N. Ohnoki

541 total citations
23 papers, 411 citations indexed

About

N. Ohnoki is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, N. Ohnoki has authored 23 papers receiving a total of 411 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 1 paper in Condensed Matter Physics. Recurrent topics in N. Ohnoki's work include Semiconductor Lasers and Optical Devices (23 papers), Photonic and Optical Devices (20 papers) and Semiconductor Quantum Structures and Devices (17 papers). N. Ohnoki is often cited by papers focused on Semiconductor Lasers and Optical Devices (23 papers), Photonic and Optical Devices (20 papers) and Semiconductor Quantum Structures and Devices (17 papers). N. Ohnoki collaborates with scholars based in Japan. N. Ohnoki's co-authors include Fumio Koyama, Kenichi Iga, T. Mukaihara, Nobuaki Hatori, Yusuke Hayashi, Y. Hayashi, Akihiro Matsutani, Toshihiko Baba, Nobuhiko Nishiyama and Masahiko Abe and has published in prestigious journals such as Applied Physics Letters, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

N. Ohnoki

22 papers receiving 400 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Ohnoki Japan 9 406 244 26 11 10 23 411
T. Wipiejewski United States 11 422 1.0× 181 0.7× 16 0.6× 23 2.1× 9 0.9× 40 435
K. Furuya Japan 11 368 0.9× 274 1.1× 27 1.0× 30 2.7× 12 1.2× 46 418
H. Bissessur France 14 489 1.2× 172 0.7× 30 1.2× 17 1.5× 6 0.6× 55 497
R.P. Espindola United States 14 673 1.7× 209 0.9× 7 0.3× 13 1.2× 9 0.9× 40 683
D. Carpentier France 11 412 1.0× 243 1.0× 13 0.5× 15 1.4× 15 1.5× 35 426
M. Svilans Canada 10 321 0.8× 229 0.9× 39 1.5× 16 1.5× 11 1.1× 21 330
T. Sugie Japan 14 485 1.2× 166 0.7× 16 0.6× 39 3.5× 4 0.4× 37 506
J. Boucart Switzerland 13 361 0.9× 225 0.9× 25 1.0× 19 1.7× 17 1.7× 36 377
T. A. Richard United States 9 560 1.4× 440 1.8× 15 0.6× 20 1.8× 20 2.0× 19 576
G.S. Li United States 10 419 1.0× 149 0.6× 40 1.5× 33 3.0× 2 0.2× 20 427

Countries citing papers authored by N. Ohnoki

Since Specialization
Citations

This map shows the geographic impact of N. Ohnoki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Ohnoki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Ohnoki more than expected).

Fields of papers citing papers by N. Ohnoki

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Ohnoki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Ohnoki. The network helps show where N. Ohnoki may publish in the future.

Co-authorship network of co-authors of N. Ohnoki

This figure shows the co-authorship network connecting the top 25 collaborators of N. Ohnoki. A scholar is included among the top collaborators of N. Ohnoki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Ohnoki. N. Ohnoki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
3.
Ohnoki, N., Fumio Koyama, & Kenichi Iga. (1998). Superlattice AlAs/AlInAs-oxide current aperture for long wavelength InP-based vertical-cavity surface-emitting laser structure. Applied Physics Letters. 73(22). 3262–3264. 16 indexed citations
4.
Ohnoki, N., et al.. (1997). GaInAs/AlGaInAs Semiconductor Lasers with AlAs Oxide Current Confinement Structure. Japanese Journal of Applied Physics. 36(3S). 1896–1896. 6 indexed citations
5.
Ohnoki, N., et al.. (1997). Proposal and Demonstration of AlAs-Oxide Confinement Structure for InP-Based Long Wavelength Lasers. Japanese Journal of Applied Physics. 36(1R). 148–148. 8 indexed citations
6.
Hatori, Nobuaki, et al.. (1996). N-type modulation-doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition. Conference on Lasers and Electro-Optics. 184–185. 1 indexed citations
8.
Hatori, Nobuaki, T. Mukaihara, Y. Hayashi, et al.. (1996). Design and Fabrication of InGaAs/GaAs Quantum Wires for Vertical-Cavity Surface-Emitting Lasers. Japanese Journal of Applied Physics. 35(3R). 1777–1777. 4 indexed citations
9.
Mukaihara, T., Nobuaki Hatori, N. Ohnoki, et al.. (1996). Fabrication processes for low threshold InGaAs vertical-cavity surface-emitting lasers. Physica B Condensed Matter. 227(1-4). 400–403. 2 indexed citations
10.
Hatori, Nobuaki, et al.. (1995). A Record Low Threshold InGaAs/GaAlAs Vertical-Cavity Surface-Emitting Laser. PD2–PD2. 3 indexed citations
11.
Hatori, Nobuaki, et al.. (1995). 0.33-mA-threshold InGaAs/GaAs vertical-cavity surface-emitting lasers grown by MOCVD. Tokyo Tech Research Repository (Tokyo Institute of Technology). 2 indexed citations
12.
Mukaihara, T., N. Ohnoki, Y. Hayashi, et al.. (1995). Excess intensity noise originated from polarization fluctuation in vertical-cavity surface-emitting lasers. IEEE Photonics Technology Letters. 7(10). 1113–1115. 42 indexed citations
13.
Hayashi, Yusuke, T. Mukaihara, Nobuaki Hatori, et al.. (1995). Lasing characteristics of low-threshold oxide confinement InGaAs-GaAlAs vertical-cavity surface-emitting lasers. IEEE Photonics Technology Letters. 7(11). 1234–1236. 33 indexed citations
14.
Koyama, Fumio, T. Mukaihara, Yusuke Hayashi, et al.. (1995). Wavelength control of vertical cavity surface-emitting lasers by using nonplanar MOCVD. IEEE Photonics Technology Letters. 7(1). 10–12. 30 indexed citations
15.
Mukaihara, T., Yusuke Hayashi, Nobuaki Hatori, et al.. (1995). Low-threshold mesa-etched vertical-cavity InGaAs/GaAssurface-emitting lasers grown by MOCVD. Electronics Letters. 31(8). 647–648. 4 indexed citations
16.
Hayashi, Yusuke, T. Mukaihara, Nobuaki Hatori, et al.. (1995). Record low-threshold index-guided InGaAs/GaAlAsvertical-cavitysurface-emitting laser with a native oxide confinement structure. Electronics Letters. 31(7). 560–562. 108 indexed citations
17.
Mukaihara, T., N. Ohnoki, Yusuke Hayashi, et al.. (1995). Polarization control of vertical-cavity surface emitting lasers using a birefringent metal/dielectric polarizer loaded on top distributed Bragg reflector. IEEE Journal of Selected Topics in Quantum Electronics. 1(2). 667–673. 72 indexed citations
18.
Mukaihara, T., N. Ohnoki, Toshihiko Baba, Fumio Koyama, & Kenichi Iga. (1994). A Novel Birefringent Distributed Bragg Reflector Using a Metal/Dielectric Polarizer for Polarization Control of Surface-Emitting Lasers. Japanese Journal of Applied Physics. 33(2B). L227–L227. 11 indexed citations
19.
Mukaihara, T., et al.. (1994). Dynamic wavelength shift of vertical-cavity surface-emittinglasers. Electronics Letters. 30(20). 1677–1678. 3 indexed citations
20.
Koyama, Fumio, et al.. (1994). Two-dimensional multiwavelength surface emittinglaser arraysfabricated by nonplanar MOCVD. Electronics Letters. 30(23). 1947–1948. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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