Lingli Jiang

430 citations

33 papers · 350 indexed · h-index 10

Co-authors: Hongyu Yu Tianli Duan Bo ZhangHui WangFanming Zeng Guangnan Zhou Ming Qiao Xinpeng Lin
Topics: Semiconductor materials and devices (21 papers)Silicon Carbide Semiconductor Technologies (13 papers)Electrostatic Discharge in Electronics (11 papers)
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: IEEE Transactions on Electron Devices IEEE Electron Device Letters Solid-State Electronics
Partner nations: China Hong Kong Netherlands

In The Last Decade

Lingli Jiang

28 papers receiving 326 citations

Peers

Countries citing papers authored by Lingli Jiang

Since Specialization

Citations

This map shows the geographic impact of Lingli Jiang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lingli Jiang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lingli Jiang more than expected).

Fields of papers citing papers by Lingli Jiang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lingli Jiang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lingli Jiang. The network helps show where Lingli Jiang may publish in the future.

Co-authorship network of co-authors of Lingli Jiang

This figure shows the co-authorship network connecting the top 25 collaborators of Lingli Jiang. A scholar is included among the top collaborators of Lingli Jiang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lingli Jiang. Lingli Jiang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps 2021 ·Materials Science in Semiconductor Processing ·Jiaqi He,Wei‐Chih Cheng,Yang Jiang,(unknown),Guangnan Zhou,(unknown),Lingli Jiang,Xiang Wang,(unknown),Qing Wang,Hongyu Yu	6
2	Improvement of β-Ga₂O₃ MIS-SBD Interface Using Al-Reacted Interfacial Layer 2021 ·IEEE Transactions on Electron Devices ·(unknown),Wei‐Chih Cheng,Fanming Zeng,(unknown),Yu‐Chieh Chien,Yang Jiang,(unknown),Lingli Jiang,Qing Wang,Kah‐Wee Ang,Hongyu Yu	5
3	Evaluation of LPCVD SiN_{<italic>x</italic>} Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT 2018 ·IEEE Transactions on Electron Devices ·(unknown),(unknown),(unknown),Xinpeng Lin,Kai Cheng,Lingli Jiang,Hongyu Yu	28
4	A simulation study of field plate termination in Ga ₂ O ₃ Schottky barrier diodes 2018 ·Chinese Physics B ·Hui Wang,Lingli Jiang,Xinpeng Lin,(unknown),Hongyu Yu	11
5	A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates 2017 ·Chinese Physics B ·Hui Wang,Ning Wang,Lingli Jiang,Xinpeng Lin,(unknown),Hongyu Yu	2
6	Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature 2017 ·AIP Advances ·Ning Wang,Hui Wang,Xinpeng Lin,(unknown),Tianli Duan,Lingli Jiang,(unknown),Kai Cheng,H.Y. Yu	13
7	Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates 2017 ·Solid-State Electronics ·Hui Wang,Ning Wang,Lingli Jiang,(unknown),Xinpeng Lin,Hongyu Yu	2
8	Characterization of trap behaviors in AlGaN/GaN MIS-HEMT via transient capacitance measurement 2016 ·Bin Dong,(unknown),Ning Wang,Lingli Jiang,(unknown),Kai Cheng,Hongyu Yu	2
9	Development of three-dimensional memory (3D-M) 2016 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Hongyu Yu,Chen Shen,Lingli Jiang,(unknown),Guobiao Zhang	1
10	Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement 2016 ·AIP Advances ·Bin Dong,(unknown),Ning Wang,Lingli Jiang,(unknown),Xiaoyan Hu,Kai Cheng,Hongyu Yu	13
11	Overshoot Stress on Ultra-Thin HfO<sub>2</sub> High-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> Layer and Its Impact on Lifetime Extraction 2015 ·IEEE Electron Device Letters ·(unknown),Tianli Duan,Shuxiang Zhang,Lingli Jiang,(unknown),Jing Yan,Chao Zhao,Huilong Zhu,Hongyu Yu	4
12	Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS 2013 ·Journal of Semiconductors ·Dongliang Wu,Lingli Jiang,(unknown),Jian Fang,Bo Zhang	4
13	A 700 V BCD technology platform for high voltage applications 2012 ·Journal of Semiconductors ·Ming Qiao,Lingli Jiang,Bo Zhang,Zhaoji Li	10
14	A Method to Prevent Strong Snapback in LDNMOS for ESD Protection 2012 ·IEEE Transactions on Device and Materials Reliability ·(unknown),Lingli Jiang,Bo Zhang	11
15	Impact of parasitic resistance on the ESD robustness of high-voltage devices 2012 ·Journal of Semiconductors ·(unknown),Lingli Jiang,(unknown),Bo Zhang	2
16	High-voltage thick layer SOI technology for PDP scan driver IC 2011 ·Ming Qiao,Lingli Jiang,Meng Wang,(unknown),Hong Liao,Tao Liang,(unknown),Bo Zhang,Zhaoji Li,(unknown),Yuanyuan Zhao,Li Lai,(unknown),(unknown),Xiaorong Luo,Zhuo Wang	24
17	A simple and effective ESD protection structure for high-voltage-tolerant I/O pad 2010 ·(unknown),Lingli Jiang,Bo Zhang	0
18	700 V segmented anode LIGBT with low on-resistance and onset Voltage 2010 ·(unknown),Ming Qiao,(unknown),Bo Zhong,Lingli Jiang,Bo Zhang	7
19	A novel double RESURF LDMOS with optimized ESD robustness 2009 ·Lingli Jiang,Ming Qiao,Zhaoji Li,Bo Zhang	6
20	The gate-bias influence for ESD characteristic of NMOS 2009 ·Juan Liu,(unknown),Jianguo Li,Lingli Jiang,Bo Zhang	3

About Lingli Jiang

Lingli Jiang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 33 papers that have together received 350 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Electrostatic Discharge in Electronics (11 papers). The work is most often cited by research in Condensed Matter Physics (171 citations), Electrical and Electronic Engineering (260 citations) and Electronic, Optical and Magnetic Materials (80 citations). Lingli Jiang has collaborated with scholars based in China, Hong Kong and Netherlands. Frequent co-authors include Hongyu Yu, Tianli Duan, Bo Zhang, Hui Wang, Fanming Zeng, Guangnan Zhou, Ming Qiao, Xinpeng Lin, Zhaoji Li and Kai Cheng. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact