L.L. Bouilov

1.6k total citations · 1 hit paper
16 papers, 1.3k citations indexed

About

L.L. Bouilov is a scholar working on Materials Chemistry, Mechanics of Materials and Electrical and Electronic Engineering. According to data from OpenAlex, L.L. Bouilov has authored 16 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Materials Chemistry, 10 papers in Mechanics of Materials and 5 papers in Electrical and Electronic Engineering. Recurrent topics in L.L. Bouilov's work include Diamond and Carbon-based Materials Research (11 papers), Metal and Thin Film Mechanics (9 papers) and GaN-based semiconductor devices and materials (4 papers). L.L. Bouilov is often cited by papers focused on Diamond and Carbon-based Materials Research (11 papers), Metal and Thin Film Mechanics (9 papers) and GaN-based semiconductor devices and materials (4 papers). L.L. Bouilov collaborates with scholars based in Russia, Bulgaria and United States. L.L. Bouilov's co-authors include Б. В. Спицын, B.V. Derjaguin, M. D. Кrotova, A.Ya. Sakharova, А.Е. Gorodetsky, А.П. Захаров, V.V. Zhirnov, Р. Х. Залавутдинов, E. I. Givargizov and I. G. Teremetskaya and has published in prestigious journals such as Surface and Coatings Technology, Journal of Crystal Growth and Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment.

In The Last Decade

L.L. Bouilov

16 papers receiving 1.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Vapor growth of diamond on diamond and other surfaces

1981 847 citations Б. В. Спицын, L.L. Bouilov et al. Journal of Crystal Growth profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L.L. Bouilov Russia	8	1.1k	612	371	235	234	16	1.3k
Б. В. Спицын Russia	16	1.5k 1.4×	746 1.2×	470 1.3×	305 1.3×	333 1.4×	60	1.8k
W. Müller-Sebert Germany	19	1.4k 1.2×	793 1.3×	566 1.5×	266 1.1×	349 1.5×	32	1.7k
M. I. Landstrass United States	16	1.3k 1.2×	395 0.6×	609 1.6×	308 1.3×	287 1.2×	19	1.4k
F. Jomard France	18	800 0.7×	329 0.5×	397 1.1×	120 0.5×	174 0.7×	47	966
S. F. Yoon Singapore	23	1.3k 1.2×	553 0.9×	994 2.7×	591 2.5×	72 0.3×	156	2.0k
Soumen Mandal United Kingdom	23	1.1k 1.0×	338 0.6×	444 1.2×	302 1.3×	124 0.5×	81	1.6k
Yoichi Hirose Japan	15	991 0.9×	536 0.9×	312 0.8×	179 0.8×	237 1.0×	39	1.2k
David N. Belton United States	28	1.9k 1.7×	377 0.6×	459 1.2×	508 2.2×	138 0.6×	53	2.1k
Lanhua Wei United States	18	956 0.9×	446 0.7×	174 0.5×	123 0.5×	201 0.9×	36	1.5k
R. O. Dillon United States	14	1.2k 1.1×	607 1.0×	402 1.1×	124 0.5×	130 0.6×	31	1.5k

Countries citing papers authored by L.L. Bouilov

Since Specialization

Citations

This map shows the geographic impact of L.L. Bouilov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.L. Bouilov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.L. Bouilov more than expected).

Fields of papers citing papers by L.L. Bouilov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L.L. Bouilov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.L. Bouilov. The network helps show where L.L. Bouilov may publish in the future.

Co-authorship network of co-authors of L.L. Bouilov

This figure shows the co-authorship network connecting the top 25 collaborators of L.L. Bouilov. A scholar is included among the top collaborators of L.L. Bouilov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L.L. Bouilov. L.L. Bouilov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Спицын, Б. В., et al.. (2000). Origin, state of the art and some prospects of the diamond CVD. Brazilian Journal of Physics. 30(3). 471–481. 17 indexed citations

Gorodetsky, А.Е., et al.. (1999). AlN films grown on diamond and silicon carbide. Diamond and Related Materials. 8(7). 1267–1271. 7 indexed citations

Спицын, Б. В., et al.. (1999). Prospects of novel hybrid methods for the activated chemical vapor deposition of diamond. Diamond and Related Materials. 8(8-9). 1371–1376. 4 indexed citations

Bouilov, L.L., et al.. (1999). Application of aluminum nitride films for electronic devices. Diamond and Related Materials. 8(2-5). 369–372. 60 indexed citations

Buzulutskov, A., A. Bondar, V. Nagaslaev, et al.. (1998). Study of AlN coatings for microstrip gas chambers. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 409(1-3). 33–36. 3 indexed citations

Спицын, Б. В., et al.. (1998). Field emitters based on Si tips with AlN coating. Diamond and Related Materials. 7(2-5). 692–694. 11 indexed citations

Спицын, Б. В., et al.. (1998). AIN heteroepitaxial and oriented films grown on (111), (110) and (100) natural diamond faces. Diamond and Related Materials. 7(2-5). 356–359. 15 indexed citations

Bondar, A., A. Buzulutskov, V. Nagaslaev, et al.. (1997). A semiconducting AlN coating for microstrip gas chambers. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 394(1-2). 265–267. 1 indexed citations

Азарко, И. И., A. Denisenko, V.S. Varichenko, et al.. (1993). Electron paramagnetic resonance of boron-implanted natural diamonds and epitaxial diamond films. Diamond and Related Materials. 2(8). 1164–1167. 3 indexed citations

10.

Bouilov, L.L., et al.. (1991). Electron spin resonance study of the defects in polycrystalline diamond films. Surface and Coatings Technology. 47(1-3). 538–544. 4 indexed citations

11.

Bouilov, L.L., et al.. (1991). Photoelectron emission from diamond films. Surface and Coatings Technology. 47(1-3). 481–486. 1 indexed citations

12.

Спицын, Б. В., L.L. Bouilov, & B.V. Derjaguin. (1988). Diamond and diamond-like films: Deposition from the vapour phase, structure and properties. Progress in Crystal Growth and Characterization. 17(2). 79–170. 61 indexed citations

13.

Pleskov, Yu. V., A.Ya. Sakharova, M. D. Кrotova, L.L. Bouilov, & Б. В. Спицын. (1987). ChemInform Abstract: Photoelectrochemical Properties of Semiconductor Diamond.. ChemInform. 18(44). 1 indexed citations

14.

Sakharova, A.Ya., et al.. (1987). Photoelectrochemical properties of semiconductor diamond. Journal of Electroanalytical Chemistry. 228(1-2). 19–27. 226 indexed citations

15.

Спицын, Б. В., L.L. Bouilov, & B.V. Derjaguin. (1981). Vapor growth of diamond on diamond and other surfaces. Journal of Crystal Growth. 52. 219–226. 847 indexed citations breakdown →

16.

Derjaguin, B.V., et al.. (1975). Structure of autoepitaxial diamond films. Journal of Crystal Growth. 31. 44–48. 53 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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