Che‐Yi Lin

839 total citations
20 papers, 660 citations indexed

About

Che‐Yi Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Che‐Yi Lin has authored 20 papers receiving a total of 660 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 5 papers in Biomedical Engineering. Recurrent topics in Che‐Yi Lin's work include 2D Materials and Applications (12 papers), Graphene research and applications (8 papers) and MXene and MAX Phase Materials (8 papers). Che‐Yi Lin is often cited by papers focused on 2D Materials and Applications (12 papers), Graphene research and applications (8 papers) and MXene and MAX Phase Materials (8 papers). Che‐Yi Lin collaborates with scholars based in Taiwan, China and Japan. Che‐Yi Lin's co-authors include Yen‐Fu Lin, Shih‐Hsien Yang, Chenhsin Lien, Mengjiao Li, Yuan‐Ming Chang, Feng‐Shou Yang, Ching‐Hwa Ho, Wenwu Li, Keiji Ueno and Kazuhito Tsukagoshi and has published in prestigious journals such as Advanced Materials, Advanced Functional Materials and Scientific Reports.

In The Last Decade

Che‐Yi Lin

19 papers receiving 658 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Che‐Yi Lin Taiwan	13	493	436	114	80	53	20	660
Joseph R. Nasr United States	11	407 0.8×	383 0.9×	90 0.8×	90 1.1×	37 0.7×	14	576
Guilherme Migliato Marega Switzerland	9	467 0.9×	381 0.9×	88 0.8×	56 0.7×	46 0.9×	12	656
June Park South Korea	14	482 1.0×	349 0.8×	92 0.8×	108 1.4×	81 1.5×	19	634
Ko‐Chun Lee Taiwan	8	514 1.0×	410 0.9×	84 0.7×	90 1.1×	53 1.0×	12	626
Manh‐Ha Doan South Korea	10	426 0.9×	476 1.1×	117 1.0×	53 0.7×	38 0.7×	24	643
Songman Ju China	11	528 1.1×	371 0.9×	126 1.1×	112 1.4×	120 2.3×	16	674
Minh Dao Tran South Korea	12	406 0.8×	493 1.1×	107 0.9×	48 0.6×	36 0.7×	15	646
Jia Yang China	15	530 1.1×	433 1.0×	110 1.0×	68 0.8×	73 1.4×	35	667
Ui Yeon Won South Korea	11	322 0.7×	350 0.8×	118 1.0×	61 0.8×	47 0.9×	14	514
Xiongfei Song China	8	444 0.9×	443 1.0×	71 0.6×	62 0.8×	56 1.1×	9	630

Countries citing papers authored by Che‐Yi Lin

Since Specialization

Citations

This map shows the geographic impact of Che‐Yi Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Che‐Yi Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Che‐Yi Lin more than expected).

Fields of papers citing papers by Che‐Yi Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Che‐Yi Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Che‐Yi Lin. The network helps show where Che‐Yi Lin may publish in the future.

Co-authorship network of co-authors of Che‐Yi Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Che‐Yi Lin. A scholar is included among the top collaborators of Che‐Yi Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Che‐Yi Lin. Che‐Yi Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lin, Che‐Yi, Feng‐Shou Yang, Mengjiao Li, et al.. (2023). A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping. Nature Electronics. 6(10). 755–764. 85 indexed citations

Lin, Che‐Yi, Feng‐Shou Yang, Mengjiao Li, et al.. (2022). Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering. ACS Applied Materials & Interfaces. 14(36). 41156–41164. 3 indexed citations

Yang, Shih‐Hsien, Che‐Yi Lin, Feng‐Shou Yang, et al.. (2022). Reversible Charge‐Polarity Control for Multioperation‐Mode Transistors Based on van der Waals Heterostructures. Advanced Science. 9(24). e2106016–e2106016. 12 indexed citations

Gao, Caifang, Feng‐Shou Yang, Ko‐Chun Lee, et al.. (2021). Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity. npj 2D Materials and Applications. 5(1). 12 indexed citations

