Junxia Shi

808 total citations
44 papers, 629 citations indexed

About

Junxia Shi is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Junxia Shi has authored 44 papers receiving a total of 629 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 19 papers in Condensed Matter Physics and 17 papers in Materials Chemistry. Recurrent topics in Junxia Shi's work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (11 papers). Junxia Shi is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (12 papers) and Ga2O3 and related materials (11 papers). Junxia Shi collaborates with scholars based in United States, China and France. Junxia Shi's co-authors include L.F. Eastman, M. Pophristić, Jian‐Yong Zhang, Yizhen Yu, Xiaobin Xin, Jing-Yi Tan, Wei Deng, Cheng Zhang, Chonggang Wang and Hang Wang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Junxia Shi

43 papers receiving 614 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Junxia Shi United States 15 271 222 210 170 102 44 629
Flávio C. Vicentin Brazil 14 177 0.7× 96 0.4× 411 2.0× 161 0.9× 18 0.2× 43 712
Lucı́a González Spain 17 214 0.8× 44 0.2× 533 2.5× 124 0.7× 81 0.8× 28 834
Y Suzuki Japan 9 204 0.8× 123 0.6× 290 1.4× 216 1.3× 52 0.5× 18 914
Weidong Li China 14 88 0.3× 33 0.1× 249 1.2× 180 1.1× 22 0.2× 46 522
David Enseling Germany 18 250 0.9× 34 0.2× 792 3.8× 154 0.9× 401 3.9× 71 943
D. Skrzypek Poland 11 97 0.4× 87 0.4× 191 0.9× 181 1.1× 74 0.7× 52 379
Yutaka Ueda Japan 19 63 0.2× 756 3.4× 464 2.2× 962 5.7× 26 0.3× 74 1.3k
Sau Doan Nguyen United States 8 217 0.8× 86 0.4× 480 2.3× 561 3.3× 190 1.9× 9 805
E. Tamura Brazil 8 70 0.3× 40 0.2× 218 1.0× 73 0.4× 16 0.2× 11 386
M. Fujisawa Japan 14 280 1.0× 134 0.6× 279 1.3× 92 0.5× 18 0.2× 44 763

Countries citing papers authored by Junxia Shi

Since Specialization
Citations

This map shows the geographic impact of Junxia Shi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Junxia Shi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Junxia Shi more than expected).

Fields of papers citing papers by Junxia Shi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Junxia Shi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Junxia Shi. The network helps show where Junxia Shi may publish in the future.

Co-authorship network of co-authors of Junxia Shi

This figure shows the co-authorship network connecting the top 25 collaborators of Junxia Shi. A scholar is included among the top collaborators of Junxia Shi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Junxia Shi. Junxia Shi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pawłowski, Jarosław, et al.. (2024). Electrical manipulation of valley qubit and valley geometric phase in lateral monolayer heterostructures. Physical review. B.. 109(4). 3 indexed citations
2.
Shi, Junxia, Chen-Yu Liu, Mingyue Chen, et al.. (2020). The interference effects of bisphenol A on the synthesis of steroid hormones in human ovarian granulosa cells. Environmental Toxicology. 36(4). 665–674. 40 indexed citations
3.
Debbarma, Rousan, et al.. (2020). Direct growth of tungsten disulfide on gallium nitride and the photovoltaic characteristics of the heterojunctions. Semiconductor Science and Technology. 36(2). 25016–25016. 5 indexed citations
4.
Chen, Jing, et al.. (2019). Trends and Prevalence of Overweight and Obesity among Children Aged 2–7 Years from 2011 to 2017 in Xiamen, China. Obesity Facts. 12(4). 476–488. 3 indexed citations
5.
Shi, Junxia, et al.. (2019). A pilot study on polycystic ovarian syndrome caused by neonatal exposure to tributyltin and bisphenol A in rats. Chemosphere. 231. 151–160. 32 indexed citations
6.
Tan, Jing-Yi, Junxia Shi, Yingying Zhang, et al.. (2019). A Ni3(OH)(COO)6 −based MOF from C3 symmetric ligands: Structure and heterogeneous catalytic activities in one-pot synthesis of imine. Microporous and Mesoporous Materials. 287. 152–158. 12 indexed citations
7.
Sengupta, Parijat, Dimitris Pavlidis, & Junxia Shi. (2018). Optically adjustable valley Hall current in single-layer transition metal dichalcogenides. Journal of Applied Physics. 123(5). 2 indexed citations
8.
Sengupta, Parijat, et al.. (2018). Spin-dependent magneto-thermopower of narrow-gap lead chalcogenide quantum wells. Scientific Reports. 8(1). 5972–5972. 4 indexed citations
9.
Sengupta, Parijat, Masahiko Matsubara, E. Bellotti, & Junxia Shi. (2017). Intrinsic optical conductivity of a ${{\rm{C}}}_{2v}$ symmetric topological insulator. Semiconductor Science and Technology. 32(7). 75013–75013. 1 indexed citations
10.
Stan, Liliana, et al.. (2016). Incorporation of Al or Hf in atomic layer deposition TiO2 for ternary dielectric gate insulation of InAlN/GaN and AlGaN/GaN metal-insulator-semiconductor-heterojunction structure. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 35(1). 9 indexed citations
11.
Lan, Yi, et al.. (2014). Enhanced signal-to-noise in photodetectors due to interface phonon-assisted transitions. 80. 1–4. 1 indexed citations
12.
Shi, Junxia, et al.. (2013). Influence of acceptor-like traps in the buffer on current collapse and leakage of E-mode AlGaN/GaN MISHFETs. Semiconductor Science and Technology. 28(11). 115011–115011. 17 indexed citations
13.
Shi, Junxia & L.F. Eastman. (2011). Correlation Between AlGaN/GaN MISHFET Performance and $ \hbox{HfO}_{2}$ Insulation Layer Quality. IEEE Electron Device Letters. 32(3). 312–314. 24 indexed citations
14.
Schöche, S., Junxia Shi, Philipp Kühne, et al.. (2011). Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures. Applied Physics Letters. 98(9). 22 indexed citations
15.
Thomas, Tiju, Xiaomei Guo, Junxia Shi, et al.. (2010). Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition. Journal of Crystal Growth. 316(1). 90–96. 5 indexed citations
16.
Shi, Junxia, Sandeep Jain, Harris Ripps, et al.. (2009). Impediments to eye transplantation: ocular viability following optic-nerve transection or enucleation. British Journal of Ophthalmology. 93(9). 1134–1140. 24 indexed citations
17.
Yu, Yizhen & Junxia Shi. (2009). Relationship between Levels of Testosterone and Cortisol in Saliva and Aggressive Behaviors of Adolescents. Biomedical and Environmental Sciences. 22(1). 44–49. 43 indexed citations
18.
Thomas, Tiju, M. V. S. Chandrashekhar, Carl B. Poitras, et al.. (2008). Luminescence Enhancement in Eu-doped GaN Powder by Oxidative Passivation of the Surface. 2 indexed citations
19.
Shi, Junxia, Young Chul Choi, M. Pophristić, Michael G. Spencer, & L.F. Eastman. (2008). High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2013–2015. 6 indexed citations
20.
Choi, Young Chul, Junxia Shi, M. Pophristić, Michael G. Spencer, & L.F. Eastman. (2007). C-doped semi-insulating GaN HFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(6). 1836–1841. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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