M. E. Twigg

1.3k total citations
31 papers, 1.0k citations indexed

About

M. E. Twigg is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, M. E. Twigg has authored 31 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 15 papers in Materials Chemistry and 11 papers in Electrical and Electronic Engineering. Recurrent topics in M. E. Twigg's work include GaN-based semiconductor devices and materials (15 papers), ZnO doping and properties (11 papers) and Ga2O3 and related materials (11 papers). M. E. Twigg is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), ZnO doping and properties (11 papers) and Ga2O3 and related materials (11 papers). M. E. Twigg collaborates with scholars based in United States, Poland and South Korea. M. E. Twigg's co-authors include A. E. Wickenden, R.L. Henry, D. D. Koleske, James C. Culbertson, Jeffrey R. Deschamps, J. H. Konnert, Aaron R. Clapp, Ivan Stanish, J. Matthew Mauro and Igor L. Medintz and has published in prestigious journals such as Proceedings of the National Academy of Sciences, Applied Physics Letters and Journal of The Electrochemical Society.

In The Last Decade

M. E. Twigg

31 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. E. Twigg United States 13 622 520 433 376 182 31 1.0k
Chih‐Wei Hsu Taiwan 24 889 1.4× 863 1.7× 615 1.4× 544 1.4× 384 2.1× 73 1.7k
Michael Gerhold United States 21 422 0.7× 447 0.9× 557 1.3× 512 1.4× 252 1.4× 41 1.2k
Guido Mula Italy 20 673 1.1× 648 1.2× 662 1.5× 322 0.9× 558 3.1× 69 1.4k
Thibaut Devillers France 18 289 0.5× 715 1.4× 288 0.7× 424 1.1× 440 2.4× 53 1.1k
P. Rajagopal United States 23 999 1.6× 352 0.7× 1.1k 2.5× 259 0.7× 160 0.9× 59 1.5k
Jun Hyuk Park South Korea 15 572 0.9× 762 1.5× 597 1.4× 356 0.9× 168 0.9× 36 1.3k
P. A. Stampe United States 21 309 0.5× 898 1.7× 387 0.9× 509 1.4× 178 1.0× 45 1.2k
Fabrice Donatini France 21 348 0.6× 1.0k 1.9× 868 2.0× 334 0.9× 243 1.3× 77 1.5k
Jung‐Hoon Song South Korea 20 300 0.5× 861 1.7× 502 1.2× 940 2.5× 374 2.1× 71 1.7k
Cheyenne Lynsky United States 16 577 0.9× 307 0.6× 281 0.6× 177 0.5× 220 1.2× 28 920

Countries citing papers authored by M. E. Twigg

Since Specialization
Citations

This map shows the geographic impact of M. E. Twigg's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. E. Twigg with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. E. Twigg more than expected).

Fields of papers citing papers by M. E. Twigg

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. E. Twigg. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. E. Twigg. The network helps show where M. E. Twigg may publish in the future.

Co-authorship network of co-authors of M. E. Twigg

This figure shows the co-authorship network connecting the top 25 collaborators of M. E. Twigg. A scholar is included among the top collaborators of M. E. Twigg based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. E. Twigg. M. E. Twigg is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Picard, Yoosuf N., Lena Mazeina, Sergey I. Maximenko, et al.. (2009). Structure and Orientation Determination of Metal-Oxide Nanostructures by Electron Backscatter Diffraction. Microscopy and Microanalysis. 15(S2). 402–403. 4 indexed citations
2.
Picard, Yoosuf N., M. E. Twigg, Joshua D. Caldwell, et al.. (2009). Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging. Scripta Materialia. 61(8). 773–776. 37 indexed citations
3.
Mastro, M. A., R. T. Holm, Nabil Bassim, et al.. (2005). High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates. Applied Physics Letters. 87(24). 23 indexed citations
4.
Mastro, M. A., Charles R. Eddy, D. Kurt Gaskill, et al.. (2005). MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates. Journal of Crystal Growth. 287(2). 610–614. 35 indexed citations
5.
Eddy, Charles R., R. T. Holm, R.L. Henry, James C. Culbertson, & M. E. Twigg. (2005). Investigation of three-step epilayer growth approach of GaN films to minimize compensation. Journal of Electronic Materials. 34(9). 1187–1192. 12 indexed citations
6.
Medintz, Igor L., J. H. Konnert, Aaron R. Clapp, et al.. (2004). A fluorescence resonance energy transfer-derived structure of a quantum dot-protein bioconjugate nanoassembly. Proceedings of the National Academy of Sciences. 101(26). 9612–9617. 226 indexed citations
7.
Godbey, D. J., et al.. (2003). A Si/sub 0.7/Ge/sub 0.3/ strained layer etch stop for the generation of bond and etch back SOI. 143–144. 1 indexed citations
8.
Benyoucef, Mohamed, M. Kuball, D. D. Koleske, et al.. (2002). Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates. Materials Science and Engineering B. 93(1-3). 15–18. 3 indexed citations
9.
Hobart, Karl D., Fritz J. Kub, M. E. Twigg, Glenn G. Jernigan, & Philip E. Thompson. (2002). Ultra-cut: a simple technique for the fabrication of SOI substrates with ultra-thin (>5 nm) silicon films. 220. 145–146. 1 indexed citations
10.
Snow, E. S., P. M. Campbell, M. E. Twigg, & F. Keith Perkins. (2001). Ultrathin PtSi layers patterned by scanned probe lithography. Applied Physics Letters. 79(8). 1109–1111. 9 indexed citations
11.
Glaser, E. R., J. A. Freitas, G. C. B. Braga, et al.. (2001). Magnetic resonance studies of defects in GaN with reduced dislocation densities. Physica B Condensed Matter. 308-310. 51–57. 7 indexed citations
12.
Boos, J.B., B. R. Bennett, W. Kruppa, et al.. (1999). Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(3). 1022–1027. 34 indexed citations
13.
Koleske, Daniel, M. E. Twigg, A. E. Wickenden, et al.. (1999). Properties of Si-doped GaN films grown using multiple AlN interlayers. Applied Physics Letters. 75(20). 3141–3143. 20 indexed citations
14.
Koleske, D. D., A. E. Wickenden, R. L. Henry, et al.. (1998). Enhanced GaN Decomposition at Movpe Pressures. MRS Proceedings. 537. 3 indexed citations
15.
Hobart, Karl D., et al.. (1998). Characterization of Si pn junctions fabricated by direct wafer bonding in ultra-high vacuum. Applied Physics Letters. 72(9). 1095–1097. 26 indexed citations
16.
Liu, S.T., et al.. (1997). Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX/sup TM/ substrates. IEEE Transactions on Nuclear Science. 44(6). 2101–2105. 17 indexed citations
17.
Twigg, M. E.. (1995). Structure of stacking fault pyramids in silicon-on-insulator material. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 13(5). 2341–2347. 1 indexed citations
18.
Chow, Gan Moog, T. Ambrose, John Q. Xiao, et al.. (1992). Chemical precipitation and properties of nanocrystalline FeCu alloy and composite powders. Nanostructured Materials. 1(5). 361–368. 18 indexed citations
19.
Yang, M. J., R. J. Wagner, B. V. Shanabrook, et al.. (1992). Accurate determination of effective quantum well thickness: Infrared absorption by transverse-optical phonons. Applied Physics Letters. 61(5). 583–585. 10 indexed citations
20.
Glosser, R., et al.. (1990). Photoreflectance Characterization of Silicon Films on Insulator. MRS Proceedings. 188. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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