N. E. B. Cowern

2.2k total citations
103 papers, 1.8k citations indexed

About

N. E. B. Cowern is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Computational Mechanics. According to data from OpenAlex, N. E. B. Cowern has authored 103 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 79 papers in Atomic and Molecular Physics, and Optics, 73 papers in Electrical and Electronic Engineering and 29 papers in Computational Mechanics. Recurrent topics in N. E. B. Cowern's work include Silicon and Solar Cell Technologies (70 papers), Semiconductor materials and interfaces (54 papers) and Ion-surface interactions and analysis (29 papers). N. E. B. Cowern is often cited by papers focused on Silicon and Solar Cell Technologies (70 papers), Semiconductor materials and interfaces (54 papers) and Ion-surface interactions and analysis (29 papers). N. E. B. Cowern collaborates with scholars based in United Kingdom, Netherlands and France. N. E. B. Cowern's co-authors include D. J. Gravesteijn, C.J. Sofield, H.F.F. Jos, K.T.F. Janssen, P. C. Zalm, W.B. de Boer, G. F. A. van de Walle, P. van der Sluis, J.M. Freeman and A. Claverie and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. E. B. Cowern

101 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. E. B. Cowern United Kingdom 24 1.4k 1.0k 519 332 169 103 1.8k
F. H. Eisen United States 26 1.3k 1.0× 802 0.8× 696 1.3× 424 1.3× 189 1.1× 68 1.8k
M. Bianconi Italy 20 988 0.7× 531 0.5× 612 1.2× 371 1.1× 194 1.1× 103 1.4k
J. Comas United States 20 1.0k 0.7× 1.0k 1.0× 287 0.6× 383 1.2× 49 0.3× 76 1.6k
G. G. Bentini Italy 20 794 0.6× 594 0.6× 411 0.8× 286 0.9× 112 0.7× 76 1.2k
D. J. Oostra Netherlands 18 530 0.4× 419 0.4× 414 0.8× 329 1.0× 78 0.5× 35 951
K.M. Horn United States 23 879 0.6× 714 0.7× 322 0.6× 693 2.1× 172 1.0× 53 1.8k
S. R. Wilson United States 19 965 0.7× 357 0.4× 382 0.7× 409 1.2× 111 0.7× 92 1.4k
B.M. Paine United States 18 657 0.5× 312 0.3× 631 1.2× 407 1.2× 139 0.8× 46 1.1k
K. Gärtner Germany 19 600 0.4× 266 0.3× 506 1.0× 421 1.3× 85 0.5× 81 1.1k
H. Pattyn Belgium 17 360 0.3× 462 0.5× 264 0.5× 374 1.1× 102 0.6× 128 1.0k

Countries citing papers authored by N. E. B. Cowern

Since Specialization
Citations

This map shows the geographic impact of N. E. B. Cowern's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. E. B. Cowern with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. E. B. Cowern more than expected).

Fields of papers citing papers by N. E. B. Cowern

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. E. B. Cowern. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. E. B. Cowern. The network helps show where N. E. B. Cowern may publish in the future.

Co-authorship network of co-authors of N. E. B. Cowern

This figure shows the co-authorship network connecting the top 25 collaborators of N. E. B. Cowern. A scholar is included among the top collaborators of N. E. B. Cowern based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. E. B. Cowern. N. E. B. Cowern is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pawlak, Bartek, et al.. (2014). Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si. Applied Physics Letters. 105(22). 1 indexed citations
2.
Cowern, N. E. B., S. I. Simdyankin, Nick S. Bennett, et al.. (2013). Extended Point Defects in Crystalline Materials: Ge and Si. Physical Review Letters. 110(15). 155501–155501. 33 indexed citations
3.
Pichler, P., C.J. Ortiz, B. Colombeau, et al.. (2006). Diffusion and activation of dopants in silicon and advanced silicon-based materials. HAL (Le Centre pour la Communication Scientifique Directe). 3 indexed citations
4.
Cristiano, F., Simona Boninelli, N. Cherkashin, et al.. (2006). Defects evolution and dopant activation anomalies in ion implanted silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 253(1-2). 68–79. 11 indexed citations
5.
Xu, Lu, P.J. McNally, N. E. B. Cowern, et al.. (2005). Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001). Journal of Materials Science Materials in Electronics. 16(7). 469–474. 1 indexed citations
6.
Collart, E. J. H., B. Colombeau, M. Bersani, et al.. (2005). Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJ. Materials Science and Engineering B. 124-125. 215–218. 2 indexed citations
7.
Colombeau, B., Andrew J. Smith, N. E. B. Cowern, et al.. (2004). Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions. MRS Proceedings. 810. 31 indexed citations
8.
Willoughby, A. F. W., J. M. Bonar, N. E. B. Cowern, R. J. H. Morris, & Monica Bollani. (2003). Diffusion of Boron in Germanium and Si1-xGex (x>50%) alloys Suresh Uppal. MRS Proceedings. 765. 2 indexed citations
9.
Cowern, N. E. B., B. Colombeau, F. Roozeboom, et al.. (2002). Diffusion Suppression in Silicon by Substitutional C Doping. 203–206. 3 indexed citations
10.
Collart, E. J. H., et al.. (1998). Low energy boron implantation in silicon and room temperature diffusion. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 139(1-4). 98–107. 17 indexed citations
11.
Mishin, Y., G. Vogl, N. E. B. Cowern, C. Richard A. Catlow, & Diana Farkas. (1998). Diffusion mechanisms in crystalline materials. Materials Research Society symposium proceedings Volume 527. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations
12.
Hueting, R.J.E., J.W. Slotboom, A. Pruijmboom, et al.. (1996). On the optimization of SiGe-base bipolar transistors. IEEE Transactions on Electron Devices. 43(9). 1518–1524. 35 indexed citations
13.
Cowern, N. E. B.. (1994). Interstitial traps and diffusion in epitaxial silicon films. Applied Physics Letters. 64(20). 2646–2648. 46 indexed citations
14.
Cowern, N. E. B.. (1988). General model for intrinsic dopant diffusion in silicon under nonequilibrium point-defect conditions. Journal of Applied Physics. 64(9). 4484–4490. 20 indexed citations
15.
Bridwell, L.B., et al.. (1986). Measurement of polarization, bloch and charge exchange contributions to the stopping power of C and O ions in carbon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 13(1-3). 123–126. 17 indexed citations
16.
Cowern, N. E. B., et al.. (1984). Charge-changing energy loss, higher-orderZ1dependence, and pre-equilibrium behavior in the stopping power for energetic ions in solids. Physical review. A, General physics. 30(4). 1682–1691. 40 indexed citations
17.
Cowern, N. E. B.. (1983). Projected range distributions of low-, intermediate-, and high-energy ions. Nuclear Instruments and Methods in Physics Research. 206(3). 599–607. 4 indexed citations
18.
Cowern, N. E. B. & J.P. Biersack. (1983). Comparison of theoretical evaluations of energetic ion range distributions. Nuclear Instruments and Methods in Physics Research. 205(1-2). 347–349. 3 indexed citations
19.
Cowern, N. E. B., Clifton Woods, & C.J. Sofield. (1983). The gas-solid density effect for MeV/u ions: Charge changing cross sections and the effective charge. Nuclear Instruments and Methods in Physics Research. 216(1-2). 287–292. 13 indexed citations
20.
Sofield, C.J., N. E. B. Cowern, & J.M. Freeman. (1980). Charge-exchange effects in energy-loss straggling. Nuclear Instruments and Methods. 170(1-3). 221–225. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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