L.‐W. Yin

1.1k total citations
15 papers, 877 citations indexed

About

L.‐W. Yin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, L.‐W. Yin has authored 15 papers receiving a total of 877 indexed citations (citations by other indexed papers that have themselves been cited), including 7 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 5 papers in Condensed Matter Physics. Recurrent topics in L.‐W. Yin's work include Boron and Carbon Nanomaterials Research (5 papers), GaN-based semiconductor devices and materials (5 papers) and Semiconductor Quantum Structures and Devices (4 papers). L.‐W. Yin is often cited by papers focused on Boron and Carbon Nanomaterials Research (5 papers), GaN-based semiconductor devices and materials (5 papers) and Semiconductor Quantum Structures and Devices (4 papers). L.‐W. Yin collaborates with scholars based in China, Japan and United States. L.‐W. Yin's co-authors include Yoshio Bando, M.‐S. Li, Dmitri Golberg, Yanli Zhu, Yang Liu, Yi‐xiang Qi, Umesh K. Mishra, R. M. Kolbas, You Mi Hwang and Yubao Li and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Advanced Functional Materials.

In The Last Decade

L.‐W. Yin

14 papers receiving 855 citations

Peers

L.‐W. Yin
E.‐K. Suh South Korea
R. Bożek Poland
Yongdan Hu United States
Z. H. Lan Taiwan
L.‐W. Yin
Citations per year, relative to L.‐W. Yin L.‐W. Yin (= 1×) peers M.‐S. Li

Countries citing papers authored by L.‐W. Yin

Since Specialization
Citations

This map shows the geographic impact of L.‐W. Yin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.‐W. Yin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.‐W. Yin more than expected).

Fields of papers citing papers by L.‐W. Yin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L.‐W. Yin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.‐W. Yin. The network helps show where L.‐W. Yin may publish in the future.

Co-authorship network of co-authors of L.‐W. Yin

This figure shows the co-authorship network connecting the top 25 collaborators of L.‐W. Yin. A scholar is included among the top collaborators of L.‐W. Yin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L.‐W. Yin. L.‐W. Yin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Yin, L.‐W., M.‐S. Li, Yoshio Bando, et al.. (2007). Tailoring the Optical Properties of Epitaxially Grown Biaxial ZnO/Ge, and Coaxial ZnO/Ge/ZnO and Ge/ZnO/Ge Heterostructures. Advanced Functional Materials. 17(2). 270–276. 50 indexed citations
2.
Yin, L.‐W., et al.. (2005). Self‐Assembled Highly Faceted Wurtzite‐Type ZnS Single‐Crystalline Nanotubes with Hexagonal Cross‐Sections. Advanced Materials. 17(16). 1972–1977. 162 indexed citations
3.
Yin, L.‐W., Yoshio Bando, Yanli Zhu, et al.. (2005). Growth and Field Emission of Hierarchical Single‐Crystalline Wurtzite AlN Nanoarchitectures. Advanced Materials. 17(1). 110–114. 120 indexed citations
4.
Yin, L.‐W., Yoshio Bando, Yanli Zhu, et al.. (2005). Single‐Crystalline AlN Nanotubes with Carbon‐Layer Coatings on the Outer and Inner Surfaces via a Multiwalled‐Carbon‐Nanotube‐Template‐Induced Route. Advanced Materials. 17(2). 213–217. 112 indexed citations
5.
Zhu, Yanli, Yoshio Bando, & L.‐W. Yin. (2004). Design and Fabrication of BN‐Sheathed ZnS Nanoarchitectures. Advanced Materials. 16(4). 331–334. 48 indexed citations
6.
Yin, L.‐W., Yoshio Bando, Dmitri Golberg, & M.‐S. Li. (2004). Growth of Single‐Crystal Indium Nitride Nanotubes and Nanowires by a Controlled‐Carbonitridation Reaction Route. Advanced Materials. 16(20). 1833–1838. 95 indexed citations
7.
Yin, L.‐W., Yoshio Bando, Yanli Zhu, Dmitri Golberg, & M.‐S. Li. (2004). A Two‐Stage Route to Coaxial Cubic‐Aluminum‐Nitride–Boron‐ Nitride Composite Nanotubes. Advanced Materials. 16(11). 929–933. 51 indexed citations
8.
Yin, L.‐W., Yoshio Bando, M.‐S. Li, Yang Liu, & Yi‐xiang Qi. (2003). Unique Single‐Crystalline Beta Carbon Nitride Nanorods. Advanced Materials. 15(21). 1840–1844. 91 indexed citations
9.
Yin, L.‐W., et al.. (2003). Novel Route to Cubic Boron Nitride Dendritic Nanostructures under Electron Beam Irradiation. Advanced Materials. 15(9). 720–723. 16 indexed citations
10.
Yin, L.‐W., et al.. (1993). Device performance of submicrometre MESFETs with LTG passivation. Electronics Letters. 29(17). 1550–1551. 7 indexed citations
11.
Yin, L.‐W., Nam Nguyen, You Mi Hwang, et al.. (1993). Temperature investigation of the gate-drain diode of power GaAs MESFET with low-temperature-grown (Al)GaAs passivation. Journal of Electronic Materials. 22(12). 1503–1505. 6 indexed citations
12.
Yin, L.‐W., J. P. Ibbetson, M. Hashemi, et al.. (1992). Investigation of the electronic properties of insitu annealed low-temperature gallium arsenide grown by molecular beam epitaxy. Applied Physics Letters. 60(16). 2005–2007. 5 indexed citations
13.
Ibbetson, J. P., L.‐W. Yin, M. Hashemi, A. C. Gossard, & Umesh K. Mishra. (1991). Study of Transport Through Low-Temperature GaAs Surface Insulator Layers. MRS Proceedings. 241. 1 indexed citations
14.
Yin, L.‐W., J. P. Ibbetson, M. Hashemi, et al.. (1991). Study of Modulation in GaAs Misfets with LT-GaAs as a Gate Insulator. MRS Proceedings. 241. 3 indexed citations
15.
Yin, L.‐W., et al.. (1990). Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE. IEEE Electron Device Letters. 11(12). 561–563. 110 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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