Martin Heilmann

765 total citations
31 papers, 643 citations indexed

About

Martin Heilmann is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Martin Heilmann has authored 31 papers receiving a total of 643 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Condensed Matter Physics, 21 papers in Materials Chemistry and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Martin Heilmann's work include GaN-based semiconductor devices and materials (21 papers), Ga2O3 and related materials (13 papers) and ZnO doping and properties (13 papers). Martin Heilmann is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Ga2O3 and related materials (13 papers) and ZnO doping and properties (13 papers). Martin Heilmann collaborates with scholars based in Germany, Australia and Brazil. Martin Heilmann's co-authors include Silke Christiansen, Christian Tessarek, George Sarau, Michael Latzel, J. M. J. Lopes, Muhammad Y. Bashouti, C. Dieker, Erdmann Spiecker, Manuela Göbelt and Gavin Conibeer and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Martin Heilmann

30 papers receiving 630 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Martin Heilmann Germany 17 436 349 255 197 168 31 643
S. Miasojedovas Lithuania 13 289 0.7× 249 0.7× 122 0.5× 291 1.5× 70 0.4× 59 540
Elías Muñoz Spain 10 187 0.4× 218 0.6× 211 0.8× 188 1.0× 108 0.6× 21 402
Junyong Kang China 13 375 0.9× 92 0.3× 212 0.8× 204 1.0× 110 0.7× 49 506
C. F. Lo United States 14 219 0.5× 366 1.0× 185 0.7× 472 2.4× 78 0.5× 30 608
Junjun Xue China 16 434 1.0× 262 0.8× 310 1.2× 380 1.9× 144 0.9× 67 735
Víctor J. Gómez Spain 12 173 0.4× 232 0.7× 125 0.5× 155 0.8× 114 0.7× 31 414
Sheng-Wen Wang Taiwan 9 234 0.5× 152 0.4× 106 0.4× 181 0.9× 121 0.7× 12 380
Jun Du China 15 302 0.7× 150 0.4× 362 1.4× 174 0.9× 43 0.3× 63 592
Julian Irwin United States 8 341 0.8× 168 0.5× 330 1.3× 97 0.5× 56 0.3× 11 508
Im Taek Yoon South Korea 11 265 0.6× 97 0.3× 116 0.5× 158 0.8× 64 0.4× 61 365

Countries citing papers authored by Martin Heilmann

Since Specialization
Citations

This map shows the geographic impact of Martin Heilmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Martin Heilmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Martin Heilmann more than expected).

Fields of papers citing papers by Martin Heilmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Martin Heilmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Martin Heilmann. The network helps show where Martin Heilmann may publish in the future.

Co-authorship network of co-authors of Martin Heilmann

This figure shows the co-authorship network connecting the top 25 collaborators of Martin Heilmann. A scholar is included among the top collaborators of Martin Heilmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Martin Heilmann. Martin Heilmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Heilmann, Martin, et al.. (2021). Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam. npj 2D Materials and Applications. 5(1). 17 indexed citations
2.
Nunes, Eduardo H.M., et al.. (2020). Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001). Nanotechnology. 32(14). 145707–145707. 2 indexed citations
3.
Heilmann, Martin, et al.. (2020). Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures. ACS Applied Materials & Interfaces. 12(7). 8897–8907. 15 indexed citations
4.
Papadogianni, Alexandra, Martin Heilmann, Hossain Milani Moghaddam, et al.. (2020). Conduction mechanisms in epitaxial NiO/Graphene gas sensors. Sensors and Actuators B Chemical. 325. 128797–128797. 18 indexed citations
5.
Sarau, George, Martin Heilmann, Michael Latzel, Christian Tessarek, & Silke Christiansen. (2019). GaN‐Based Nanorods/Graphene Heterostructures for Optoelectronic Applications. physica status solidi (b). 256(4). 3 indexed citations
6.
Munshi, A. Mazid, Dong-Chul Kim, Martin Heilmann, et al.. (2018). Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy. Applied Physics Letters. 113(26). 15 indexed citations
7.
Tessarek, Christian, Marco Schowalter, Toon Coenen, et al.. (2018). Spatially resolved luminescence properties of non- and semi-polar InGaN quantum wells on GaN microrods. Journal of Physics D Applied Physics. 51(35). 355102–355102. 1 indexed citations
8.
Soares, G. V., et al.. (2018). Growth of boron-doped few-layer graphene by molecular beam epitaxy. Applied Physics Letters. 112(16). 17 indexed citations
9.
Tessarek, Christian, et al.. (2017). Understanding GaN/InGaN core–shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods. Nanotechnology. 28(48). 485601–485601. 7 indexed citations
10.
Sarau, George, Martin Heilmann, Muhammad Y. Bashouti, et al.. (2017). Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures. ACS Applied Materials & Interfaces. 9(11). 10003–10011. 43 indexed citations
11.
Zhang, Yi, Murad J. Y. Tayebjee, Miroslav Dvořák, et al.. (2016). Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitation. Applied Physics Letters. 108(13). 22 indexed citations
12.
Kumar, Ashutosh, Martin Heilmann, Michael Latzel, et al.. (2016). Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes. Scientific Reports. 6(1). 27553–27553. 38 indexed citations
13.
Sarau, George, Katja Höflich, Martin Heilmann, et al.. (2016). Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation. Nanotechnology. 28(5). 55201–55201. 23 indexed citations
14.
Heilmann, Martin, A. Mazid Munshi, George Sarau, et al.. (2016). Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer. Nano Letters. 16(6). 3524–3532. 74 indexed citations
15.
Kumar, Mukesh, George Sarau, Martin Heilmann, et al.. (2016). Effect of ammonification temperature on the formation of coaxial GaN/Ga2O3nanowires. Journal of Physics D Applied Physics. 50(3). 35302–35302. 11 indexed citations
16.
Chen, Weijian, Xiaoming Wen, Michael Latzel, et al.. (2016). Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods. ACS Applied Materials & Interfaces. 8(46). 31887–31893. 29 indexed citations
17.
Wen, Xiaoming, Michael Latzel, Martin Heilmann, et al.. (2015). Fabrication and optical characterisation of InGaN/GaN nanorods. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9668. 96680F–96680F.
18.
Tessarek, Christian, Robert Röder, Sebastian Geburt, et al.. (2014). Improving the Optical Properties of Self-Catalyzed GaN Microrods toward Whispering Gallery Mode Lasing. ACS Photonics. 1(10). 990–997. 32 indexed citations
19.
Tessarek, Christian, Martin Heilmann, H. Hardtdegen, et al.. (2014). The Role of Si during the Growth of GaN Micro- and Nanorods. Crystal Growth & Design. 14(3). 1486–1492. 67 indexed citations
20.
Sarau, George, Martin Heilmann, Michael Latzel, & Silke Christiansen. (2014). Disentangling the effects of nanoscale structural variations on the light emission wavelength of single nano-emitters: InGaN/GaN multiquantum well nano-LEDs for a case study. Nanoscale. 6(20). 11953–11962. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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