Lee, Ko‐Chun, Shih‐Hsien Yang, Che‐Yi Lin, et al.. (2021). Artificial mechanoreceptor based on van der Waals stacking structure. Matter. 4(5). 1598–1610. 7 indexed citations

Yang, Shih‐Hsien, Feng‐Shou Yang, Hao‐Ling Tang, et al.. (2021). Performance Limits and Potential of Multilayer Graphene–Tungsten Diselenide Heterostructures. Advanced Electronic Materials. 7(12). 2 indexed citations

Gao, Caifang, Che‐Yi Lin, Liangjun Wang, et al.. (2021). Touch-modulated van der Waals heterostructure with self-writing power switch for synaptic simulation. Nano Energy. 91. 106659–106659. 28 indexed citations

Lee, Ko‐Chun, Mengjiao Li, Yu‐Hsiang Chang, et al.. (2020). Inverse paired-pulse facilitation in neuroplasticity based on interface-boosted charge trapping layered electronics. Nano Energy. 77. 105258–105258. 40 indexed citations

Gao, Caifang, Mengjiao Li, Ko‐Chun Lee, et al.. (2020). Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge‐Trap Layered Electronics. Advanced Functional Materials. 31(5). 19 indexed citations

10.

Li, Jiayi, Ko‐Chun Lee, Shih‐Hsien Yang, et al.. (2019). Probing Charge Transport Difference in Parallel and Vertical Layered Electronics with Thin Graphite Source/Drain Contacts. Scientific Reports. 9(1). 20087–20087. 1 indexed citations

11.

Lee, Ko‐Chun, Shih‐Hsien Yang, Yuan‐Ming Chang, et al.. (2019). Analog Circuit Applications Based on All‐2D Ambipolar ReSe₂ Field‐Effect Transistors. Advanced Functional Materials. 29(22). 46 indexed citations

12.

Li, Mengjiao, Feng‐Shou Yang, Yung‐Chi Hsiao, et al.. (2019). Low‐Voltage Operational, Low‐Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics. Advanced Functional Materials. 29(19). 43 indexed citations

13.

Lin, Che‐Yi, Yuan‐Ming Chang, Shih‐Hsien Yang, et al.. (2019). A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications. Small. 15(33). e1900865–e1900865. 2 indexed citations

14.

Yang, Shih‐Hsien, Ko‐Chun Lee, Yuan‐Ming Chang, et al.. (2019). Multifunctional full-visible-spectrum optoelectronics based on a van der Waals heterostructure. Nano Energy. 66. 104107–104107. 34 indexed citations

15.

Yang, Shih‐Hsien, Yong Xu, Che‐Yi Lin, et al.. (2018). Atomically thin van der Waals tunnel field-effect transistors and its potential for applications. Nanotechnology. 30(10). 105201–105201. 21 indexed citations

16.

Chang, Yuan‐Ming, Shih‐Hsien Yang, Che‐Yi Lin, et al.. (2018). Reversible and Precisely Controllable p/n‐Type Doping of MoTe₂ Transistors through Electrothermal Doping. Advanced Materials. 30(13). e1706995–e1706995. 79 indexed citations

17.

Li, Mengjiao, Che‐Yi Lin, Shih‐Hsien Yang, et al.. (2018). High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping. Advanced Materials. 30(44). e1803690–e1803690. 134 indexed citations

18.

Chen, Chang-Hung, Wenwu Li, Yuan‐Ming Chang, et al.. (2018). Negative-Differential-Resistance Devices Achieved by Band-Structure Engineering in Silicene under Periodic Potentials. Physical Review Applied. 10(4). 21 indexed citations

19.

Lin, Yen‐Fu, Yong Xu, Che‐Yi Lin, et al.. (2015). Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors. Advanced Materials. 27(42). 6612–6619. 71 indexed citations

20.

Chen, Wei‐Sheng, Che‐Yi Lin, Deyan Wang, et al.. (2013). High scan speed EBL containing contact hole resists with low defectivity. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8682. 86821X–86821X.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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