Sung-Min Yoon

427 total citations
8 papers, 173 citations indexed

About

Sung-Min Yoon is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Sung-Min Yoon has authored 8 papers receiving a total of 173 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 2 papers in Cellular and Molecular Neuroscience. Recurrent topics in Sung-Min Yoon's work include Thin-Film Transistor Technologies (5 papers), Semiconductor materials and devices (5 papers) and ZnO doping and properties (5 papers). Sung-Min Yoon is often cited by papers focused on Thin-Film Transistor Technologies (5 papers), Semiconductor materials and devices (5 papers) and ZnO doping and properties (5 papers). Sung-Min Yoon collaborates with scholars based in South Korea, Japan and United States. Sung-Min Yoon's co-authors include Sung‐Min Yoon, Seung Eon Moon, Nak‐Jin Seong, Kyu-Jeong Choi, Eisuke Tokumitsu, Hiroshi Ishiwara, Jungsik Choi, Myung‐June Park and Seung-Yun Lee and has published in prestigious journals such as Nanoscale, RSC Advances and Journal of Non-Crystalline Solids.

In The Last Decade

Sung-Min Yoon

8 papers receiving 169 citations

Peers

Sung-Min Yoon

EEE

MC

CMN

PP

EOMM

Subhali Subhechha Belgium

E. Vecchio Belgium

Geun Hyeong Park South Korea

Fenning Liu China

Yongwen Sun United States

Geun Taek Yu South Korea

Dmitry Negrov Russia

Roman R. Khakimov Russia

T. Magis France

Kuan‐Ju Zhou Taiwan

Subhali Subhechha Belgium

Sung-Min Yoon

288 ×1.7

EEE

83 ×0.8

MC

16 ×1.0

CMN

27 ×1.7

PP

27 ×2.1

EOMM

Citations per year, relative to Sung-Min Yoon Sung-Min Yoon (= 1×) peers Subhali Subhechha

Countries citing papers authored by Sung-Min Yoon

Since Specialization

Citations

This map shows the geographic impact of Sung-Min Yoon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sung-Min Yoon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sung-Min Yoon more than expected).

Fields of papers citing papers by Sung-Min Yoon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sung-Min Yoon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sung-Min Yoon. The network helps show where Sung-Min Yoon may publish in the future.

Co-authorship network of co-authors of Sung-Min Yoon

This figure shows the co-authorship network connecting the top 25 collaborators of Sung-Min Yoon. A scholar is included among the top collaborators of Sung-Min Yoon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sung-Min Yoon. Sung-Min Yoon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

8 of 8 papers shown

1.

Yoon, Sung-Min, Seung Eon Moon, & Sung‐Min Yoon. (2020). Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO₂thin films. Nanoscale. 12(25). 13421–13430. 54 indexed citations

2.

Seong, Nak‐Jin, et al.. (2019). Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition. Journal of Materials Chemistry C. 7(20). 6059–6069. 37 indexed citations

3.

Yoon, Sung-Min, et al.. (2019). Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C. 89. 1–3. 1 indexed citations

4.

Yoon, Sung-Min, et al.. (2018). Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition. RSC Advances. 8(44). 25014–25020. 49 indexed citations

5.

Yoon, Sung-Min, et al.. (2018). Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition. RSC Advances. 8(60). 34215–34223. 2 indexed citations

6.

Park, Myung‐June, et al.. (2014). Impact of Aluminum Incorporation into In-Zn-O Active Channel for Highly-Stable Thin-Film Transistor Using Solution Process. ECS Solid State Letters. 3(9). Q44–Q46. 14 indexed citations

7.

Lee, Seung-Yun, et al.. (2011). Chalcogenide programmable switches with SiGeSb heating layers. Journal of Non-Crystalline Solids. 358(17). 2405–2408. 1 indexed citations

8.

Yoon, Sung-Min, Eisuke Tokumitsu, & Hiroshi Ishiwara. (1999). Adaptive-learning neuron integrated circuits using metal-ferroelectric (SrBi/sub 2/Ta/sub 2/O/sub 9/)-semiconductor (MFS) FET's. IEEE Electron Device Letters. 20(10). 526–528. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact