Omid Habibpour

748 total citations
23 papers, 602 citations indexed

About

Omid Habibpour is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Omid Habibpour has authored 23 papers receiving a total of 602 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Materials Chemistry, 14 papers in Electrical and Electronic Engineering and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Omid Habibpour's work include Graphene research and applications (19 papers), 2D Materials and Applications (7 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Omid Habibpour is often cited by papers focused on Graphene research and applications (19 papers), 2D Materials and Applications (7 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Omid Habibpour collaborates with scholars based in Sweden, Poland and Italy. Omid Habibpour's co-authors include Josip Vukušić, Jan Stake, Herbert Zirath, Niklas Rorsman, Farshid Raissi, Serguei Cherednichenko, Michael Andersson, K. Yhland, Zhongxia Simon He and Włodek Strupiński and has published in prestigious journals such as Scientific Reports, Carbon and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

Omid Habibpour

21 papers receiving 581 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Omid Habibpour Sweden 13 475 401 180 165 37 23 602
A. Kosarev Mexico 10 147 0.3× 245 0.6× 106 0.6× 78 0.5× 20 0.5× 48 337
Jiayue Tong United States 6 200 0.4× 184 0.5× 88 0.5× 80 0.5× 108 2.9× 9 350
Gunther Jegert Germany 12 164 0.3× 372 0.9× 49 0.3× 54 0.3× 64 1.7× 16 409
Matthias Goldsche Germany 8 305 0.6× 172 0.4× 227 1.3× 104 0.6× 23 0.6× 10 410
M. Winters Sweden 9 224 0.5× 239 0.6× 68 0.4× 92 0.6× 37 1.0× 16 332
Andrew Briggs United States 8 202 0.4× 257 0.6× 123 0.7× 139 0.8× 77 2.1× 24 407
Naoki Fujimura Japan 4 193 0.4× 197 0.5× 86 0.5× 106 0.6× 26 0.7× 7 343
Justin C. Hackley United States 9 258 0.5× 322 0.8× 68 0.4× 35 0.2× 33 0.9× 11 395
Fedor A. Benimetskiy Russia 8 123 0.3× 181 0.5× 270 1.5× 170 1.0× 77 2.1× 24 408
Hari S. Solanki India 7 215 0.5× 209 0.5× 277 1.5× 138 0.8× 19 0.5× 11 425

Countries citing papers authored by Omid Habibpour

Since Specialization
Citations

This map shows the geographic impact of Omid Habibpour's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Omid Habibpour with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Omid Habibpour more than expected).

Fields of papers citing papers by Omid Habibpour

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Omid Habibpour. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Omid Habibpour. The network helps show where Omid Habibpour may publish in the future.

Co-authorship network of co-authors of Omid Habibpour

This figure shows the co-authorship network connecting the top 25 collaborators of Omid Habibpour. A scholar is included among the top collaborators of Omid Habibpour based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Omid Habibpour. Omid Habibpour is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mansouri, Aida, Omid Habibpour, Herbert Zirath, et al.. (2023). Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions. IEEE Transactions on Electron Devices. 70(11). 5977–5982.
2.
Vassilev, Vessen, Ashraf Uz Zaman, Yu Yan, et al.. (2020). Nongalvanic Generic Packaging Solution Demonstrated in a Fully Integrated D-Band Receiver. IEEE Transactions on Terahertz Science and Technology. 10(3). 321–330. 16 indexed citations
3.
Habibpour, Omid, et al.. (2018). W-Band Graphene-Based Six-Port Receiver. IEEE Microwave and Wireless Components Letters. 28(4). 347–349. 12 indexed citations
4.
He, Zhongxia Simon, Omid Habibpour, Vincent Desmaris, et al.. (2018). A Low-loss D-band Chip-to-Waveguide Transition Using Unilateral Fin-line Structure. Chalmers Research (Chalmers University of Technology). 390–393. 4 indexed citations
5.
Mansouri, Aida, Omid Habibpour, M. Winters, et al.. (2017). High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide. Scientific Reports. 7(1). 2419–2419. 34 indexed citations
6.
Habibpour, Omid, Zhongxia Simon He, Włodek Strupiński, Niklas Rorsman, & Herbert Zirath. (2017). Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication. Scientific Reports. 7(1). 41828–41828. 31 indexed citations
7.
Engström, Olof, Max C. Lemme, & Omid Habibpour. (2017). (Invited) Properties of Metal/High-kOxide/Graphene Structures. ECS Transactions. 80(1). 157–176.
8.
Habibpour, Omid, Włodzimierz Strupiński, Niklas Rorsman, P. Ciepielewski, & Herbert Zirath. (2017). Generic Graphene Based Components and Circuits for Millimeter Wave High Data-rate Communication Systems. MRS Advances. 2(58-59). 3559–3564. 1 indexed citations
9.
Habibpour, Omid, Zhongxia Simon He, Włodek Strupiński, et al.. (2017). A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET. IEEE Microwave and Wireless Components Letters. 27(2). 168–170. 31 indexed citations
10.
Habibpour, Omid, Zhongxia Simon He, Włodek Strupiński, et al.. (2016). Graphene FET Gigabit ON–OFF Keying Demodulator at 96 GHz. IEEE Electron Device Letters. 37(3). 333–336. 30 indexed citations
11.
Habibpour, Omid, Niklas Rorsman, & Herbert Zirath. (2015). Developing graphene based MMICs on SiC substrate. 2015 Asia-Pacific Microwave Conference (APMC). 33. 1–3. 2 indexed citations
12.
Winters, M., Omid Habibpour, Ivan G. Ivanov, et al.. (2014). Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies. Carbon. 81. 96–104. 7 indexed citations
13.
Habibpour, Omid, M. Winters, Niklas Rorsman, & Herbert Zirath. (2014). High gain graphene field effect transistors for wideband amplifiers. Chalmers Research (Chalmers University of Technology). 371–373. 7 indexed citations
14.
Ul‐Hassan, Jawad, M. Winters, Ivan G. Ivanov, et al.. (2014). Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers. Carbon. 82. 12–23. 15 indexed citations
15.
Habibpour, Omid, Josip Vukušić, & Jan Stake. (2013). A 30-GHz Integrated Subharmonic Mixer Based on a Multichannel Graphene FET. IEEE Transactions on Microwave Theory and Techniques. 61(2). 841–847. 59 indexed citations
16.
Raissi, Farshid, et al.. (2013). Graphene-Si Schottky IR Detector. IEEE Journal of Quantum Electronics. 49(7). 589–594. 109 indexed citations
17.
Habibpour, Omid, Josip Vukušić, & Jan Stake. (2012). A Large-Signal Graphene FET Model. IEEE Transactions on Electron Devices. 59(4). 968–975. 66 indexed citations
18.
Andersson, Michael, Omid Habibpour, Josip Vukušić, & Jan Stake. (2012). Noise figure characterization of a subharmonic graphene FET mixer. Chalmers Research (Chalmers University of Technology). 306. 1–3. 3 indexed citations
19.
Andersson, Michael, Omid Habibpour, Josip Vukušić, & Jan Stake. (2012). 10 dB small-signal graphene FET amplifier. Electronics Letters. 48(14). 861–863. 47 indexed citations
20.
Habibpour, Omid, Serguei Cherednichenko, Josip Vukušić, & Jan Stake. (2011). Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics. IEEE Electron Device Letters. 32(7). 871–873. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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