Lingli Jiang

430 total citations
33 papers, 350 citations indexed

About

Lingli Jiang is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Lingli Jiang has authored 33 papers receiving a total of 350 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 11 papers in Condensed Matter Physics and 7 papers in Materials Chemistry. Recurrent topics in Lingli Jiang's work include Semiconductor materials and devices (21 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Electrostatic Discharge in Electronics (11 papers). Lingli Jiang is often cited by papers focused on Semiconductor materials and devices (21 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Electrostatic Discharge in Electronics (11 papers). Lingli Jiang collaborates with scholars based in China, Hong Kong and Netherlands. Lingli Jiang's co-authors include Hongyu Yu, Tianli Duan, Bo Zhang, Hui Wang, Fanming Zeng, Guangnan Zhou, Ming Qiao, Xinpeng Lin, Zhaoji Li and Kai Cheng and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

Lingli Jiang

28 papers receiving 326 citations

Peers

Lingli Jiang

EEE

CMP

EOMM

AMPO

Yanxu Zhu China

Ryan Davies United States

Kawin Surakitbovorn United States

Igor Baraia-Etxaburu Spain

Xiangyu Yang United States

Jiafei Yao China

Frédéric Morancho France

Jan Böcker Germany

Radoslava Mitova France

Yanxu Zhu China

Lingli Jiang

152 ×0.6

EEE

137 ×0.8

CMP

66 ×0.8

EOMM

141 ×1.9

48 ×1.3

AMPO

Citations per year, relative to Lingli Jiang Lingli Jiang (= 1×) peers Yanxu Zhu

Countries citing papers authored by Lingli Jiang

Since Specialization

Citations

This map shows the geographic impact of Lingli Jiang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lingli Jiang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lingli Jiang more than expected).

Fields of papers citing papers by Lingli Jiang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lingli Jiang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lingli Jiang. The network helps show where Lingli Jiang may publish in the future.

Co-authorship network of co-authors of Lingli Jiang

This figure shows the co-authorship network connecting the top 25 collaborators of Lingli Jiang. A scholar is included among the top collaborators of Lingli Jiang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lingli Jiang. Lingli Jiang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

He, Jiaqi, Wei‐Chih Cheng, Yang Jiang, et al.. (2021). Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps. Materials Science in Semiconductor Processing. 132. 105907–105907. 6 indexed citations

Cheng, Wei‐Chih, Fanming Zeng, Yu‐Chieh Chien, et al.. (2021). Improvement of β-Ga₂O₃ MIS-SBD Interface Using Al-Reacted Interfacial Layer. IEEE Transactions on Electron Devices. 68(7). 3314–3319. 5 indexed citations

Lin, Xinpeng, et al.. (2018). Evaluation of LPCVD SiN_{<italic>x</italic>} Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT. IEEE Transactions on Electron Devices. 65(5). 1759–1764. 28 indexed citations

Wang, Hui, et al.. (2018). A simulation study of field plate termination in Ga ₂ O ₃ Schottky barrier diodes. Chinese Physics B. 27(12). 127302–127302. 11 indexed citations

Wang, Hui, et al.. (2017). A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates. Chinese Physics B. 26(4). 47305–47305. 2 indexed citations

Wang, Ning, Hui Wang, Xinpeng Lin, et al.. (2017). Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature. AIP Advances. 7(9). 13 indexed citations

Wang, Hui, et al.. (2017). Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates. Solid-State Electronics. 137. 52–57. 2 indexed citations

Dong, Bin, et al.. (2016). Characterization of trap behaviors in AlGaN/GaN MIS-HEMT via transient capacitance measurement. 12. 1053–1055. 2 indexed citations

Yu, Hongyu, et al.. (2016). Development of three-dimensional memory (3D-M). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9818. 981805–981805. 1 indexed citations

10.

Dong, Bin, Ning Wang, Lingli Jiang, et al.. (2016). Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement. AIP Advances. 6(9). 13 indexed citations

11.

Duan, Tianli, Shuxiang Zhang, Lingli Jiang, et al.. (2015). Overshoot Stress on Ultra-Thin HfO<sub>2</sub> High-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> Layer and Its Impact on Lifetime Extraction. IEEE Electron Device Letters. 36(12). 1267–1270. 4 indexed citations

12.

Wu, Dongliang, et al.. (2013). Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS. Journal of Semiconductors. 34(2). 24004–24004. 4 indexed citations

13.

Qiao, Ming, Lingli Jiang, Bo Zhang, & Zhaoji Li. (2012). A 700 V BCD technology platform for high voltage applications. Journal of Semiconductors. 33(4). 44004–44004. 10 indexed citations

14.

Jiang, Lingli, et al.. (2012). A Method to Prevent Strong Snapback in LDNMOS for ESD Protection. IEEE Transactions on Device and Materials Reliability. 13(1). 50–53. 11 indexed citations

15.

Jiang, Lingli, et al.. (2012). Impact of parasitic resistance on the ESD robustness of high-voltage devices. Journal of Semiconductors. 33(1). 14005–14005. 2 indexed citations

16.

Qiao, Ming, Lingli Jiang, Meng Wang, et al.. (2011). High-voltage thick layer SOI technology for PDP scan driver IC. 180–183. 24 indexed citations

17.

Jiang, Lingli, et al.. (2010). A simple and effective ESD protection structure for high-voltage-tolerant I/O pad. 2. 605–608.

18.

Qiao, Ming, et al.. (2010). 700 V segmented anode LIGBT with low on-resistance and onset Voltage. 40. 897–899. 7 indexed citations

19.

Jiang, Lingli, Ming Qiao, Zhaoji Li, & Bo Zhang. (2009). A novel double RESURF LDMOS with optimized ESD robustness. 638–640. 6 indexed citations

20.

Liu, Juan, et al.. (2009). The gate-bias influence for ESD characteristic of NMOS. 1. 1047–1050. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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