Maksim Andreev

633 total citations
13 papers, 517 citations indexed

About

Maksim Andreev is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Maksim Andreev has authored 13 papers receiving a total of 517 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Maksim Andreev's work include Advanced Memory and Neural Computing (6 papers), Graphene research and applications (5 papers) and 2D Materials and Applications (5 papers). Maksim Andreev is often cited by papers focused on Advanced Memory and Neural Computing (6 papers), Graphene research and applications (5 papers) and 2D Materials and Applications (5 papers). Maksim Andreev collaborates with scholars based in South Korea, United States and United Kingdom. Maksim Andreev's co-authors include Jin‐Hong Park, Kil‐Su Jung, Seunghwan Seo, Sooyoung Jung, Jaewoo Shim, Ki Seok Kim, Keun Heo, Jae‐Woong Choi, Hyeongjun Kim and Joo‐Ho Lee and has published in prestigious journals such as Advanced Materials, ACS Nano and Advanced Functional Materials.

In The Last Decade

Maksim Andreev

12 papers receiving 513 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Maksim Andreev South Korea 9 447 245 70 64 64 13 517
Kil‐Su Jung South Korea 7 370 0.8× 184 0.8× 69 1.0× 53 0.8× 47 0.7× 12 429
Che‐Yi Lin Taiwan 13 493 1.1× 436 1.8× 80 1.1× 49 0.8× 114 1.8× 20 660
Weijie Wang Singapore 13 330 0.7× 190 0.8× 48 0.7× 30 0.5× 92 1.4× 41 426
Doyoon Lee South Korea 6 342 0.8× 225 0.9× 121 1.7× 36 0.6× 61 1.0× 14 482
Fernando Aguirre Argentina 12 493 1.1× 141 0.6× 143 2.0× 31 0.5× 46 0.7× 56 571
Shosuke Fujii Japan 15 706 1.6× 238 1.0× 51 0.7× 18 0.3× 55 0.9× 53 748
Ui Yeon Won South Korea 11 322 0.7× 350 1.4× 61 0.9× 40 0.6× 118 1.8× 14 514
Serge Ecoffey Canada 10 410 0.9× 77 0.3× 86 1.2× 88 1.4× 119 1.9× 60 487
Giuseppe Carnicella United Kingdom 8 303 0.7× 206 0.8× 33 0.5× 76 1.2× 37 0.6× 10 398

Countries citing papers authored by Maksim Andreev

Since Specialization
Citations

This map shows the geographic impact of Maksim Andreev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maksim Andreev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maksim Andreev more than expected).

Fields of papers citing papers by Maksim Andreev

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maksim Andreev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maksim Andreev. The network helps show where Maksim Andreev may publish in the future.

Co-authorship network of co-authors of Maksim Andreev

This figure shows the co-authorship network connecting the top 25 collaborators of Maksim Andreev. A scholar is included among the top collaborators of Maksim Andreev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Maksim Andreev. Maksim Andreev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
2.
Seo, Seunghwan, Kil‐Su Jung, Maksim Andreev, et al.. (2022). A Van Der Waals Reconfigurable Multi‐Valued Logic Device and Circuit Based on Tunable Negative‐Differential‐Resistance Phenomenon. Advanced Materials. 34(36). e2202799–e2202799. 44 indexed citations
3.
Kim, Kwan‐Ho, Maksim Andreev, Jaewoo Shim, et al.. (2022). High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective Contacts. ACS Nano. 16(6). 8827–8836. 42 indexed citations
4.
Andreev, Maksim, Seunghwan Seo, Kil‐Su Jung, & Jin‐Hong Park. (2022). Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices. Advanced Materials. 34(51). e2108830–e2108830. 48 indexed citations
5.
Seo, Seunghwan, Je‐Jun Lee, Tae Hyung Kim, et al.. (2021). An Optogenetics‐Inspired Flexible van der Waals Optoelectronic Synapse and its Application to a Convolutional Neural Network. Advanced Materials. 33(40). e2102980–e2102980. 134 indexed citations
6.
Seo, Seunghwan, Je‐Jun Lee, Tae Hyung Kim, et al.. (2021). An Optogenetics‐Inspired Flexible van der Waals Optoelectronic Synapse and its Application to a Convolutional Neural Network (Adv. Mater. 40/2021). Advanced Materials. 33(40). 5 indexed citations
7.
Seo, Seunghwan, Jae‐Woong Choi, Keun Heo, et al.. (2021). Controllable potential barrier for multiple negative-differential-transconductance and its application to multi-valued logic computing. npj 2D Materials and Applications. 5(1). 30 indexed citations
8.
Jung, Kil‐Su, Keun Heo, Maksim Andreev, et al.. (2020). Negative Differential Resistance: Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure (Adv. Sci. 19/2020). Advanced Science. 7(19). 2 indexed citations
9.
Jung, Kil‐Su, Keun Heo, Maksim Andreev, et al.. (2020). Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure. Advanced Science. 7(19). 2000991–2000991. 45 indexed citations
10.
Andreev, Maksim, Jae‐Woong Choi, Hyeongjun Kim, et al.. (2020). Negative differential transconductance device with a stepped gate dielectric for multi-valued logic circuits. Nanoscale Horizons. 5(10). 1378–1385. 35 indexed citations
11.
Park, Hyung‐Youl, Jaewoo Shim, Gicheol Shin, et al.. (2020). A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory. Nanoscale Horizons. 5(4). 654–662. 82 indexed citations
12.
Shim, Jaewoo, Gicheol Shin, Hyeongjun Kim, et al.. (2019). Double Negative Differential Transconductance Characteristic: From Device to Circuit Application toward Quaternary Inverter. Advanced Functional Materials. 29(48). 49 indexed citations
13.
Andreev, Maksim, et al.. (2007). Deep-level trapping centers in heterostructures for GaN field-effect transistors. Journal of Communications Technology and Electronics. 52(7). 819–825. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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