Osamu Ichikawa
About
In The Last Decade
Osamu Ichikawa
93 papers receiving 1.4k citations
Peers
Comparison fields: 5 of 115
- Electrical and Electronic Engineering 1.0k
- Atomic and Molecular Physics, and Optics 255
- Biomedical Engineering 205
- Control and Systems Engineering 184
- Materials Chemistry 143
Countries citing papers authored by Osamu Ichikawa
This map shows the geographic impact of Osamu Ichikawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Osamu Ichikawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Osamu Ichikawa more than expected).
Fields of papers citing papers by Osamu Ichikawa
This network shows the impact of papers produced by Osamu Ichikawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Osamu Ichikawa. The network helps show where Osamu Ichikawa may publish in the future.
Co-authorship network of co-authors of Osamu Ichikawa
This figure shows the co-authorship network connecting the top 25 collaborators of Osamu Ichikawa. A scholar is included among the top collaborators of Osamu Ichikawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Osamu Ichikawa. Osamu Ichikawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 0 | |
| 2 | 8 | |
| 3 | 13 | |
| 4 | Strained extremely-thin body In 0.53 Ga 0.47 As-on-insulator MOSFETs on Si substrates | 3 |
| 5 | High performance extremely-thin body InAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D by contact resistance reduction technology | 8 |
| 6 | Demonstration of InGaAs/Ge dual channel CMOS inverters with high electron and hole mobility using staked 3D integration | 16 |
| 7 | 33 | |
| 8 | CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding | 13 |
| 9 | 23 | |
| 10 | Speech Input Method in Automobiles Reflecting Analysis on How Users Speak | 1 |
| 11 | Sound Source Localization Using a Profile Fitting Method with Sound Reflectors | 2 |
| 12 | SIMILARITIES AND DISSIMILARITIES OF MERIDIAN FUNCTIONS BETWEEN GENDERS | 1 |
| 13 | Speech Enhancement by Profile Fitting Method | 3 |
| 14 | 8 | |
| 15 | 3 | |
| 16 | 25 | |
| 17 | 1 | |
| 18 | 10 | |
| 19 | 16 | |
| 20 | 1 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.