K. Remack

433 total citations
12 papers, 321 citations indexed

About

K. Remack is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, K. Remack has authored 12 papers receiving a total of 321 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 2 papers in Biomedical Engineering. Recurrent topics in K. Remack's work include Semiconductor materials and devices (12 papers), Ferroelectric and Negative Capacitance Devices (9 papers) and Ferroelectric and Piezoelectric Materials (7 papers). K. Remack is often cited by papers focused on Semiconductor materials and devices (12 papers), Ferroelectric and Negative Capacitance Devices (9 papers) and Ferroelectric and Piezoelectric Materials (7 papers). K. Remack collaborates with scholars based in United States. K. Remack's co-authors include T. S. Moise, Scott R. Summerfelt, J. Antonio Travieso-Rodríguez, Krishna Udayakumar, H. McAdams, S. Aggarwal, Glen R. Fox, F. G. Celii, J. W. McPherson and Lindsey Hall and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, Japanese Journal of Applied Physics and IEEE Transactions on Device and Materials Reliability.

In The Last Decade

K. Remack

12 papers receiving 308 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Remack United States 8 279 218 66 27 9 12 321
Mao‐Chou Tai Taiwan 10 323 1.2× 147 0.7× 68 1.0× 32 1.2× 5 0.6× 46 353
Goedele Potoms Belgium 7 309 1.1× 131 0.6× 23 0.3× 16 0.6× 8 0.9× 19 319
Xiaoliang Zhou China 14 530 1.9× 335 1.5× 61 0.9× 37 1.4× 6 0.7× 62 575
Hyeon-Kyun Noh South Korea 8 419 1.5× 302 1.4× 31 0.5× 40 1.5× 14 1.6× 12 453
Po‐Yung Liao Taiwan 14 468 1.7× 240 1.1× 90 1.4× 13 0.5× 7 0.8× 27 478
Abhisek Chakraborty Italy 9 226 0.8× 149 0.7× 32 0.5× 18 0.7× 16 1.8× 12 271
Toshimasa Eguchi Japan 8 405 1.5× 272 1.2× 30 0.5× 20 0.7× 9 1.0× 15 430
Haoxin Fu China 7 152 0.5× 118 0.5× 145 2.2× 23 0.9× 19 2.1× 18 233
Manodipan Sahoo India 10 283 1.0× 181 0.8× 85 1.3× 34 1.3× 21 2.3× 55 314

Countries citing papers authored by K. Remack

Since Specialization
Citations

This map shows the geographic impact of K. Remack's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Remack with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Remack more than expected).

Fields of papers citing papers by K. Remack

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Remack. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Remack. The network helps show where K. Remack may publish in the future.

Co-authorship network of co-authors of K. Remack

This figure shows the co-authorship network connecting the top 25 collaborators of K. Remack. A scholar is included among the top collaborators of K. Remack based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Remack. K. Remack is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

12 of 12 papers shown
1.
Rodriguez, J., K. Remack, Krishna Udayakumar, et al.. (2010). Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS. 750–758. 46 indexed citations
2.
Travieso-Rodríguez, J. Antonio, K. Remack, Krishna Udayakumar, et al.. (2008). Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS. 47. 1–2. 3 indexed citations
3.
Udayakumar, Krishna, et al.. (2008). Manufacturable High-Density 8 Mbit One Transistor–One Capacitor Embedded Ferroelectric Random Access Memory. Japanese Journal of Applied Physics. 47(4S). 2710–2710. 17 indexed citations
4.
Summerfelt, Scott R., T. S. Moise, Krishna Udayakumar, et al.. (2007). High-Density 8Mb 1T-1C Ferroelectric Random Access Memory Embedded Within a Low-Power 130nm Logic Process. 9–10. 17 indexed citations
5.
Udayakumar, Krishna, T. S. Moise, Scott R. Summerfelt, et al.. (2007). Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process. Japanese Journal of Applied Physics. 46(4S). 2180–2180. 11 indexed citations
6.
Travieso-Rodríguez, J. Antonio, K. Remack, Krishna Udayakumar, et al.. (2007). Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process. 64–66. 5 indexed citations
7.
Fox, Glen R., et al.. (2006). FRAM memory technology - advantages for low power, fast write, high endurance applications. 485–485. 7 indexed citations
8.
Udayakumar, Krishna, K. Remack, J. Antonio Travieso-Rodríguez, et al.. (2006). Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic. Japanese Journal of Applied Physics. 45(4S). 3202–3202. 14 indexed citations
9.
Summerfelt, Scott R., S. Aggarwal, F. G. Celii, et al.. (2005). Embedded ferroelectric memory using a 130-nm 5 metal layer Cu / FSG logic process. 153–154. 3 indexed citations
10.
McAdams, H., William F. Kraus, T. S. Moise, et al.. (2004). A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process. IEEE Journal of Solid-State Circuits. 39(4). 667–677. 94 indexed citations
11.
Travieso-Rodríguez, J. Antonio, K. Remack, Krishna Udayakumar, et al.. (2004). Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays. IEEE Transactions on Device and Materials Reliability. 4(3). 436–449. 97 indexed citations
12.
Travieso-Rodríguez, J. Antonio, K. Remack, Krishna Udayakumar, et al.. (2004). Reliability properties of low voltage PZT ferroelectric capacitors and arrays. 200–208. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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