J.F. Verwey

1.1k total citations
43 papers, 869 citations indexed

About

J.F. Verwey is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.F. Verwey has authored 43 papers receiving a total of 869 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.F. Verwey's work include Semiconductor materials and devices (24 papers), Thin-Film Transistor Technologies (16 papers) and Silicon and Solar Cell Technologies (13 papers). J.F. Verwey is often cited by papers focused on Semiconductor materials and devices (24 papers), Thin-Film Transistor Technologies (16 papers) and Silicon and Solar Cell Technologies (13 papers). J.F. Verwey collaborates with scholars based in Netherlands, Finland and United States. J.F. Verwey's co-authors include R.E.I. Schropp, J. Schoonman, J. Arends, J. Snijder, A. Amerasekera, A. Heringa, R. Cuppens, H.L. Peek, J. Th. M. De Hosson and J. Holleman and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Reports on Progress in Physics.

In The Last Decade

J.F. Verwey

43 papers receiving 788 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.F. Verwey Netherlands	18	734	389	194	55	33	43	869
L. Moro Italy	14	365 0.5×	308 0.8×	216 1.1×	60 1.1×	22 0.7×	32	653
K. H. Nicholas Finland	8	438 0.6×	260 0.7×	234 1.2×	35 0.6×	18 0.5×	20	588
D. T. Amm Canada	14	239 0.3×	289 0.7×	103 0.5×	126 2.3×	60 1.8×	32	492
G. Wagoner United States	7	219 0.3×	308 0.8×	178 0.9×	25 0.5×	31 0.9×	9	514
Yoshinori Hayafuji Japan	12	367 0.5×	255 0.7×	170 0.9×	56 1.0×	70 2.1×	31	538
Kaizo Nakamura Japan	15	281 0.4×	349 0.9×	295 1.5×	23 0.4×	37 1.1×	58	578
Jay S. Chivian United States	7	287 0.4×	324 0.8×	185 1.0×	60 1.1×	20 0.6×	13	482
F. C. Rong United States	16	556 0.8×	443 1.1×	243 1.3×	64 1.2×	45 1.4×	29	724
M. Zachau United States	14	437 0.6×	230 0.6×	478 2.5×	44 0.8×	16 0.5×	31	750
J. Magariño France	13	261 0.4×	223 0.6×	111 0.6×	33 0.6×	106 3.2×	29	483

Countries citing papers authored by J.F. Verwey

Since Specialization

Citations

This map shows the geographic impact of J.F. Verwey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.F. Verwey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.F. Verwey more than expected).

Fields of papers citing papers by J.F. Verwey

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.F. Verwey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.F. Verwey. The network helps show where J.F. Verwey may publish in the future.

Co-authorship network of co-authors of J.F. Verwey

This figure shows the co-authorship network connecting the top 25 collaborators of J.F. Verwey. A scholar is included among the top collaborators of J.F. Verwey based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.F. Verwey. J.F. Verwey is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Schmitz, Jurriaan, et al.. (1992). Heat transport in cold-wall single-wafer low pressure chemical-vapor-deposition reactors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 10(5). 3193–3202. 7 indexed citations

Schropp, R.E.I. & J.F. Verwey. (1987). Instability mechanism in hydrogenated amorphous silicon thin-film transistors. Applied Physics Letters. 50(4). 185–187. 38 indexed citations

Schropp, R.E.I. & J.F. Verwey. (1987). Undoped Amorphous Silicon TFTs with n-Channel OR p-Channel Device Operation for the Determination of the Gap States Distribution.. MRS Proceedings. 95. 4 indexed citations

Hosson, J. Th. M. De, et al.. (1987). Enhanced electron-beam-induced current contrast of grain boundaries in silicon-on-insulator films. Journal of Applied Physics. 61(12). 5475–5477. 1 indexed citations

Hosson, J. Th. M. De, et al.. (1986). Effects of fluorine implantation on the kinetics of dry oxidation of silicon. Journal of Applied Physics. 60(3). 985–990. 10 indexed citations

Schropp, R.E.I., J. Snijder, & J.F. Verwey. (1986). Capacitance-Voltage Characteristics of Metallic Gate/Oxide/a-Si:H Mos Structures. MRS Proceedings. 70. 3 indexed citations

Verwey, J.F., et al.. (1985). Deep trapping of implanted Na+ and Li+ ions near the Si/SiO2 interface in metal-oxide-silicon structures. Solid-State Electronics. 28(5). 509–516. 5 indexed citations

Cuppens, R., et al.. (1984). An EEPROM for microprocessors and custom logic. 268–269. 9 indexed citations

Bakker, Sjoerd, et al.. (1984). Influence of anneal temperature on the mobile ion concentration in MOS structures. Solid-State Electronics. 27(1). 77–81. 5 indexed citations

10.

Verwey, J.F., et al.. (1983). Donor generation in monocrystalline silicon by halogen implantation. Solid-State Electronics. 26(3). 241–246. 20 indexed citations

11.

Verwey, J.F., et al.. (1977). Drift of the breakdown voltage in p-n junctions in silicon (walk-out). Solid-State Electronics. 20(8). 689–695. 17 indexed citations

12.

Verwey, J.F. & A. Heringa. (1977). Avalanche injection and near avalanche injection of charge carriers into SiO₂. IEEE Transactions on Electron Devices. 24(5). 519–523. 6 indexed citations

13.

Verwey, J.F., et al.. (1975). Mean free path of hot electrons at the surface of boron-doped silicon. Journal of Applied Physics. 46(6). 2612–2619. 30 indexed citations

14.

Verwey, J.F., et al.. (1974). Avalanche-injected electron currents in SiO2 at high injection densities. Solid-State Electronics. 17(9). 963–971. 17 indexed citations

15.

Verwey, J.F., et al.. (1973). Drift of the breakdown voltage in highly doped planar junctions. Microelectronics Reliability. 12(1). 51–56. 3 indexed citations

16.

Verwey, J.F., et al.. (1972). Emitter avalanche currents in gated transistors. IEEE Transactions on Electron Devices. 19(2). 245–250. 14 indexed citations

17.

Verwey, J.F.. (1972). Avalanche-injected hole current in SiO2. Applied Physics Letters. 21(9). 417–419. 9 indexed citations

18.

Verwey, J.F.. (1971). On the emitter degradation by avalanche breakdown in planar transistors. Solid-State Electronics. 14(9). 775–782. 14 indexed citations

19.

Verwey, J.F.. (1970). Time and intensity dependence of the photolysis of lead halides. Journal of Physics and Chemistry of Solids. 31(1). 163–168. 77 indexed citations

20.

Verwey, J.F., et al.. (1969). Photoconductivity in lead chloride and lead bromide. Physica. 42(2). 293–302. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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