Mark Kiehlbauch

568 total citations
17 papers, 474 citations indexed

About

Mark Kiehlbauch is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Industrial and Manufacturing Engineering. According to data from OpenAlex, Mark Kiehlbauch has authored 17 papers receiving a total of 474 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 9 papers in Mechanics of Materials and 3 papers in Industrial and Manufacturing Engineering. Recurrent topics in Mark Kiehlbauch's work include Plasma Diagnostics and Applications (11 papers), Metal and Thin Film Mechanics (9 papers) and Semiconductor materials and devices (8 papers). Mark Kiehlbauch is often cited by papers focused on Plasma Diagnostics and Applications (11 papers), Metal and Thin Film Mechanics (9 papers) and Semiconductor materials and devices (8 papers). Mark Kiehlbauch collaborates with scholars based in United States. Mark Kiehlbauch's co-authors include David B. Graves, Eray S. Aydil, Sergi Gomez, A. Fiala, D. N. Ruzic, Gary S. May, G.S. May, Wenyu Xu and N. R. Rueger and has published in prestigious journals such as Journal of Applied Physics, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and IEEE Transactions on Semiconductor Manufacturing.

In The Last Decade

Mark Kiehlbauch

17 papers receiving 449 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mark Kiehlbauch United States 12 416 150 100 84 75 17 474
Scott T. McCain United States 8 153 0.4× 24 0.2× 127 1.3× 46 0.5× 95 1.3× 16 368
K. Tokashiki Japan 10 328 0.8× 93 0.6× 19 0.2× 137 1.6× 40 0.5× 31 370
Günther Hannesschläger Austria 8 145 0.3× 30 0.2× 29 0.3× 28 0.3× 214 2.9× 16 463
Kazuaki Hotta Japan 8 329 0.8× 33 0.2× 14 0.1× 177 2.1× 47 0.6× 32 378
You Wang China 12 343 0.8× 13 0.1× 18 0.2× 35 0.4× 65 0.9× 60 477
Se-Jin Oh South Korea 9 167 0.4× 62 0.4× 14 0.1× 79 0.9× 26 0.3× 20 229
Junxia Ran China 13 385 0.9× 32 0.2× 392 3.9× 48 0.6× 15 0.2× 49 466
Wei Jia China 11 275 0.7× 12 0.1× 18 0.2× 142 1.7× 33 0.4× 45 367
M. Butcher United States 7 365 0.9× 11 0.1× 52 0.5× 229 2.7× 23 0.3× 21 407
А. М. Ефремов Russia 14 365 0.9× 43 0.3× 90 0.9× 21 0.3× 16 0.2× 66 509

Countries citing papers authored by Mark Kiehlbauch

Since Specialization
Citations

This map shows the geographic impact of Mark Kiehlbauch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mark Kiehlbauch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mark Kiehlbauch more than expected).

Fields of papers citing papers by Mark Kiehlbauch

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mark Kiehlbauch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mark Kiehlbauch. The network helps show where Mark Kiehlbauch may publish in the future.

Co-authorship network of co-authors of Mark Kiehlbauch

This figure shows the co-authorship network connecting the top 25 collaborators of Mark Kiehlbauch. A scholar is included among the top collaborators of Mark Kiehlbauch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mark Kiehlbauch. Mark Kiehlbauch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Ruzic, D. N., et al.. (2014). Etching mechanism of the single-step through-silicon-via dry etch using SF6/C4F8 chemistry. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 32(4). 23 indexed citations
2.
Xu, Wenyu, et al.. (2014). Finite-element simulation models and experimental verification for through-silicon-via etching: Bosch process and single-step etching. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 32(4). 6 indexed citations
3.
Rueger, N. R., et al.. (2013). Patterning and etch challenges for future DRAM and other high aspect ratio memory device fabrication. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8685. 86850E–86850E. 2 indexed citations
4.
May, Gary S., et al.. (2011). Neural Network Modeling for Advanced Process Control Using Production Data. IEEE Transactions on Semiconductor Manufacturing. 24(2). 182–189. 16 indexed citations
5.
May, G.S., et al.. (2011). Neural network modeling of fabrication yield using manufacturing data. 15. 1–6. 4 indexed citations
6.
May, G.S., et al.. (2010). Neural networks for advanced process control. 36. 137–142. 4 indexed citations
7.
Gomez, Sergi, et al.. (2006). Feature scale model of Si etching in SF6∕O2∕HBr plasma and comparison with experiments. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 24(2). 350–361. 21 indexed citations
8.
Gomez, Sergi, et al.. (2006). In situ measurement of the ion incidence angle dependence of the ion-enhanced etching yield in plasma reactors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 24(6). 2176–2186. 11 indexed citations
9.
Gomez, Sergi, et al.. (2005). Feature-scale model of Si etching in SF6∕O2 plasma and comparison with experiments. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 23(5). 1430–1439. 41 indexed citations
10.
Gomez, Sergi, et al.. (2005). Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 23(6). 1592–1597. 16 indexed citations
11.
Gomez, Sergi, et al.. (2004). Feature-scale model of Si etching in SF6 plasma and comparison with experiments. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 23(1). 99–113. 39 indexed citations
12.
Gomez, Sergi, et al.. (2004). Etching of high aspect ratio structures in Si using SF6/O2 plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(3). 606–615. 80 indexed citations
13.
Kiehlbauch, Mark & David B. Graves. (2003). Inductively coupled plasmas in oxygen: Modeling and experiment. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 21(3). 660–670. 57 indexed citations
14.
Kiehlbauch, Mark & David B. Graves. (2002). Effect of neutral transport on the etch product lifecycle during plasma etching of silicon in chlorine gas. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 21(1). 116–126. 19 indexed citations
15.
Kiehlbauch, Mark & David B. Graves. (2002). Modeling argon inductively coupled plasmas: The electron energy distribution function and metastable kinetics. Journal of Applied Physics. 91(6). 3539–3546. 58 indexed citations
16.
Kiehlbauch, Mark & David B. Graves. (2001). Temperature resolved modeling of plasma abatement of perfluorinated compounds. Journal of Applied Physics. 89(4). 2047–2057. 48 indexed citations
17.
Fiala, A., et al.. (1999). Model of point-of-use plasma abatement of perfluorinated compounds with an inductively coupled plasma. Journal of Applied Physics. 86(1). 152–162. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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