381
Aicha Elshabini United States 11 342 2.8× 144 1.2× 55 0.6× 31 0.3× 78 1.0× 39 476
Erhard Schreck United States 14 109 0.9× 212 1.8× 249 2.6× 168 1.8× 112 1.4× 45 489
Ender Savrun United States 11 237 1.9× 182 1.6× 106 1.1× 49 0.5× 123 1.6× 40 467
Hong Wan China 13 277 2.2× 264 2.3× 49 0.5× 206 2.2× 34 0.4× 40 572

Countries citing papers authored by P. Louis

Since Specialization
Citations

This map shows the geographic impact of P. Louis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Louis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Louis more than expected).

Fields of papers citing papers by P. Louis

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Louis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Louis. The network helps show where P. Louis may publish in the future.

Co-authorship network of co-authors of P. Louis

This figure shows the co-authorship network connecting the top 25 collaborators of P. Louis. A scholar is included among the top collaborators of P. Louis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Louis. P. Louis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Saidane, El Hadi, et al.. (2021). 3D printed continuous glass fibre-reinforced polyamide composites: Fabrication and mechanical characterisation. Journal of Reinforced Plastics and Composites. 41(7-8). 284–295. 11 indexed citations
2.
3.
Gîrleanu, Maria, et al.. (2008). Electronic and atomic structures of Ti1−xAlxN thin films related to their damage behavior. Journal of Applied Physics. 103(8). 20 indexed citations
4.
Simon, Laurent, P. Louis, C. Pirri, et al.. (2003). Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth. Journal of Crystal Growth. 256(1-2). 1–6. 4 indexed citations
5.
Angot, T. & P. Louis. (2000). Thermodynamically driven Ge/Si place exchange induced by hydrogen on Ge-covered Si(001) surfaces. Physical review. B, Condensed matter. 61(11). 7293–7296. 10 indexed citations
6.
Angot, T. & P. Louis. (1999). Metal–semiconductor transition observed by HREELS on the surface of Si1−xGex/Si(001) grown by CTL-CVD at 620 K. Surface Science. 427-428. 224–228. 4 indexed citations
7.
Angot, T. & P. Louis. (1999). Hydrogen population on Ge-covered Si(001) surfaces. Physical review. B, Condensed matter. 60(8). 5938–5945. 14 indexed citations
8.
Louis, P., T. Angot, D. Bolmont, & G. Gewinner. (1999). Pairing mechanism in interaction of atomic hydrogen with epitaxial erbium silicide. Surface Science. 422(1-3). 65–76. 3 indexed citations
9.
Werckmann, J., et al.. (1997). Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy. Thin Solid Films. 294(1-2). 84–87. 7 indexed citations
10.
Besland, Marie‐Paule, et al.. (1997). In Situ Photoluminescence Control during Fabrication of SiO2/InP Structures. Journal of The Electrochemical Society. 144(6). 2086–2095. 4 indexed citations
11.
Angot, T., et al.. (1997). In situ monitoring of growth rate parameters in hot-wire assisted gas source-molecular beam epitaxy using a quartz microbalance. Applied Surface Science. 115(3). 299–306. 3 indexed citations
12.
Besland, Marie‐Paule, et al.. (1996). Optimized SiO2/InP structures prepared by electron cyclotron resonance plasma. Journal of Applied Physics. 80(5). 3100–3109. 9 indexed citations
13.
14.
Louis, P. & A.M. Gokhale. (1995). Application of image analysis for characterization of spatial arrangements of features in microstructure. Metallurgical and Materials Transactions A. 26(6). 1449–1456. 54 indexed citations
15.
Louis, P., et al.. (1995). Spherical galaxian distribution functions with adjustable anisotropy. Monthly Notices of the Royal Astronomical Society. 275(4). 1017–1027. 12 indexed citations
16.
Viktorovitch, P., P. Louis, Marie‐Paule Besland, & A. Chovet. (1995). Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements. Solid-State Electronics. 38(5). 1035–1043. 34 indexed citations
17.
Pogány, D., et al.. (1993). Study of Discrete Current Fluctuations in the Metal/InP Native Oxide/InP Structures. physica status solidi (a). 136(2). K131–K134. 1 indexed citations
18.
Besland, Marie‐Paule, P. Louis, Y. Robach, et al.. (1992). Growth of passivating UV/ozone oxides on InP. Applied Surface Science. 56-58. 846–854. 16 indexed citations
19.
Tardy, J., Pierre Viktorovitch, M. Gendry, et al.. (1991). Long-term stability of InP MIS devices. Applied Surface Science. 50(1-4). 383–389. 7 indexed citations
20.
Louis, P., et al.. (1976). Preparation d'aidehydes‐ethyleniques deuteries sur le groupemen carbonyle. Journal of Labelled Compounds and Radiopharmaceuticals. 12(3). 389–394. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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