M.K. Emsley

519 total citations
21 papers, 392 citations indexed

About

M.K. Emsley is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M.K. Emsley has authored 21 papers receiving a total of 392 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in M.K. Emsley's work include Photonic and Optical Devices (15 papers), Semiconductor Quantum Structures and Devices (6 papers) and Semiconductor Lasers and Optical Devices (6 papers). M.K. Emsley is often cited by papers focused on Photonic and Optical Devices (15 papers), Semiconductor Quantum Structures and Devices (6 papers) and Semiconductor Lasers and Optical Devices (6 papers). M.K. Emsley collaborates with scholars based in United States, Switzerland and Italy. M.K. Emsley's co-authors include M. Selim Ünlü, Olufemi Dosunmu, Lionel C. Kimerling, D.D. Cannon, B. Ghyselen, Piera Maccagnani, Jifeng Liu, Massimo Ghioni, Ivan Rech and Paul Müller and has published in prestigious journals such as Journal of Crystal Growth, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and IEEE Journal of Selected Topics in Quantum Electronics.

In The Last Decade

M.K. Emsley

20 papers receiving 377 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.K. Emsley United States 8 339 183 116 85 53 21 392
Olufemi Dosunmu United States 10 477 1.4× 215 1.2× 143 1.2× 127 1.5× 29 0.5× 31 513
Stas Litski United States 5 539 1.6× 245 1.3× 105 0.9× 119 1.4× 119 2.2× 8 574
K. Vaccaro United States 12 292 0.9× 145 0.8× 40 0.3× 83 1.0× 60 1.1× 51 335
Neil Na Taiwan 10 232 0.7× 172 0.9× 61 0.5× 34 0.4× 42 0.8× 30 336
N. Puetz Canada 16 618 1.8× 484 2.6× 71 0.6× 76 0.9× 42 0.8× 40 715
T. Isshiki United States 12 482 1.4× 234 1.3× 58 0.5× 57 0.7× 101 1.9× 25 554
Jessica Sandland United States 5 522 1.5× 288 1.6× 154 1.3× 154 1.8× 10 0.2× 14 559
Nick K. Hon United States 8 372 1.1× 243 1.3× 101 0.9× 90 1.1× 7 0.1× 20 476
Tsung‐Ju Lu United States 7 195 0.6× 241 1.3× 154 1.3× 89 1.0× 27 0.5× 14 383
Joshua M. Grant United States 12 631 1.9× 292 1.6× 187 1.6× 87 1.0× 12 0.2× 31 655

Countries citing papers authored by M.K. Emsley

Since Specialization
Citations

This map shows the geographic impact of M.K. Emsley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.K. Emsley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.K. Emsley more than expected).

Fields of papers citing papers by M.K. Emsley

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.K. Emsley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.K. Emsley. The network helps show where M.K. Emsley may publish in the future.

Co-authorship network of co-authors of M.K. Emsley

This figure shows the co-authorship network connecting the top 25 collaborators of M.K. Emsley. A scholar is included among the top collaborators of M.K. Emsley based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.K. Emsley. M.K. Emsley is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Emsley, M.K., et al.. (2012). Ion-implant doped large-area n-type Czochralski high-efficiency industrial solar cells. 2254–2257. 17 indexed citations
3.
Ghioni, Massimo, et al.. (2008). Resonant-Cavity-Enhanced Single-Photon Avalanche Diodes on Reflecting Silicon Substrates. IEEE Photonics Technology Letters. 20(6). 413–415. 21 indexed citations
4.
Ghioni, Massimo, et al.. (2008). Resonant-cavity-enhanced single photon avalanche diodes on double silicon-on-insulator substrates. Journal of Modern Optics. 56(2-3). 309–316. 12 indexed citations
5.
Müller, Paul, Yusuf Leblebici, M.K. Emsley, et al.. (2006). Design and Integration of All-Silicon Fiber-Optic Receivers for Multi-Gigabit Chip-to-Chip Links. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 480–483.
6.
Dosunmu, Olufemi, M.K. Emsley, M. Selim Ünlü, D.D. Cannon, & Lionel C. Kimerling. (2005). High speed resonant cavity enhanced Ge photodetectors on Si reflecting substrates for 1550 nm operation. 3 indexed citations
7.
Dosunmu, Olufemi, D.D. Cannon, M.K. Emsley, et al.. (2004). Germanium on double-SOI photodetectors for 1550-nm operation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5353. 65–65. 5 indexed citations
8.
Müller, Paul, Yusuf Leblebici, M.K. Emsley, & M. Selim Ünlü. (2004). A 4-channel 2.5Gb/s/channel 66dBΩ inductorless transimpedance amplifier [optical receiver applications]. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 491–494. 2 indexed citations
9.
Dosunmu, Olufemi, D.D. Cannon, M.K. Emsley, Lionel C. Kimerling, & M. Selim Ünlü. (2004). High speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550 nm operation. 1. 148–149. 1 indexed citations
10.
Emsley, M.K., Olufemi Dosunmu, M. Selim Ünlü, Paul Müller, & Yusuf Leblebici. (2004). Realization of high-efficiency 10 GHz bandwidth silicon photodetector arrays for fully integrated optical data communication interfaces. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 47–50. 5 indexed citations
11.
Dosunmu, Olufemi, et al.. (2004). High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation. IEEE Photonics Technology Letters. 17(1). 175–177. 108 indexed citations
12.
Dosunmu, Olufemi, D.D. Cannon, M.K. Emsley, et al.. (2004). Resonant Cavity Enhanced Ge Photodetectors for 1550 nm Operation on Reflecting Si Substrates. IEEE Journal of Selected Topics in Quantum Electronics. 10(4). 694–701. 44 indexed citations
13.
Dosunmu, Olufemi, M.K. Emsley, D.D. Cannon, et al.. (2004). Germanium on double-SOI photodetectors for 1550 nm operation. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 2. 853–854. 3 indexed citations
14.
Dosunmu, Olufemi, M.K. Emsley, D.D. Cannon, et al.. (2003). High-Speed Germanium on Double-SOI Photodetectors for 1550 nm Operation. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 1 indexed citations
15.
Emsley, M.K., Olufemi Dosunmu, Paul Müller, M. Selim Ünlü, & Yusuf Leblebici. (2003). Silicon resonant-cavity-enhanced photodetector arrays for optical interconnects. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5246. 409–409. 3 indexed citations
16.
Emsley, M.K. & M. Selim Ünlü. (2002). Epitaxy-ready reflecting substrates for resonant-cavity-enhanced silicon photodetectors. 2. 432–433. 4 indexed citations
17.
Emsley, M.K., Olufemi Dosunmu, & M. Selim Ünlü. (2002). High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates. IEEE Photonics Technology Letters. 14(4). 519–521. 82 indexed citations
18.
Emsley, M.K., Olufemi Dosunmu, & M. Selim Ünlü. (2002). High-efficiency, 10 GHz bandwidth resonant-cavity-enhanced silicon photodetectors operating at 850 nm wavelength. 2. 839–840. 2 indexed citations
19.
Emsley, M.K., Olufemi Dosunmu, & M. Selim Ünlü. (2002). Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics. IEEE Journal of Selected Topics in Quantum Electronics. 8(4). 948–955. 61 indexed citations
20.
Schwegler, V., M. Kamp, M.K. Emsley, et al.. (2001). GaN-based lasers on SiC: influence of mirror reflectivity on L–I characteristics. Journal of Crystal Growth. 230(3-4). 512–516. 2 indexed citations

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