A. Keffous

1.0k total citations
88 papers, 906 citations indexed

About

A. Keffous is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Keffous has authored 88 papers receiving a total of 906 indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 56 papers in Materials Chemistry and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Keffous's work include Silicon Nanostructures and Photoluminescence (36 papers), Thin-Film Transistor Technologies (25 papers) and Semiconductor materials and devices (23 papers). A. Keffous is often cited by papers focused on Silicon Nanostructures and Photoluminescence (36 papers), Thin-Film Transistor Technologies (25 papers) and Semiconductor materials and devices (23 papers). A. Keffous collaborates with scholars based in Algeria, France and Austria. A. Keffous's co-authors include H. Menari, N. Gabouze, G. Nezzal, M. Siad, M. Kechouane, L. Guerbous, M. Trari, Toufik Hadjersi, Amar Manseri and T. Kerdja and has published in prestigious journals such as SHILAP Revista de lepidopterología, Journal of Power Sources and Sensors and Actuators B Chemical.

In The Last Decade

A. Keffous

84 papers receiving 869 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Keffous Algeria 17 681 554 207 195 77 88 906
H. Menari Algeria 15 511 0.8× 380 0.7× 134 0.6× 174 0.9× 76 1.0× 71 672
Vincent Oison France 17 427 0.6× 482 0.9× 346 1.7× 264 1.4× 47 0.6× 26 872
Jan Grym Czechia 16 451 0.7× 476 0.9× 233 1.1× 110 0.6× 72 0.9× 76 780
J. Joseph France 17 862 1.3× 548 1.0× 174 0.8× 393 2.0× 63 0.8× 43 1.1k
Sanjeev Kumar United Kingdom 17 462 0.7× 395 0.7× 286 1.4× 250 1.3× 29 0.4× 63 870
Y. Nagasawa Japan 13 639 0.9× 452 0.8× 136 0.7× 240 1.2× 29 0.4× 24 877
Zuanyi Li United States 14 817 1.2× 1.5k 2.7× 282 1.4× 381 2.0× 58 0.8× 17 1.7k
Hugo Romero United States 13 602 0.9× 1.0k 1.9× 304 1.5× 233 1.2× 37 0.5× 17 1.2k
Edmund P. Burte Germany 16 812 1.2× 346 0.6× 92 0.4× 154 0.8× 52 0.7× 132 971
Mahanim Omar Malaysia 2 419 0.6× 423 0.8× 88 0.4× 229 1.2× 25 0.3× 4 700

Countries citing papers authored by A. Keffous

Since Specialization
Citations

This map shows the geographic impact of A. Keffous's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Keffous with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Keffous more than expected).

Fields of papers citing papers by A. Keffous

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Keffous. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Keffous. The network helps show where A. Keffous may publish in the future.

Co-authorship network of co-authors of A. Keffous

This figure shows the co-authorship network connecting the top 25 collaborators of A. Keffous. A scholar is included among the top collaborators of A. Keffous based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Keffous. A. Keffous is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Keffous, A., et al.. (2023). Study and Characterization of LiF Thin Film Combined with a Silicon Detector for Neutron Metrology. Acta Physica Polonica A. 143(5). 400–413.
3.
Keffous, A., et al.. (2018). Impact of porous SiC-doped PVA based LDS layer on electrical parameters of Si solar cells. Optical Materials. 80. 225–232. 11 indexed citations
4.
Keffous, A., et al.. (2017). Elaboration and characterization of electrochemically prepared H+-doped polyaniline/Au/a-SiC:H-based chemical sensor. Journal of Solid State Electrochemistry. 22(4). 1123–1130. 4 indexed citations
5.
Keffous, A., et al.. (2016). Optical and spectroscopic characterizations of Algerian silica raw material to predict high quality solar-grade silicon. Optical Materials. 65. 142–149. 6 indexed citations
6.
Keffous, A., et al.. (2016). Silicon carbide thin films with different processing growth as an alternative for energetic application. Optical Materials. 65. 117–123. 16 indexed citations
7.
Keffous, A., et al.. (2013). Characterization and Quartz Enrichment of the Hoggar Deposit Intended for the Electrometallurgy. SHILAP Revista de lepidopterología. 2 indexed citations
8.
Boudine, B., et al.. (2013). Photoresponse and H2 gas sensing properties of highly oriented Al and Al/Sb doped ZnO thin films. Progress in Natural Science Materials International. 23(6). 519–523. 8 indexed citations
9.
Boumaour, M., et al.. (2012). Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction. Superlattices and Microstructures. 52(3). 438–448. 10 indexed citations
10.
Keffous, A., et al.. (2012). Investigation of nc-PbS/a-Si1−xCx:H/pSi(100) heterostructures for LED applications. Optical Materials. 35(1). 1–4. 13 indexed citations
11.
Keffous, A., et al.. (2010). Influence of polyethylene glycol-300 addition on nanostructured lead sulfide thin films properties. Optics Communications. 283(17). 3355–3360. 7 indexed citations
12.
Keffous, A., et al.. (2008). Morphological and photoluminescence study of porous thin SiC layer grown onto silicon. Surface and Interface Analysis. 40(3-4). 763–768. 9 indexed citations
13.
Nezzal, G., et al.. (2008). Effect of thickness and porous structure of SiC layers on the spectral response of the Pd/SiC–pSi Schottky photodiodes. Optics Communications. 281(8). 2126–2131. 7 indexed citations
14.
Keffous, A., et al.. (2008). A STUDY ON THE PHOTOLUMINESCENCE PROPERTIES OF POROUS 6H-SiC(p) AND SiC FILM ON p-Si SUBSTRATE. Modern Physics Letters B. 22(6). 415–424. 3 indexed citations
15.
Keffous, A., et al.. (2007). Chemical etching of hot‐pressed p‐type polycrystalline SiC surfaces by HF/K 2 S 2 O 8 solutions. Surface and Interface Analysis. 39(5). 392–396. 8 indexed citations
16.
Keffous, A., N. Gabouze, M. Kechouane, et al.. (2007). Morphology and photoluminescence of anodized aluminium‐coated 6H‐SiC samples. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(6). 1913–1917. 4 indexed citations
17.
Keffous, A., et al.. (2006). Electrical properties of Schottky diode Pt/SiC and Pt/porous SiC performed on highly resistif p-type 6H-SiC. Vacuum. 81(5). 663–668. 16 indexed citations
18.
Keffous, A., et al.. (2006). Lithium diffusion profile onto highly resistive p-type silicon. Vacuum. 81(4). 417–421. 4 indexed citations
19.
Keffous, A., M. Kechouane, N. Gabouze, et al.. (2006). Effect of anodization time on photoluminescence of porous thin SiC layer grown onto silicon. Journal of Luminescence. 126(2). 561–565. 12 indexed citations
20.
Siad, M., et al.. (2004). Correlation between series resistance and parameters of Al/n-Si and Al/p-Si Schottky barrier diodes. Applied Surface Science. 236(1-4). 366–376. 80 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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