Lin Shang

400 total citations
33 papers, 345 citations indexed

About

Lin Shang is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Lin Shang has authored 33 papers receiving a total of 345 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Materials Chemistry, 16 papers in Electrical and Electronic Engineering and 15 papers in Condensed Matter Physics. Recurrent topics in Lin Shang's work include GaN-based semiconductor devices and materials (14 papers), ZnO doping and properties (10 papers) and Semiconductor Quantum Structures and Devices (9 papers). Lin Shang is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), ZnO doping and properties (10 papers) and Semiconductor Quantum Structures and Devices (9 papers). Lin Shang collaborates with scholars based in China, Germany and Sweden. Lin Shang's co-authors include Jochen M. Schneider, Moritz to Baben, Bingshe Xu, Jens Emmerlich, Shufang Ma, Christoph Leyens, Guangmei Zhai, Zhigang Jia, Denis Mušić and Xuguang Liu and has published in prestigious journals such as Applied Physics Letters, Acta Materialia and Scientific Reports.

In The Last Decade

Lin Shang

31 papers receiving 337 citations

Peers

Lin Shang

EEE

CMP

Sanjay Panwar India

Eric R. Hoglund United States

X.G. Capdevila Spain

Xiangang Xu China

Elizabeth A. Paisley United States

Gyeungho Kim South Korea

Shusaku Akiba Japan

Xueli Du China

A. Kellou Algeria

Silvia Maria Deambrosis Italy

Sanjay Panwar India

Lin Shang

297 ×1.3

99 ×0.9

94 ×0.9

EEE

52 ×0.6

CMP

50 ×0.7

Citations per year, relative to Lin Shang Lin Shang (= 1×) peers Sanjay Panwar

Countries citing papers authored by Lin Shang

Since Specialization

Citations

This map shows the geographic impact of Lin Shang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lin Shang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lin Shang more than expected).

Fields of papers citing papers by Lin Shang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lin Shang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lin Shang. The network helps show where Lin Shang may publish in the future.

Co-authorship network of co-authors of Lin Shang

This figure shows the co-authorship network connecting the top 25 collaborators of Lin Shang. A scholar is included among the top collaborators of Lin Shang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lin Shang. Lin Shang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Li, Te, Shufang Ma, Z. Gary Yang, et al.. (2025). Temperature dependence of optical property and crystal quality in InGaAs/AlGaAs MQWs grown by MBE. Optical Materials. 162. 116855–116855. 1 indexed citations

Zheng, Hua, Hailiang Dong, Zhigang Jia, et al.. (2025). Quantum-Well-Embedded InGaN Quantum Dot Vertical-Cavity Surface-Emitting Laser and Its Photoelectric Performance. Photonics. 12(3). 276–276.

Shang, Lin, Shufang Ma, Z. Gary Yang, et al.. (2024). Investigation of the growth rate on optical and crystal quality of InGaAs/AlGaAs multi-quantum wells and InGaAs single layer grown by molecular beam epitaxy (MBE). Materials Science in Semiconductor Processing. 185. 108860–108860. 3 indexed citations

Shang, Lin, Shufang Ma, Z. Gary Yang, et al.. (2024). Investigation of the growth temperature of AlGaAs barrier layer on optical and crystal quality of InGaAs/AlGaAs multi-quantum wells and AlGaAs single layer grown by molecular beam epitaxy (MBE). Materials Science in Semiconductor Processing. 187. 109140–109140.

Yang, Z. Gary, Shufang Ma, Shuai Yuan, et al.. (2024). InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property. Materials Science in Semiconductor Processing. 180. 108584–108584. 3 indexed citations

Yang, Zhi, Shufang Ma, Qingming Liu, et al.. (2023). Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells. Materials. 16(17). 6068–6068. 2 indexed citations

Shang, Lin, et al.. (2021). The Surface Morphology Evolution of GaN Nucleation Layer during Annealing and Its Influence on the Crystal Quality of GaN Films. Coatings. 11(2). 188–188. 6 indexed citations

Ma, Shufang, Xiaodong Hao, Qingming Liu, et al.. (2021). Crystallization kinetics of amorphous red phosphorus to black phosphorus by chemical vapor transport. CrystEngComm. 24(3). 504–511. 5 indexed citations

Ding, Shukai, Wei Cheng, Gaohui Du, et al.. (2020). Millimeter-scale laminar graphene matrix by organic molecule confinement reaction. Carbon. 161. 277–286. 11 indexed citations

10.

Shang, Lin, et al.. (2020). Study of the Surface Morphology and Optical Characteristics in InGaN/GaN MQWs Epitaxial-Layers Following Neutron Irradiation. ECS Journal of Solid State Science and Technology. 9(3). 36001–36001. 4 indexed citations

11.

Han, Dan, Shufang Ma, Xiaodong Hao, et al.. (2020). Effect of in situ degradation on the atomic structure and optical properties of GaN-based green light-emitting diodes. Applied Physics Letters. 117(21). 6 indexed citations

12.

Liu, Qingming, Dan Han, Lin Shang, et al.. (2020). Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes. Optical Materials. 107. 110129–110129. 2 indexed citations

13.

Shang, Lin, Shufang Ma, Bin Han, et al.. (2019). Low temperature photoluminescence study of GaAs defect states*. Chinese Physics B. 29(1). 10703–10703. 11 indexed citations

14.

Han, Dan, Shufang Ma, Zhigang Jia, et al.. (2018). Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips. Applied Optics. 57(11). 2835–2835. 5 indexed citations

15.

Chen, Yen‐Ting, et al.. (2017). Nanometre-scale 3D defects in Cr2AlC thin films. Scientific Reports. 7(1). 984–984. 7 indexed citations

16.

Baben, Moritz to, Stanislav Mráz, Lin Shang, et al.. (2017). HPPMS deposition from composite targets: Effect of two orders of magnitude target power density changes on the composition of sputtered Cr-Al-C thin films. Vacuum. 145. 285–289. 24 indexed citations

17.

Han, Dan, Shufang Ma, Zhigang Jia, et al.. (2017). Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip. Optical Materials Express. 7(9). 3261–3261. 13 indexed citations

18.

Shang, Lin, Moritz to Baben, K.G. Pradeep, et al.. (2016). Phase formation of Nb2AlC investigated by combinatorial thin film synthesis and ab initio calculations. Journal of the European Ceramic Society. 37(1). 35–41. 10 indexed citations

19.

Shang, Lin, et al.. (2016). Effect of Si additions on the Al2O3 grain refinement upon oxidation of Cr2AlC MAX phase. Journal of the European Ceramic Society. 37(4). 1339–1347. 16 indexed citations

20.

Shang, Lin, Taiping Lü, Guangmei Zhai, et al.. (2015). The evolution of a GaN/sapphire interface with different nucleation layer thickness during two-step growth and its influence on the bulk GaN crystal quality. RSC Advances. 5(63). 51201–51207. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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