Matteo Farronato

827 total citations
19 papers, 348 citations indexed

About

Matteo Farronato is a scholar working on Electrical and Electronic Engineering, Artificial Intelligence and Cognitive Neuroscience. According to data from OpenAlex, Matteo Farronato has authored 19 papers receiving a total of 348 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 6 papers in Artificial Intelligence and 5 papers in Cognitive Neuroscience. Recurrent topics in Matteo Farronato's work include Advanced Memory and Neural Computing (17 papers), Ferroelectric and Negative Capacitance Devices (9 papers) and Neural dynamics and brain function (4 papers). Matteo Farronato is often cited by papers focused on Advanced Memory and Neural Computing (17 papers), Ferroelectric and Negative Capacitance Devices (9 papers) and Neural dynamics and brain function (4 papers). Matteo Farronato collaborates with scholars based in Italy, China and Taiwan. Matteo Farronato's co-authors include Daniele Ielmini, Saverio Ricci, Piergiulio Mannocci, Wei Wang, Erika Covi, Alessandro Milozzi, Christian Monzio Compagnoni, Yu‐Hsuan Lin, Elia Ambrosi and Shahin Hashemkhani and has published in prestigious journals such as Advanced Materials, SHILAP Revista de lepidopterología and Science Advances.

In The Last Decade

Matteo Farronato

18 papers receiving 339 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Matteo Farronato Italy 9 325 96 89 73 48 19 348
Janguk Han South Korea 10 395 1.2× 120 1.3× 180 2.0× 100 1.4× 26 0.5× 29 431
Hanchan Song South Korea 12 456 1.4× 214 2.2× 84 0.9× 71 1.0× 29 0.6× 27 480
Jangsaeng Kim South Korea 10 304 0.9× 76 0.8× 82 0.9× 50 0.7× 29 0.6× 44 328
Yixuan Jiao China 4 375 1.2× 187 1.9× 75 0.8× 44 0.6× 45 0.9× 6 393
Mamathamba Kalishettyhalli Mahadevaiah Germany 13 577 1.8× 214 2.2× 70 0.8× 60 0.8× 45 0.9× 33 592
Alexander H. Hsia United States 7 419 1.3× 117 1.2× 107 1.2× 38 0.5× 24 0.5× 11 460
Piergiulio Mannocci Italy 11 316 1.0× 60 0.6× 131 1.5× 35 0.5× 31 0.6× 26 351
Benedikt Kersting Switzerland 11 242 0.7× 53 0.6× 83 0.9× 32 0.4× 95 2.0× 20 263
Yann Beilliard Canada 9 325 1.0× 88 0.9× 60 0.7× 34 0.5× 32 0.7× 28 352

Countries citing papers authored by Matteo Farronato

Since Specialization
Citations

This map shows the geographic impact of Matteo Farronato's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Matteo Farronato with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Matteo Farronato more than expected).

Fields of papers citing papers by Matteo Farronato

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Matteo Farronato. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Matteo Farronato. The network helps show where Matteo Farronato may publish in the future.

Co-authorship network of co-authors of Matteo Farronato

This figure shows the co-authorship network connecting the top 25 collaborators of Matteo Farronato. A scholar is included among the top collaborators of Matteo Farronato based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Matteo Farronato. Matteo Farronato is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Farronato, Matteo, Piergiulio Mannocci, Alessandro Milozzi, et al.. (2025). Seizure detection via reservoir computing in MoS 2 -based charge trap memory devices. Science Advances. 11(3). eadr3241–eadr3241. 5 indexed citations
2.
Zhang, Teng, Stanisław Woźniak, Syed Ghazi Sarwat, et al.. (2025). Emerging Materials and Computing Paradigms for Temporal Signal Analysis. Advanced Materials. 37(12). e2408566–e2408566. 4 indexed citations
3.
Mannocci, Piergiulio, Saverio Ricci, Matteo Farronato, et al.. (2025). 3-D Vertical Resistive Switching Random Access Memory (3D-VRRAM) With Multilevel Programming for High-Density, Energy-Efficient In-Memory Computing. IEEE Transactions on Electron Devices. 72(5). 2677–2684.
4.
Mannocci, Piergiulio, Saverio Ricci, Matteo Farronato, et al.. (2024). High-Density Multilevel 3D Vertical Resistive Switching Memory (VRRAM) for Massively Parallel in-Memory Computing. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 1–4. 1 indexed citations
5.
Farronato, Matteo, et al.. (2024). Low-energy, high-accuracy convolutional network inference in 3D crosspoint (3DXP) arrays. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 412–415. 1 indexed citations
6.
Ricci, Saverio, et al.. (2024). Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling. IEEE Transactions on Electron Devices. 71(5). 3246–3251. 7 indexed citations
7.
Ricci, Saverio, et al.. (2024). Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study. IEEE Transactions on Electron Devices. 71(5). 3240–3245. 6 indexed citations
8.
Mannocci, Piergiulio, et al.. (2023). In-memory computing with emerging memory devices: Status and outlook. SHILAP Revista de lepidopterología. 1(1). 64 indexed citations
9.
Farronato, Matteo, et al.. (2023). In-Memory Computing for Machine Learning and Deep Learning. IEEE Journal of the Electron Devices Society. 11. 587–601. 11 indexed citations
10.
Farronato, Matteo, et al.. (2022). Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration. Advanced Electronic Materials. 8(8). 29 indexed citations
11.
Ricci, Saverio, Piergiulio Mannocci, Matteo Farronato, Shahin Hashemkhani, & Daniele Ielmini. (2022). Forming‐Free Resistive Switching Memory Crosspoint Arrays for In‐Memory Machine Learning. SHILAP Revista de lepidopterología. 4(8). 18 indexed citations
12.
Farronato, Matteo, et al.. (2022). Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 1–4. 5 indexed citations
13.
Farronato, Matteo, Margherita Melegari, Saverio Ricci, et al.. (2022). Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration (Adv. Electron. Mater. 8/2022). Advanced Electronic Materials. 8(8). 2 indexed citations
14.
Wang, Yuhao, Tiancheng Gong, Yaxin Ding, et al.. (2022). Redox memristors with volatile threshold switching behavior for neuromorphic computing. Journal of Electronic Science and Technology. 20(4). 100177–100177. 9 indexed citations
15.
Farronato, Matteo, et al.. (2022). Reservoir Computing with Charge‐Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering. Advanced Materials. 35(37). e2205381–e2205381. 60 indexed citations
16.
Mannocci, Piergiulio, et al.. (2022). In-memory computing with emerging memory devices: status and outlook. Zenodo (CERN European Organization for Nuclear Research). 4 indexed citations
17.
Wang, Wei, Erika Covi, Yu‐Hsuan Lin, et al.. (2021). Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part II: Mechanism and Modeling. IEEE Transactions on Electron Devices. 68(9). 4342–4349. 37 indexed citations
18.
Covi, Erika, Wei Wang, Yu‐Hsuan Lin, et al.. (2021). Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization. IEEE Transactions on Electron Devices. 68(9). 4335–4341. 33 indexed citations
19.
Wang, Wei, Erika Covi, Alessandro Milozzi, et al.. (2020). Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories. SHILAP Revista de lepidopterología. 3(4). 52 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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